H31D
Abstract: plastic film incoming procedure silicon carbide Germanium mesa
Text: APPLICATION NOTE Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging Diode Chips Inert Atmosphere Handling Skyworks chips are shipped in plastic chip trays containing up to 400 individual devices. The chips may be removed from the tray
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CQY78
Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge
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BPW33)
CQY78
CQY77
CQY78 IV
CQY77A
DIN5033
BPW33
germanium photodiode PIN
phototransistor 600 nm
solar cell transistor infrared
photodiode germanium
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CQY78
Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
Text: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The
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dr 25 germanium diode
Abstract: BGA758 mipi PCB layout INFINEON application note BGA758L7 C166 IEC-61000-4-2 LQW15 wlan amplifier bias circuit ghz wlan RECEIVER CIRCUIT DIAGRAM
Text: BGA758L7 BGA758L 7 Lo w Noi s e Amplifi er f or 5 - 6 G H z W L A N / Wi M A X A p p l i c a t i o n s Application Note AN188 Revision: Rev. 1.0 2010-02-20 RF and Protecti on Devi c es Edition 2010-03-10 Published by Infineon Technologies AG 81726 Munich, Germany
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BGA758L7
BGA758L
AN188
AN188,
BGA758L7
dr 25 germanium diode
BGA758
mipi PCB layout
INFINEON application note
C166
IEC-61000-4-2
LQW15
wlan amplifier bias circuit
ghz wlan RECEIVER CIRCUIT DIAGRAM
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RECTIFIER DIODE 5A, 2500V VRRM
Abstract: DO220 transistor smps high voltage Diode BYT42 M byv26 smd MARK smd diode general semiconductor byv26 germanium rectifier diode photo thyristor tunnel diode
Text: Vishay Telefunken General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:
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wifi amplifier circuit
Abstract: BFP740 BFP740FESD 2.4 ghz transistor wifi amplifier AN217 IF TVS 0201 Diode AN217 bidirectional wifi amplifier wifi schematic MIPI omnivision
Text: ES D- Ro bu st B FP 740 ES D 2 . 3 ~ 2 . 7 G H z W i F i / Wi MA X L NA Applic atio ns Application Note AN217 Revision: Rev. 1.0 2010-07-08 R F a n d P r o t e c t i o n D e v i c es Edition 2010-07-08 Published by Infineon Technologies AG 81726 Munich, Germany
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AN217
20dBm
AN217,
BFP740FESD
wifi amplifier circuit
BFP740
BFP740FESD
2.4 ghz transistor wifi amplifier
AN217 IF
TVS 0201 Diode
AN217
bidirectional wifi amplifier
wifi schematic
MIPI omnivision
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MDA920A4
Abstract: full wave controlled rectifier using RC triggering circuit Triac motor speed control Speed control of dc motor using TL494 OPTO TRIAC moc 3041 CIRCUITS BY USING 2N6027 zero crossing opto diac sprague 11z13 MOC3011 soft start ua1016b
Text: SECTION 6 APPLICATIONS Edited and Updated PORTION OF WAVEFORM APPLIED TO LOAD Because they are reliable solid state switches, thyristors have many applications, especially as controls. One of the most common uses for thyristors is to control ac loads such as electric motors. This can be done either by
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228A6FP
MR506
MDA920A4
full wave controlled rectifier using RC triggering circuit
Triac motor speed control
Speed control of dc motor using TL494
OPTO TRIAC moc 3041
CIRCUITS BY USING 2N6027
zero crossing opto diac
sprague 11z13
MOC3011 soft start
ua1016b
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Untitled
Abstract: No abstract text available
Text: 19-1856; Rev 0; 11/00 10.7Gbps Laser Diode Driver Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Single +5V or -5.2V Power Supply 108mA Supply Current Operates Up to 10.7Gbps 50Ω On-Chip Input Termination Resistors Programmable Modulation Current Up to 100mA
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108mA
100mA
OC-192
STM-64
MAX3930E/D
MAX3930
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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transmitter circuit using laser diode
Abstract: MAX3910 MAX3930 MAX480 STM-64 laser stm-64 10gbps 2dbm
Text: 19-1856; Rev 0; 11/00 10.7Gbps Laser Diode Driver Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Single +5V or -5.2V Power Supply 108mA Supply Current Operates Up to 10.7Gbps 50Ω On-Chip Input Termination Resistors Programmable Modulation Current Up to 100mA
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108mA
100mA
OC-192
STM-64
MAX3930E/D
MAX3930
transmitter circuit using laser diode
MAX3910
MAX3930
MAX480
laser stm-64 10gbps 2dbm
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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Untitled
Abstract: No abstract text available
Text: 3 7 bfi522 w 0010523 3 flb H P L S B GEC PLESSEY S E M I C O N D U C T O R S DS3415-1.2 DC3000 Series BROADBAND BACK DIODE DETECTORS These detector modules consist of a germanium back diodechipwith integrated thin film capacitorand broadband matching cicuit on a microstrip tile.
