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    ATC100A101JT150XT

    Abstract: atc100a100jt150xt ATC100A101 A114 A115 AN1955 C101 JESD22 MRFG35020A MRFG35020AR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1 ATC100A101JT150XT atc100a100jt150xt ATC100A101 A114 A115 AN1955 C101 JESD22 MRFG35020A MRFG35020AR1

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 0, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 NIPPON CAPACITORS

    AN1955

    Abstract: GRM55DR61H106KA88B kemet c chip data sheet Resistor mttf 465B A114 A115 JESD22 MRF6S24140H MRF6S24140HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 2, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz.


    Original     		PDF MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 AN1955 GRM55DR61H106KA88B kemet c chip data sheet Resistor mttf 465B A114 A115 JESD22 MRF6S24140H

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz.


    Original     		PDF MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 465B A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HSR3

    GRM55DR61H106KA88B

    Abstract: C1825C103J1RAC NIPPON CAPACITORS 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6P24190HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 GRM55DR61H106KA88B C1825C103J1RAC NIPPON CAPACITORS 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6P24190HR6

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 GRM55DR61H106KA88B C1825C103J1RAC
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz. Device


    Original     		PDF MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 465B A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HSR3 GRM55DR61H106KA88B C1825C103J1RAC

    2508051107Y0

    Abstract: NIPPON CAPACITORS AN1955 GRM55DR61H106KA88B NACZF331M63V MRF6P24190HR6 A114 A115 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 2508051107Y0 NIPPON CAPACITORS AN1955 GRM55DR61H106KA88B NACZF331M63V MRF6P24190HR6 A114 A115 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 LIFETIME BUY Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020AR1 MRFG35020A

    GRM55DR61H106KA88B

    Abstract: AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1 GRM55DR61H106KA88B AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT

    2508051107Y0

    Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 2508051107Y0 NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B

    GRM55DR61H106KA88B

    Abstract: AN1955 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 3, 3/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large- signal output applications at 2450 MHz.


    Original     		PDF MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 GRM55DR61H106KA88B AN1955 MRF6S24140H MRF6S24140HSR3

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22

    Chemi-Con DATE CODES

    Abstract: transistor c 5287 MRF5S9150HS T491C105K0 ATC100B220JT500XT NIPPON CAPACITORS AN1955 ATC100B470JT500XT GX-0300-55-22 JESD22-A114
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H-1 Rev. 2, 12/2009 RF Power Field Effect Transistor MRF5S9150HR3 Designed for N-CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		PDF MRF5S9150H-1 MRF5S9150HR3 IS-95 Chemi-Con DATE CODES transistor c 5287 MRF5S9150HS T491C105K0 ATC100B220JT500XT NIPPON CAPACITORS AN1955 ATC100B470JT500XT GX-0300-55-22 JESD22-A114

    A114

    Abstract: A115 C101 JESD22 MD7P19130H MD7P19130HR3 MD7P19130HSR3 capacitor mttf
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 0, 5/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		PDF MD7P19130H MD7P19130HR3 MD7P19130HSR3 A114 A115 C101 JESD22 MD7P19130H MD7P19130HSR3 capacitor mttf

    A114

    Abstract: A115 C101 JESD22 MD7P19130H MD7P19130HR3 MD7P19130HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		PDF MD7P19130H MD7P19130HR3 MD7P19130HSR3 A114 A115 C101 JESD22 MD7P19130H MD7P19130HSR3

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS

    capacitor mttf

    Abstract: T491C105K0 AN1955 MD7P19130H MD7P19130HR3 MD7P19130HSR3 GRM55DR61H106KA88B
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		PDF MD7P19130H MD7P19130HR3 MD7P19130HSR3 capacitor mttf T491C105K0 AN1955 MD7P19130H MD7P19130HSR3 GRM55DR61H106KA88B

    NIPPON CAPACITORS

    Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H - 2 Rev. 3, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		PDF MRF5S9150H MRF5S9150HSR3 150icers, MRF5S9150H-2 NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi

    6 017 03 61

    Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1 6 017 03 61 A113 MRFG35010ANT1 Z16C20

    ATC100A101

    Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1 ATC100A101 murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101

    atc 17-33

    Abstract: MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 atc 17-33 MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22

    2312 footprint dimension

    Abstract: A113 AN1955 MRFG35002N6T1 GT1040
    Text: Document Number: MRFG35002N6 Rev. 1, 5/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 2312 footprint dimension A113 AN1955 MRFG35002N6T1 GT1040

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 456 mhz Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 A114 A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HSR3 456 mhz Nippon capacitors

    NIPPON CAPACITORS

    Abstract: 2 w rf 150-200 mhz 2508051107Y0 MRF6P23190HR6 A114 A115 AN1955 C101 JESD22 j3001
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6 NIPPON CAPACITORS 2 w rf 150-200 mhz 2508051107Y0 MRF6P23190HR6 A114 A115 AN1955 C101 JESD22 j3001