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    GERMANIUM RECTIFIER Search Results

    GERMANIUM RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CRG09A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CMG03A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG11B Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG10A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG09B Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM RECTIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AA137

    Abstract: "Point Contact Diode" Germanium Diode tfk Germanium diode IV germanium rectifier germanium rectifier diode point contact diode germanium point contact diode Germanium Diode aa137 uhf germanium diode
    Text: A A 137 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Regelspannungserzeugung in FS-Geräten Applications: AGC rectifier in TV receivers Abmessungen in mm Dimensions in mm 0 2 ,6 II- - - - - - - - - - - - - - - - - - - - 1 II 1 1 — — - 2 6 - —


    OCR Scan     		AA137 39MHz, AA137 "Point Contact Diode" Germanium Diode tfk Germanium diode IV germanium rectifier germanium rectifier diode point contact diode germanium point contact diode Germanium Diode aa137 uhf germanium diode PDF

    OA 191

    Abstract: germanium rectifier
    Text: O A 182 B Germanium-Kleinflächendioden-Quartett Germanium small junction diodes quad Anwendungen: Gleichrichter in Brückenschaltung Applications: Rectifier in bridge circuit Abmessungen in mm Dimensions in mm 00,5 c [i =4= r li 10 Kunststoffgehäuse Plastic case


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    GU1A100SB

    Abstract: GU1A100 germanium
    Text: □ GERMANIUM POWER DEVICES b3E D 3^47375 □DDOS'ìl 2T7 « G P D EXTREMELY LOW Vf GERMANIUM RECTIFIERS Io • MAXIMUM RATINGS VRM VRM rep (non-rep) Volts Volts IF M vr (RMS) Volts (surge) Amp FAMILY PKG Amp G500R2 D0200AB 500 20 24 14 12,000 G200R4 D0200AA


    OCR Scan     		G500R2 D0200AB G200R4 D0200AA G200R4SB GU1A100 G60R4 G30R4 GD60R4 GD30R4 GU1A100SB GU1A100 germanium PDF

    1N93

    Abstract: 1n91
    Text: 1N91 1N92 1N93 GERMANIUM RECTIFIERS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N91 series is a low-current germanium rectifier, mounted in an axial lead metal case, for applications requiring high efficiency and extremely low voltage drop.


    Original     		150mA 30-April 1N93 1n91 PDF

    backward diode

    Abstract: germanium rectifier diode "backward diode" diode germanium ha494 Q62701-E36 TU 300 a GERMANIUM detector diode TU 300
    Text: TU 300 Germanium backward diode TU 300 is a germanium backward diode with good RF characteristics and a particularly steep forward characteristic. TU 300 is used as rectifier, detector or mixer. TU 300 was designed to replace TU 1 B . Type TU 300 3? T~ O rd e r n u m b e r


    OCR Scan     		Q62701-E36 06tHicK backward diode germanium rectifier diode "backward diode" diode germanium ha494 Q62701-E36 TU 300 a GERMANIUM detector diode TU 300 PDF

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan     		1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode PDF

    1N93

    Abstract: 1N92 germanium rectifier 1N91 1N912 American Microsemiconductor
    Text: AMERICAN MICROSEHICONDUC T 071^775 0000011 H I*AMR 'V:0l-07 3=iE D AMERICAN MICROSEMICONDUCTOR INC. 145 M a in Str eet • M a d is o n , N ew Jersey 0 7 9 4 0 GERMANIUM • 2 0 1 3 7 7 -9 5 6 6 RECTIFIERS Germanium alloy junction rectifiers types 1N91, 1N92 and


    OCR Scan     		10St- 1N93 1N92 germanium rectifier 1N91 1N912 American Microsemiconductor PDF

    Germanium rectifier

    Abstract: 148B germanium
    Text: IE D E ^ j n f i n b B 0000BB7 E | “ 1989963 C E N T R A L S E M I C O N D U C T O R 92D 00337 D f'-'ô/-O T CEN295 GERMANIUM RECTIFIER AXIAL LEAD METAL CASE DIV. CENTRAL STATE INDUSTRIES, INC. DESCRIPTION The CENTRAL SEMICONDUCTOR CEN295 is a low current Germanium Rectifier for applications


    OCR Scan     		0000BB7 CEN295 JAN1N93A. 500mA 300Vac, Germanium rectifier 148B germanium PDF

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


    OCR Scan     		F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode PDF

    Germanium Power Devices

    Abstract: Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp
    Text: GERMANIUM POWER DEVICES b3E J> m 3*147375 □□DGS'ìS ^42 • G P ß ermanium Power Devices Corp. Ge Schottky Rectifier T03 pkg 60mii pin High Reverse Energy/Ultra-Low VF GD60S20 May 1993


    OCR Scan     		GD60S20 310mv 260mv 230mv 360mv 300mv 27500ma 350ma 300ma 2000pf Germanium Power Devices Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp PDF

    Germanium Power Diodes

    Abstract: T-75 A HIGH VOLTAGE DIODES Germanium power 490mV Germanium Power Devices G40S20 430mv germanium
    Text: G Germanium Power Devices Corporation * Ge Schottky Rectifier D05 High Reverse Energy/Ultra-Low Vp G40S20 PRELIMINARY SPECIFICATIONS MAXIMUM RATINGS: IF avg Average forward current rectangular waveform 40 A IFM Peak rectified forward current 50%duty cycle


