Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
|
Original
|
PDF
|
MD7P19130H
MD7P19130HR3
MD7P19130HSR3
|
capacitor mttf
Abstract: T491C105K0 AN1955 MD7P19130H MD7P19130HR3 MD7P19130HSR3 GRM55DR61H106KA88B
Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
|
Original
|
PDF
|
MD7P19130H
MD7P19130HR3
MD7P19130HSR3
capacitor mttf
T491C105K0
AN1955
MD7P19130H
MD7P19130HSR3
GRM55DR61H106KA88B
|
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
|
Original
|
PDF
|
|
MRF8P9040N
Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial
|
Original
|
PDF
|
|
A114
Abstract: A115 C101 JESD22 MD7P19130H MD7P19130HR3 MD7P19130HSR3
Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
|
Original
|
PDF
|
MD7P19130H
MD7P19130HR3
MD7P19130HSR3
A114
A115
C101
JESD22
MD7P19130H
MD7P19130HSR3
|
A114
Abstract: A115 C101 JESD22 MD7P19130H MD7P19130HR3 MD7P19130HSR3 capacitor mttf
Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 0, 5/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
|
Original
|
PDF
|
MD7P19130H
MD7P19130HR3
MD7P19130HSR3
A114
A115
C101
JESD22
MD7P19130H
MD7P19130HSR3
capacitor mttf
|