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    NIC Components Corp NACZF331M63V18X17TR13T2F

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    Quest Components NACZF331M63V18X17TR13T2F 1,100
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    NACZF331M63V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NACZF101M63V12.5X17TR13T2F

    Abstract: NACZF221M100V18X17TR13T2F naczf221m50v12.5x17tr13t2f NACZF682M10V18X22
    Text: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800µF • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz


    Original     		PDF 100KHz 105OC) 120Hz 15mm/- NACZF101M63V12.5X17TR13T2F NACZF221M100V18X17TR13T2F naczf221m50v12.5x17tr13t2f NACZF682M10V18X22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz


    Original     		PDF 6800F) 100KHz 105OC) 1000F 2200F 120Hz 3300F 4700F 6800F 15mm/-

    nippon capacitors

    Abstract: MRF6S23140H j727
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors j727

    2508051107Y0

    Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 2508051107Y0 NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B

    NACZF471M63V18X22TR13

    Abstract: No abstract text available
    Text: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz


    Original     		PDF 100KHz 105OC) 380mm NACZF471M63V18X22TR13

    GRM55DR61H106KA88B

    Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6 GRM55DR61H106KA88B 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001

    J673

    Abstract: J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 J673 J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HSR3

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion


    Original     		PDF MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS

    nippon capacitors

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors

    capacitor 1825

    Abstract: Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz


    Original     		PDF 6800F) 100KHz 105OC) 1000F 2200F 3300F 120Hz 4700F 6800F 15mm/-

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz


    Original     		PDF 100KHz 105OC) 120Hz 15mm/-

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz


    Original     		PDF 100KHz 105OC) AEC-Q200* 15mm/-

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6

    5x17

    Abstract: 17WT TS-16949
    Text: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz


    Original     		PDF 6800F) 100KHz 105OC) 1000F 2200F 3300F 120Hz 380mm 5x17 17WT TS-16949

    K 2645 schematic circuit

    Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz


    Original     		PDF 6800F) 100KHz 105OC) 1000F 2200F 3300F 120Hz 4700F 6800F 15mm/-

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 456 mhz Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 A114 A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HSR3 456 mhz Nippon capacitors

    2508051107Y0

    Abstract: NIPPON CAPACITORS AN1955 GRM55DR61H106KA88B NACZF331M63V MRF6P24190HR6 A114 A115 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 2508051107Y0 NIPPON CAPACITORS AN1955 GRM55DR61H106KA88B NACZF331M63V MRF6P24190HR6 A114 A115 C101 JESD22

    NIPPON CAPACITORS

    Abstract: 2 w rf 150-200 mhz 2508051107Y0 MRF6P23190HR6 A114 A115 AN1955 C101 JESD22 j3001
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6 NIPPON CAPACITORS 2 w rf 150-200 mhz 2508051107Y0 MRF6P23190HR6 A114 A115 AN1955 C101 JESD22 j3001

    A114

    Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 A114 A115 AN1955 JESD22 MRF6S27085H MRF6S27085HSR3 Nippon capacitors

    Z25 transistor

    Abstract: Z27 transistor
    Text: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.


    Original     		PDF MHT1001H MHT1001HR5 Z25 transistor Z27 transistor