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    GH MOSFET Search Results

    GH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    GH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD-97440B GH-SERIES HIGH RELIABILITY, HIGH EFFICIENCY RADIATION HARDENED DC-DC CONVERTER 28V Input, Single Output Description The GH series is a family of low voltage single output DC-DC converters. They are specifically designed in response to the need for low voltage at moderate current


    Original     		PDF PD-97440B 2520Junction

    Untitled

    Abstract: No abstract text available
    Text: PD-97440B GH-SERIES HIGH RELIABILITY, HIGH EFFICIENCY RADIATION HARDENED DC-DC CONVERTER 28V Input, Single Output Description The GH series is a family of low voltage single output DC-DC converters. They are specifically designed in response to the need for low voltage at moderate current


    Original     		PDF PD-97440B 2520Junction

    GH2803R3S

    Abstract: MIL-PRF-883 5962-1021701KXX
    Text: PD-97440C GH-SERIES HIGH RELIABILITY, HIGH EFFICIENCY RADIATION HARDENED DC-DC CONVERTER 28V Input, Single Output Description The GH series is a family of low voltage single output DC-DC converters. They are specifically designed in response to the need for low voltage at moderate current


    Original     		PDF PD-97440C GH2803R3S MIL-PRF-883 5962-1021701KXX

    a101 transistor

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD L1136 Preliminary CMOS IC H I GH RI PPLE-REJ ECT I ON LOW DROPOU T H I GH OU T PU T CU RREN T CM OS V OLT AGE REGU LAT OR ̈ DESCRI PT I ON The UTC L1136 is an extremely low dropout regulator providing designers with low current dissipation, high output voltage accuracy


    Original     		PDF L1136 L1136 QW-R502-464 a101 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS1702 Preliminary LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH  DESCRI PT I ON The UTC UPS1702 is an integrated PWM controller and Power MOSFET specifically designed for current mode operation


    Original     		PDF UPS1702 UPS1702 QW-R911-020

    PSBM 24

    Abstract: PSBM24 PSbm24-05
    Text: ECO-PACTM 2 PSBM 24/05 Power MOSFET Stage ID25 VDSS RDS on for Boost Converters Module for Power Factor Correction K Preliminary Data Sheet GH CM L = 35 A = 500 V = 0.12 Ω VX VRSM VRRM Type (V) (V) 600 500 PSBM 24/05 1 MOSFET Symbol Test Conditions VDSS


    Original     		PDF

    PE4210

    Abstract: No abstract text available
    Text: Advance Information PE4210 SPDT Low Insertion Loss MOSFET RF Switch Features • Single 3.0 V Power Supply • Low Insertion loss: . 39dB at 1 GHz, .42dB at 2 GHz • High isolation of 32 dB at 1 GHz, 26 dB at 2 GH • Typical1 dB compression = +10dBm • CMOS logic control


    Original     		PDF PE4210 10dBm PE4210 50MHz

    RF1S4N100SM

    Abstract: RFP4N100 TB334
    Text: RFP4N100, RF1S4N100SM Data Sheet Title FP4 00, P4 00S bt 3A, 00V, 00 m, gh lte, Cha el wer OST utho eyrds ter- August 1999 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Features The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM -55oC 150oC RF1S4N100SM TB334

    Untitled

    Abstract: No abstract text available
    Text: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2


    Original     		PDF SP6120B SP6120B 16-Pin SP6120BEY/TR SP6120BEY-L/TR

    4TPB470M

    Abstract: 6TPB330M FDS6375 FDS6690A MBR0530 SP6120B STPS2L25U
    Text: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2


    Original     		PDF SP6120B 16-Pin SP6120BEY/TR SP6120BEY-L/TR SP6120B 4TPB470M 6TPB330M FDS6375 FDS6690A MBR0530 STPS2L25U

    SP6120B

    Abstract: No abstract text available
    Text: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2


    Original     		PDF SP6120B SP6120B 16-Pin SP6120BEY/TR SP6120BEY-L/TR

    "Schottky Diode"

    Abstract: No abstract text available
    Text: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2


    Original     		PDF SP6120B SP6120B 16-Pin SP6120BEY/TR SP6120BEY-L/TR "Schottky Diode"

    FDS6375

    Abstract: 4TPB470M 6TPB330M FDS6690A MBR0530 SP6120B STPS2L25U
    Text: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2


    Original     		PDF SP6120B 16-Pin SP6120BEY-L/TR SP6120B FDS6375 4TPB470M 6TPB330M FDS6690A MBR0530 STPS2L25U

    4TPB470M

    Abstract: 6TPB330M FDS6375 FDS6690A MBR0530 SP6120 STPS2L25U
    Text: SP6120 Low Voltage, AnyFETTM, Synchronous,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters FEATURES N/C 1 16 BST • Optimized for Single Supply, 3V - 5.5V Applications 15 GH ENABLE 2 ■ High Efficiency: Greater Than 95% Possible


