1N93
Abstract: 1n91
Text: 1N91 1N92 1N93 GERMANIUM RECTIFIERS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N91 series is a low-current germanium rectifier, mounted in an axial lead metal case, for applications requiring high efficiency and extremely low voltage drop.
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150mA
30-April
1N93
1n91
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cross reference zener diodes
Abstract: SCHOTTKY DIODES CROSS REFERENCE rf transistors cross reference
Text: MCC TABLE OF CONTENTS I PART INDEX DIODES TRANSISTORS VOLTAGE REGULATORS II) III) 3 3 11 12 CASE STYLE REFERENCE GUIDE ELECTRICAL SPECIFICATIONS 13 30 DIODES 30 GERMANIUM DIODES 30 SUPERFAST RECOVERY RECTIFIERS 31 35 ULTRAFAST RECOVERY RECTIFIERS HIGH EFFICIENT RECTIFIERS .37
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1N60P
Abstract: 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35
Text: 1N60, 1N60P GERMANIUM DIODES Features • Metal silicon junction, majority carrier conduction DO-35 GLASS · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics 0.075(1.9) MAX. DIA.
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1N60P
DO-35
1N60P
1N60 diode
diode 1n60
DO-35 silicon Rectifier diodes
germanium rectifier diode
1N60
1N60P,Germanium, DO-35
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NTE109
Abstract: germanium diode nte109 germanium rectifier diode Germanium Power Devices germanium diode Germanium Power Diodes Germanium diode data sheet Germanium rectifier diode germanium 78 DIODE
Text: NTE109 Germanium Diode Fast Switching General Purpose Description: The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications.
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NTE109
NTE109
Vcont/10.
germanium diode nte109
germanium rectifier diode
Germanium Power Devices
germanium diode
Germanium Power Diodes
Germanium diode data sheet
Germanium rectifier
diode germanium
78 DIODE
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NTE109
Abstract: germanium rectifier germanium rectifier diode "Germanium Diode"
Text: NTE109 Germanium Diode Fast Switching General Purpose Description: The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications.
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NTE109
NTE109
Vcont/10.
germanium rectifier
germanium rectifier diode
"Germanium Diode"
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AA137
Abstract: "Point Contact Diode" Germanium Diode tfk Germanium diode IV germanium rectifier germanium rectifier diode point contact diode germanium point contact diode Germanium Diode aa137 uhf germanium diode
Text: A A 137 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Regelspannungserzeugung in FS-Geräten Applications: AGC rectifier in TV receivers Abmessungen in mm Dimensions in mm 0 2 ,6 II- - - - - - - - - - - - - - - - - - - - 1 II 1 1 — — - 2 6 - —
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AA137
39MHz,
AA137
"Point Contact Diode"
Germanium Diode tfk
Germanium diode IV
germanium rectifier
germanium rectifier diode
point contact diode
germanium point contact diode
Germanium Diode aa137
uhf germanium diode
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OA 191
Abstract: germanium rectifier
Text: O A 182 B Germanium-Kleinflächendioden-Quartett Germanium small junction diodes quad Anwendungen: Gleichrichter in Brückenschaltung Applications: Rectifier in bridge circuit Abmessungen in mm Dimensions in mm 00,5 c [i =4= r li 10 Kunststoffgehäuse Plastic case
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GU1A100SB
Abstract: GU1A100 germanium
Text: □ GERMANIUM POWER DEVICES b3E D 3^47375 □DDOS'ìl 2T7 « G P D EXTREMELY LOW Vf GERMANIUM RECTIFIERS Io • MAXIMUM RATINGS VRM VRM rep (non-rep) Volts Volts IF M vr (RMS) Volts (surge) Amp FAMILY PKG Amp G500R2 D0200AB 500 20 24 14 12,000 G200R4 D0200AA
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G500R2
D0200AB
G200R4
D0200AA
G200R4SB
GU1A100
G60R4
G30R4
GD60R4
GD30R4
GU1A100SB
GU1A100
germanium
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backward diode
Abstract: germanium rectifier diode "backward diode" diode germanium ha494 Q62701-E36 TU 300 a GERMANIUM detector diode TU 300
Text: TU 300 Germanium backward diode TU 300 is a germanium backward diode with good RF characteristics and a particularly steep forward characteristic. TU 300 is used as rectifier, detector or mixer. TU 300 was designed to replace TU 1 B . Type TU 300 3? T~ O rd e r n u m b e r
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Q62701-E36
06tHicK
backward diode
germanium rectifier diode
"backward diode"
diode germanium
ha494
Q62701-E36
TU 300 a
GERMANIUM
detector diode
TU 300
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Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
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1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
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1N93
Abstract: 1N92 germanium rectifier 1N91 1N912 American Microsemiconductor
Text: AMERICAN MICROSEHICONDUC T 071^775 0000011 H I*AMR 'V:0l-07 3=iE D AMERICAN MICROSEMICONDUCTOR INC. 145 M a in Str eet • M a d is o n , N ew Jersey 0 7 9 4 0 GERMANIUM • 2 0 1 3 7 7 -9 5 6 6 RECTIFIERS Germanium alloy junction rectifiers types 1N91, 1N92 and
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10St-
1N93
1N92
germanium rectifier
1N91
1N912
American Microsemiconductor
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Germanium rectifier
Abstract: 148B germanium
Text: IE D E ^ j n f i n b B 0000BB7 E | “ 1989963 C E N T R A L S E M I C O N D U C T O R 92D 00337 D f'-'ô/-O T CEN295 GERMANIUM RECTIFIER AXIAL LEAD METAL CASE DIV. CENTRAL STATE INDUSTRIES, INC. DESCRIPTION The CENTRAL SEMICONDUCTOR CEN295 is a low current Germanium Rectifier for applications
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0000BB7
CEN295
JAN1N93A.
