MPS2712C
Abstract: MPS2714C MPS2716C THC6222 THC6224 THC6426 THC6427 THC6428 THC6429 THC6714
Text: ALLEGRO 8514019 MICROSYSTEMS SPRAGUE. INC T3 0SG433Ô D SEMIC ONDS/ ICS 93D GGG35b4 3 • AL6R 0 3 5643> BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain •cBO 100 100 500 500 100 100
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0S0M33Ã
0003SbM
THC6222
THC6224
THC6426
THC6427
MPS3393C
MPS3394C
MPS3395C
MPS3396C
MPS2712C
MPS2714C
MPS2716C
THC6428
THC6429
THC6714
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3SK97
Abstract: 5LC3
Text: m ûSnafl? GGG35bO 374 • Super Fast Recovery Diode Tentativeness Specification 1.Absolute Maximum Ratings Symbol Item Conditions Ratings Storage temperature Tstg Operating junction temperature Tj Maximum reverse voltage V Average rectified forward current
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GGG35bO
5LC30
DF5LC30
3SK-970008
3SK97
5LC3
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X28C16
Abstract: No abstract text available
Text: XICOR INC SEE T> m ^ 4 1 7 4 3 GGG3534 315 « X I C im Advance Information 16K X28C 16 2K x 8 Bit 5 Volt, Byte Alterable E2PROM T - 4 o - I 3 - Z 7 FEATURES DESCRIPTION 150 ns Access Time SIMPLE Byte and Page Write —Single 5 Volt Supply — No External High Voltages or Vpp Control
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GGG3534
64-Byte
X28C16
X28C16
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hym536810
Abstract: HYM53
Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.
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HYM536810
36-blt
36-bit
HY5117400
HY514100A
22fiF
HYM53681OM/LM/TM/LTM
HYM53681OMG/LMG/TMG/LTMG
HYM53681OT/LT
HYM53
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Untitled
Abstract: No abstract text available
Text: □IXYS MD0 500 High Power Diode Module V RRM FRMS FAVM =1200-2200 V = 880 A = 560 A Preliminary Data V RRM V RSM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol Test Conditions ^FRMS ^FAVM "^"vj ^FSM TVJ= 45°C VR= 0 l2t Type 3 o MDO
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500-12N1
500-14N1
500-16N1
500-18N1
500-20N1
500-22N1
GGG350Ã
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Untitled
Abstract: No abstract text available
Text: EL2005/EL2005C F eatu res G eneral D escrip tion • Low input current—50 pA • Low offset and drift— 2 mV/25 ju,V/°C • H igh slew rate—1500 V /fx s • Fast rise and fall time—2.5 ns • High input resistance—1000 G il • Bandwidth— 140 MHz
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EL2005/EL2005C
ELH00
MIL-STD-883
EL2005
ELH0033
EL2004
100mA
170nS
312R557
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Untitled
Abstract: No abstract text available
Text: V T C INC 51E D IT # • DDG325*1 2Ô7 W V T C VM 7000 -T-Sz^« 5-VOLT FERRITE/MIG HEAD READ/WRITE PREAMPLIFIER J uly, 1991 D ESCRIPTIO N The VM7000 is a high-performance, very low power read/ write preamplifier designed for use with center-tapped ferrite
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DDG325
85nV/VHz
VM7000
T-52-38
100mV,
10MHz
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MSH8
Abstract: No abstract text available
Text: S E D A T E M SH-840 L Quad, Simultaneous Sample-Hold with Multiplexer IN N O V A T IO N a n d E X C E L L E N C E FEATURES • 4 Simultaneous sample-hold amplifiers • Internal 4-channel multiplexer • 775ns acquisition time 10V step to ±0.01% including multiplexer
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SH-840
775ns
100MQ
32-pin,
MSH-840
-840M
-55to
MIL-STD-883
MSH8
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CT230402
Abstract: BP107 CT23 CT230802
Text: POWEREX INC m m 15E D a • 72T4b21 0003533 5 ■ t —Í7? CT230402 CT230802 ta Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Split Dual SCR
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BP107,
Amperes/400-800
CT230402,
CT230802
MAX/10
CT230402
BP107
CT23
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GM71C4256-10
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY INC/ 34E D _ 19 MÜ2Û757 GQD3E1S T «GST PRODUCT SPECIFICATION GM71C4256 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM _ T -V 6 -2 3 -/7 Description Pin Configuration The GM71C4256 is the new generation dynamic RAM organized 262,144 x 4 Bit. The GM71C4256 utilizes
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GM71C4256
GM71C4256
402A7S7
T-90-20
GM71C4256-10
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Weitek W5186
Abstract: No abstract text available
Text: W5286 USER INTERFACE CONTROLLER October 1992 Chapter 1. Technical Overview 1.1. Features W INDOW S ACCELERATOR HARDWARE ACCELERATION Single-chip display controller with accelerated graphics functions Two-operand BitBlt engine Speeds up Windows applications by 2 to 4 times compared
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W5286
32x32
1280x1024
W5286,
160-pin
5286-80-P
Weitek W5186
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Untitled
Abstract: No abstract text available
Text: HYM540A410 M-Series •HYUNDAI 4M x 40-bit C M O S DRAM MODULE P R ELIM IN A R Y DESCRIPTION The HYM540A410 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5117400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted for
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HYM540A410
40-bit
HY5117400
22jiF
HYM540A41OM/LM/TM/LTM
HYM540A41OMG/LMG/TMG/LTMG
HYM540410TM/LTM
1CE09-11-MAR94
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Untitled
Abstract: No abstract text available
Text: SUPERTEX INC blE D • 07732*15 G ü ü 3 S n ^ S u p ertex inc. 71D « S T X HV16 8-Channel High Voltage Analog Switch Ordering Information_ Package Options +70V +80V * 28-lead Plastic Chip Carrier ^NN V SIG 24-pin Ceramic Side-brazed DIP*
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28-lead
24-pin
36-pin
24-pin
HV1614C
HV1614X
HV1614CS
HV1614P
HV1614PJ
HV1616C
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Untitled
Abstract: No abstract text available
Text: HIGH PtRFORMANCE ANALOG INTEGRATED CMCalTS ELHW3G/883 Fast Buffer A mplifie F eatu res G eneral D escrip tion • • • • • • T he ELH0033 is a high-spei : follower buffer designed to provide high dutp u t'çU rrén ijro n v D C to over 100 M H z. T he ELH0033 slews aisl500
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ELHW3G/883
ELH0033
aisl500
500V/ju
IL-STD-883
200mA
200nS
100mA
170nS
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