    Original     		PDF SP6120 16-Pin SP6120EY/TR SP6120EY-L/TR SP6120 4TPB470M 6TPB330M FDS6375 FDS6690A MBR0530 STPS2L25U

    A3946

    Abstract: A3946KLB A3946KLP SOIC-16 TSSOP-16
    Text: Data Sheet 29319.150f 3946 Preliminary Data Sheet Subject to Change Without Notice February 2, 2004 Half-Bridge Power MOSFET Controller A3946KLB SOIC Scale 1:1 VREG 1 16 VBB CP2 2 15 VREF CP1 3 14 DT GND 4 13 GND GL 5 12 RESET S 6 11 GH 7 10 IN1 BOOT 8 9 IN2


    Original     		PDF A3946KLB A3946KLP A3946 16-lead SOIC-16 TSSOP-16

    a2198

    Abstract: 2SK1388 A2-198
    Text: 2SK1388 FUJI POWER M O S-FET N-C HANNEL SILICON POWER MOS-FET F-III SERIES •Outline Drawings ■ leatures • H gh current • Low on-resistance • N d secondary breakdown • Low driving power • H gh forward Transconductance ■Applications • Motor controllers


    OCR Scan     		PDF 2SK1388 a2198 2SK1388 A2-198

    a2198

    Abstract: 2SK1388 A2-198 a2200 1r1h A2199
    Text: 2SK1388 FUJI POWER M O S -FE T N-C H ANNEL SILICON POWER MOS-FET F-III SERIES lOutline Drawings •features 1H gh current 1Low on-resistance ' N d secondary breakdown J •Low driving power 1H gh forward Transconductance c b® ■Applications 12 0.8*“


    OCR Scan     		PDF 2SK1388 SC-46 Tc-25Â bdtb30 a2198 2SK1388 A2-198 a2200 1r1h A2199

    LTUG

    Abstract: No abstract text available
    Text: 2SK2021-01 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features Outline Drawings • H gh speed switching • Low on-resistance • No secondary breakdown • Low. driving power • H gh voltage • V, s= +30V Guarantee • Avalanche-proof


    OCR Scan     		PDF 2SK2021-01 5388-76B1 LTUG

    Untitled

    Abstract: No abstract text available
    Text: 2SK2254-01L. S FUJI POWER M O S-FET IM-CHANNEL SILICON POWER MOS-FET _ _ Ä - F A P - I I A S E R I E S • Features • Hi gh speed switching • Lbiiv on-resistance • Nc secondary breakdown • Low driving power • Hi gh voltage


    OCR Scan     		PDF 2SK2254-01L. 20Kf2)

    2SK2004-01

    Abstract: 2SK2004-01L T151
    Text: 2SK2004-01 L. S FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIASERIES • features Outline Drawings • H gh speed switching • Low on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V ;s= + 30 V Guarantee


    OCR Scan     		PDF 2SK2004-01L. Tc-25Â 2SK2004-01 2SK2004-01L T151

    Diode GFT

    Abstract: No abstract text available
    Text: 2SK2257-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F A • Features P - I I A S E R I E S Outline Drawings • H gh speed switching • Low on-resistance • N secondary breakdown • Le w driving power • H gh voltage • V,5 = + 30V Guarantee


    OCR Scan     		PDF 2SK2257-01 20Kii) Diode GFT

    Untitled

    Abstract: No abstract text available
    Text: 2SK2004-01L, S F U J I P O W E R M O S -F E T N-C HANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features IOutline Drawings • H gh speed switching • Lnw on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V-s= ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK2004-01L, IZ3TS30

    Untitled

    Abstract: No abstract text available
    Text: 2SK2029-01 L, S FUJI POWER MOS-FET _ _ _ _ N-CHANNEL SILICON POWER MOS-FET -F A P - I I A S E R I E S O utline D raw ings • Features • Hi gh sp ee d s w itc h in g


    OCR Scan     		PDF 2SK2029-01

    2SK1278

    Abstract: SC-65
    Text: 2SK1278 FUJI POWER MOS-FET N-OHANNEL ENHANCEMENT TYPE MOS-FET F-V SERIES • features lOutline Drawings • lr elude fast recovery diode • H gh voltage • Low driving power ■Applications • IV otor controlers • Irverters • Cioppors ¡Equivalent Circuit Schematic


    OCR Scan     		PDF 2SK1278 SC-65 2SK1278 SC-65