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    Microchip Technology Inc DSPIC33EP512GP806-I-PT

    IC MCU 16BIT 512KB FLASH 64TQFP
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    DigiKey DSPIC33EP512GP806-I-PT Tray 3,634 1
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    Microchip Technology Inc DSPIC33FJ128GP804-E-PT

    IC MCU 16BIT 128KB FLASH 44TQFP
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    DigiKey DSPIC33FJ128GP804-E-PT Tray 3,011 1
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    Microchip Technology Inc DSPIC33FJ64GP802-E-MM

    IC MCU 16BIT 64KB FLASH 28QFN
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    DigiKey DSPIC33FJ64GP802-E-MM Tube 2,050 1
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    Microchip Technology Inc DSPIC33FJ128GP802-E-MM

    IC MCU 16BIT 128KB FLASH 28QFN
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    DigiKey DSPIC33FJ128GP802-E-MM Tube 1,826 1
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    Microchip Technology Inc DSPIC33FJ128GP804-I-ML

    IC MCU 16BIT 128KB FLASH 44QFN
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    DigiKey DSPIC33FJ128GP804-I-ML Tube 1,791 1
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    Find more GP80 price and stock on Findchips.com

    GP80 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GP80 Unknown Cross Reference Datasheet Scan PDF
    GP80-005 Frontier Electronics 8A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GP80-005R Fronter Electronics DIODE SWITCHING DIODE 50V 8A 2P6 Original PDF
    GP80-01 Frontier Electronics 8A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GP80-01R Fronter Electronics DIODE SWITCHING DIODE 100V 8A 2P6 Original PDF
    GP80-02 Frontier Electronics 8A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GP80-02R Fronter Electronics DIODE SWITCHING DIODE 200V 8A 2P6 Original PDF
    GP80-04 Frontier Electronics 8A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GP80-04R Fronter Electronics DIODE SWITCHING DIODE 400V 8A 2P6 Original PDF
    GP80-06 Frontier Electronics 8A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GP80-06R Fronter Electronics DIODE SWITCHING DIODE 600V 8A 2P6 Original PDF
    GP80-08 Frontier Electronics 8A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GP80-08R Fronter Electronics DIODE SWITCHING DIODE 800V 8A 2P6 Original PDF
    GP800DCM18 Dynex Hi-Reliability Chopper Switch IGBT Module Original PDF
    GP800DCS18 Dynex Chopper Switch IGBT Module Original PDF
    GP800DDM12 Dynex Hi-Reliability Dual Switch IGBT Module Original PDF
    GP800DDM18 Dynex Hi-Reliability Dual Switch IGBT Module Original PDF
    GP800DDS12 Dynex Powerline N-Channel Dual Switch IGBT Module Original PDF
    GP800DDS18 Dynex Dual Switch IGBT Module Original PDF
    GP800FSM18 Dynex Hi-Reliability Single Switch IGBT Module Original PDF

    GP80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet `Type Model No.: GP80AAAHC : Rechargeable Nickel Metal Hydride Cylindrical Cell Φ = 10.5 mm H = 44.5 mm Fast Charge charge control required Voltage (V) 1.6 Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 80 to 2400 mA


    Original     		GP80AAAHC 800mA 2400mA 1600mA TRS0253 PDF

    GP80BVH

    Abstract: GP80B
    Text: Data Sheet Model No.: GP80BVH Type : Rechargeable Nickel Metal Hydride Button Cell Nominal Dimension : Applications Charge Characteristics Voltage V 1.6 Φ = 15.5mm H = 6.0mm : Recommended discharge current 0.8 to 40mA 1.4 Nominal Voltage : 1.2V Capacity


    Original     		GP80BVH 80mAh 90mAh 16hrs 20oCaracteristics RRS0083 GP80BVH GP80B PDF

    GP800

    Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
    Text: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		GP800DCS18 DS5221-4 DS5221-5 GP800 AN4508 AN4502 AN4503 AN4505 GP800DCS18 dc chopper circuit application PDF

    GP801DCM18

    Abstract: AN4502 AN4503 AN4505 AN4506
    Text: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		GP801DCM18 DS5365-3 GP801DCM18 AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DCM18
    Text: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		GP800DCM18 DS5363-3 GP800DCM18 an1800V, AN4502 AN4503 AN4505 AN4506 PDF

    gp80

    Abstract: GP80-10 GP80-005 GP80-01 GP80-02 GP80-04 GP80-06 GP80-08
    Text: GP80-005 THRU GP80-10 FRONTIER ELECTRONICS CO., LTD. 8A GENERAL PURPOSE PLASTIC RECTIFIER FEATURES ! HIGH CURRENT LEAD MOUNTED ! DIFFUSED JUNCTION ! HIGH SURGE CAPABILITY ! LOW FORWARD VOLTAGE DROP ! COMPLETELY INSULATED CASE ! UNIFORM MOLDED BODY ! THE PLASTIC MATERIAL CARRIES U/L RECOGNITION 94V-0


    Original     		GP80-005 GP80-10 GUARANTEED250/10S MIL-STD-202, 300us gp80 GP80-10 GP80-005 GP80-01 GP80-02 GP80-04 GP80-06 GP80-08 PDF

    DS493

    Abstract: DS4933
    Text: M ITEL S E M IC O N D U C T O R GP800DHB18S Powerline N-Channel IGBT Module Advance Inform ation DS4933 - 2.8 February 1999 Supesedes August 1998, version DS4933-2.0 T he G P 800D H B 18S is a dual sw itch 1800V, robust n c h a n n e l e n h a n c e m e n t m o d e in s u la te d g a te b ip o la r


    OCR Scan     		DS4933-2 GP800DHB18S DS4933 1600g DS493 PDF

    AN4502

    Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
    Text: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001


    Original     		GP800NSS33 DS5358-2 GP800NSS33 AN4502 AN4503 AN4505 AN4506 an5167 440nF DS-5358 PDF

    PLESSEY CLA

    Abstract: No abstract text available
    Text: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.