    OCR Scan     		G40S20 300usec 400mv 340mv 310mv 450mv 390mv 360mv 490mv 430mv Germanium Power Diodes T-75 A HIGH VOLTAGE DIODES Germanium power Germanium Power Devices G40S20 germanium PDF

    cross reference zener diodes

    Abstract: germanium diodes
    Text: Table of Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers


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    cross reference zener diodes

    Abstract: power transistors cross reference GERMANIUM SMALL SIGNAL TRANSISTORS
    Text: Table off Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers


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    cross reference zener diodes

    Abstract: SCHOTTKY DIODES CROSS REFERENCE rf transistors cross reference
    Text: MCC TABLE OF CONTENTS I PART INDEX DIODES TRANSISTORS VOLTAGE REGULATORS II) III) 3 3 11 12 CASE STYLE REFERENCE GUIDE ELECTRICAL SPECIFICATIONS 13 30 DIODES 30 GERMANIUM DIODES 30 SUPERFAST RECOVERY RECTIFIERS 31 35 ULTRAFAST RECOVERY RECTIFIERS HIGH EFFICIENT RECTIFIERS .37


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    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


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    Germanium Power Diodes

    Abstract: germanium rectifier diode 1000 WATT smps G600R15 Germanium Power Devices germanium germanium diodes forward drop 12 v smps 5 amps 300 WATT smps Germanium Schottky diode
    Text: GERMANIUM POUER DEVICES b3E D • 3TM737S 00005'n 5TB ■ £PD w m Ulermanium Power Devices Corp. G 6 0 0 R 1 5 Ge High Current Fast Recovery Rectifier Ultra-Low Vp & Thermal Impedance MAXIMUM RATINGS: 600A IF avg Average forward current rectangular waveform


    OCR Scan     		G600R15 455mv 400mv Germanium Power Diodes germanium rectifier diode 1000 WATT smps G600R15 Germanium Power Devices germanium germanium diodes forward drop 12 v smps 5 amps 300 WATT smps Germanium Schottky diode PDF

    germanium power devices corporation

    Abstract: G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power
    Text: 3T47375 G0G0731 b=î4 l ü l Germanium Power Devices Corporation G -« *. High Reverse Énergy/Ultra-Low Vp G 15S 20 PRELIMINARY SPECIFICATIONS M k t,. ^ "*Ls°U J î 5 S ^ ! i _ | MAXIMUM RATINGS: IF avg


    OCR Scan     		3T47375 G0G0731 300psec 305mv 350mv 390mv 440mv 240mv 290mv germanium power devices corporation G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power PDF

    1N60P

    Abstract: 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35
    Text: 1N60, 1N60P GERMANIUM DIODES Features • Metal silicon junction, majority carrier conduction DO-35 GLASS · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics 0.075(1.9) MAX. DIA.


    Original     		1N60P DO-35 1N60P 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35 PDF

    cross reference zener diodes

    Abstract: No abstract text available
    Text: Table off Contents N Index / Cross Reference Page 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Transient Voltage Suppressors TVS 130 Current Limiting Diodes


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    1671B

    Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
    Text: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point


    OCR Scan     		2N1671 2N1671-2N1671A) 2N1671B) 314737S 1671B scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C PDF

    NTE109

    Abstract: germanium diode nte109 germanium rectifier diode Germanium Power Devices germanium diode Germanium Power Diodes Germanium diode data sheet Germanium rectifier diode germanium 78 DIODE
    Text: NTE109 Germanium Diode Fast Switching General Purpose Description: The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications.


    Original     		NTE109 NTE109 Vcont/10. germanium diode nte109 germanium rectifier diode Germanium Power Devices germanium diode Germanium Power Diodes Germanium diode data sheet Germanium rectifier diode germanium 78 DIODE PDF

    NTE109

    Abstract: germanium rectifier germanium rectifier diode "Germanium Diode"
    Text: NTE109 Germanium Diode Fast Switching General Purpose Description: The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications.


    Original     		NTE109 NTE109 Vcont/10. germanium rectifier germanium rectifier diode "Germanium Diode" PDF

    G60S15

    Abstract: G60S10 Germanium power
    Text: GERMANIUM POWER DEVICES 31E I • 3=147375 0000S48 S ■ E R M A N I U M PO W ER DEVICES CORP. Ge Schottky Rectifier High Reverse Energy/Ultra-Low Vp Preliminary Specifications DO-5 pkg Nov. ’90 Maximum Ratings: IF avg IFM IFSM VRWM T. JC IRRM Average Forward Current Rectangular W aveform . . 60 Amps


    OCR Scan     		0000S48 G60S15 G60S10 Germanium power PDF

    2N1671B

    Abstract: 2N1671 2N1671A 160 germanium transistor 2N1671-2N1671A 2N1671C Germanium Power Devices 029T UJ-01 2NI67
    Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR The| G PD • Unijunction T ran sistor is a three term inal device having a stable “N ” type negative resistance ch arac­ teristic over a wide tem perature range. A stable peak point voltage, a low peak point


    OCR Scan     		2N1671 2N1671A 2N1671-2N1671A) 2N1671B) 3CI47375 G000742 2N1671B 160 germanium transistor 2N1671-2N1671A 2N1671C Germanium Power Devices 029T UJ-01 2NI67 PDF