500mA
300Vac,
Germanium rectifier
148B
germanium
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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Germanium Power Devices
Abstract: Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp
Text: GERMANIUM POWER DEVICES b3E J> m 3*147375 □□DGS'ìS ^42 • G P ß ermanium Power Devices Corp. Ge Schottky Rectifier T03 pkg 60mii pin High Reverse Energy/Ultra-Low VF GD60S20 May 1993
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GD60S20
310mv
260mv
230mv
360mv
300mv
27500ma
350ma
300ma
2000pf
Germanium Power Devices
Germanium Power Diodes
430mv
germanium
Germanium power
Germanium Power Devices Corp
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cross reference zener diodes
Abstract: germanium diodes
Text: Table of Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers
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cross reference zener diodes
Abstract: power transistors cross reference GERMANIUM SMALL SIGNAL TRANSISTORS
Text: Table off Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers
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Untitled
Abstract: No abstract text available
Text: Table of Contents Page Index / Cross Reference 1 Small Signal Transistors 53 Power Transistors 81 Junction FETs 97 Silicon Diodes 101 Germanium Diodes 105 Zener Diodes 107 Transient Voltage Suppressors TVS 119 Current Limiting Diodes 125 Rectifiers 147 Chip Form For Hybrid Applications
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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Germanium Power Diodes
Abstract: germanium rectifier diode 1000 WATT smps G600R15 Germanium Power Devices germanium germanium diodes forward drop 12 v smps 5 amps 300 WATT smps Germanium Schottky diode
Text: GERMANIUM POUER DEVICES b3E D • 3TM737S 00005'n 5TB ■ £PD w m Ulermanium Power Devices Corp. G 6 0 0 R 1 5 Ge High Current Fast Recovery Rectifier Ultra-Low Vp & Thermal Impedance MAXIMUM RATINGS: 600A IF avg Average forward current rectangular waveform
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G600R15
455mv
400mv
Germanium Power Diodes
germanium rectifier diode
1000 WATT smps
G600R15
Germanium Power Devices
germanium
germanium diodes forward drop
12 v smps 5 amps
300 WATT smps
Germanium Schottky diode
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germanium power devices corporation
Abstract: G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power
Text: 3T47375 G0G0731 b=î4 l ü l Germanium Power Devices Corporation G -« *. High Reverse Énergy/Ultra-Low Vp G 15S 20 PRELIMINARY SPECIFICATIONS M k t,. ^ "*Ls°U J î 5 S ^ ! i _ | MAXIMUM RATINGS: IF avg
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3T47375
G0G0731
300psec
305mv
350mv
390mv
440mv
240mv
290mv
germanium power devices corporation
G15S20
3T47375
Germanium Power Devices
400AMPS
Germanium power
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cross reference zener diodes
Abstract: No abstract text available
Text: Table off Contents N Index / Cross Reference Page 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Transient Voltage Suppressors TVS 130 Current Limiting Diodes
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1671B
Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
Text: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac teristic over a wide temperature range. A stable peak point voltage, a low peak point
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2N1671
2N1671-2N1671A)
2N1671B)
314737S
1671B
scr firing
2N1671A
160 germanium transistor
2N 1671
1671C
Germanium power
2N1671B
MT53B256M32D1NP-062 AUT:C
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G60S15
Abstract: G60S10 Germanium power
Text: GERMANIUM POWER DEVICES 31E I • 3=147375 0000S48 S ■ E R M A N I U M PO W ER DEVICES CORP. Ge Schottky Rectifier High Reverse Energy/Ultra-Low Vp Preliminary Specifications DO-5 pkg Nov. ’90 Maximum Ratings: IF avg IFM IFSM VRWM T. JC IRRM Average Forward Current Rectangular W aveform . . 60 Amps
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0000S48
G60S15
G60S10
Germanium power
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2N1671B
Abstract: 2N1671 2N1671A 160 germanium transistor 2N1671-2N1671A 2N1671C Germanium Power Devices 029T UJ-01 2NI67
Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR The| G PD • Unijunction T ran sistor is a three term inal device having a stable “N ” type negative resistance ch arac teristic over a wide tem perature range. A stable peak point voltage, a low peak point
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2N1671
2N1671A
2N1671-2N1671A)
2N1671B)
3CI47375
G000742
2N1671B
160 germanium transistor
2N1671-2N1671A
2N1671C
Germanium Power Devices
029T
UJ-01
2NI67
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