    OCR Scan     		DS4338-4 GP800DHB12S 190ns 840ns 44lbs 70lbs 88lbs 18lbs 1500g PLESSEY CLA PDF

    AN4505

    Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
    Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		GP800DDM18 DS5364-2 DS5364-3 3300y AN4505 GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram PDF

    AN4502

    Abstract: AN4503 AN4505 GP800FSS18
    Text: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		GP800FSS18 DS5261-2 DS5261-3 AN4502 AN4503 AN4505 GP800FSS18 PDF

    DS5402-1

    Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
    Text: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		GP800FSM18 DS5402-1 GP800FSM18 AN4502 AN4503 AN4505 AN4506 PDF

    DS5401-1

    Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
    Text: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		GP801FSM18 DS5401-1 GP801FSM18 basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 DS5401 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
    Text: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		GP800DDM12 DS5291-1 DS5291-2 AN4502 AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v PDF

    AN450

    Abstract: AN4502 AN4503 AN4505 GP800FSS12
    Text: GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar


    Original     		GP800FSS12 DS5239-2 DS5239-3 GP800FSS12 AN450 AN4502 AN4503 AN4505 PDF

    GP80AAAHC

    Abstract: No abstract text available
    Text: Data Sheet `Type Model No.: GP80AAAHC Fast Charge charge control required : Rechargeable Nickel Metal Hydride Cylindrical Cell Voltage (V) 1.6 Φ = 10.5 mm H = 44.5 mm Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 80 to 2400mA


    Original     		GP80AAAHC 2400mA 780mAh 800mAh 800mA 400mA 400mA 1600mA GP80AAAHC PDF

    ge traction motor

    Abstract: DS493
    Text: @M ITEL GP800DHB12T Powerline N-Channel IGBT Module SEMICONDUCTOR A dvance Inform ation Supesedes August 1998, version DS4931-2.0 DS4931-3.5 February 1999 The GP800DHB12T is a dual switch 1200V, robust n channel enhan cem e nt m ode Insulated gate bipolar


    OCR Scan     		DS4931-2 GP800DHB12T DS4931-3 GP800DHB12T ge traction motor DS493 PDF

    dc servo motor control

    Abstract: DS4338
    Text: GP800DHB12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4338 - 4.2 DS4338 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V 'c E sa„ 2.8V 'c c o n t 800A 'c ,P K , 1600A tr 190ns t. 840ns APPLICATIONS


    OCR Scan     		GP800DHB12S DS4338 190ns 840ns dc servo motor control PDF

    GP801DDS18

    Abstract: AN4502 AN4503 AN4505 DS235-3
    Text: GP801DDS18 GP801DDS18 Dual Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS235-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 800A Per Arm APPLICATIONS


    Original     		GP801DDS18 DS235-3 DS5235-4 GP801DDS18 AN4502 AN4503 AN4505 PDF

    723 ic internal diagram

    Abstract: AN4502 AN4503 AN4505 GP800DDS18
    Text: GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Arm


    Original     		GP800DDS18 DS5165-4 DS5165-5 723 ic internal diagram AN4502 AN4503 AN4505 GP800DDS18 PDF

    AN4502

    Abstract: AN4503 AN4505 GP800DDS12 basic single phase ac motor reverse forward circuit diagram
    Text: GP800DDS12 GP800DDS12 Powerline N-Channel Dual Switch IGBT Module Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000 The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		GP800DDS12 DS5172-3 DS5172-4 GP800DDS12 AN4502 AN4503 AN4505 basic single phase ac motor reverse forward circuit diagram PDF

    DS51721

    Abstract: bipolar transistor td tr ts tf
    Text: GP800DDS12-ABC GP800DDS12-ABC Powerline N-Channel IGBT Module DS5172-1.2 May 1999 The GP800DDS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage


    Original     		GP800DDS12-ABC DS5172-1 GP800DDS12-ABC DS51721 bipolar transistor td tr ts tf PDF

    bipolar transistor td tr ts tf

    Abstract: No abstract text available
    Text: GP800DDS18-AAB GP800DDS18-AAB Powerline N-Channel IGBT Module Advance Information DS5165-1.0 May 1999 The GP800DDS18-AAB is a dual switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		GP800DDS18-AAB DS5165-1 GP800DDS18-AAB bipolar transistor td tr ts tf PDF

    80AAKC

    Abstract: GP80AAKC
    Text: Data Sheet Model No.: GP80AAKC Type : Rechargeable Nickel Cadmium Cylindrical Cell Fast Charge Charge control required Voltage (V) 1.7 Nominal Dimension (with Sleeve) : Φ =14.5mm H =50.5mm 1.6 Applications : Recommended discharge current 40 to 2400mA 1.4


    Original     		GP80AAKC 2400mA 800mAh 850mAh 160mA 400mA 800mA 400mA 80AAKC GP80AAKC PDF