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bfi522
DS3415-1
DC3000
100MHz
20GHz
DC3033/34
-20dBm
37bfl522
001052b
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rca transistor manual
Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis
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AN545A
Abstract: motorola application notes AN-489 motorola AN-545A motorola AN490 motorola AN489 AN489 schematic diagram video television Motorola mc1330 MC1350
Text: AN-545A Application Note r TELEVISION VIDEO IF AMPLIFIER USING INTEGRATED CIRCUITS Prepared by Applications Engineering T his applications note considers the requirements of the video IF am plifier section of a television receiver, and gives working circuit schematics using integrated
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AN-545A
AN545A/D
AN545A
motorola application notes
AN-489 motorola
AN-545A
motorola AN490
motorola AN489
AN489
schematic diagram video television
Motorola mc1330
MC1350
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led bar siemens
Abstract: SEMICONDUCTOR PACKAGING ASSEMBLY TECHNOLOGY selenium diode silicon carbide LED silicon carbide US Lasers Siemens Components
Text: SIEMENS Innovators in Optical Information Technology Company Overview Siemens Components is a major producer in the sem iconductor industry, with facilities virtually world wide. The Optical Information Technology Group OIT is headquartered in Regensburg.
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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astable
Abstract: No abstract text available
Text: 11C58 VOLTAGE CONTROLLED MULTIVIBRATOR 11 COO S E R IE S GENERAL DESCRIPTION - The 11C58 is an ECL astable multivibrator utilizing current mode circuitry and having em itter follow er buffers to provide ECL output levels. Operating frequency is determ ined by an applied voltage V cx in conjunction with an external timing
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11C58
11C58
astable
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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cq 636 g diode
Abstract: DUAL PRE-AMPLIFIER FOR TAPE RECORDER TA7658P 1n60 toshiba 1s1555 diode Diode Equivalent 1N60 silicon diode 1S1555 Germanium audio Amplifier diagram transistor audio preamplifier circuit diagram PRE-AMPLIFIER FOR TAPE RECORDER
Text: DUAL PREAMPLIFIER FOR TAPE RECORDER Unit in mm The TA7658P is a dual preamplifier with ALC Automatic Level Control designed for use in a record/playback amplifier of tape recorder. It is suitable for a stereo set and a radio cassette recorder. . DIP 14 PIN (Dual In-Line Package)
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TA7658P
1747T
TA7658P
1S1555
cq 636 g diode
DUAL PRE-AMPLIFIER FOR TAPE RECORDER
1n60 toshiba
1s1555 diode
Diode Equivalent 1N60
silicon diode 1S1555
Germanium audio Amplifier diagram
transistor audio preamplifier circuit diagram
PRE-AMPLIFIER FOR TAPE RECORDER
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Diode Equivalent 1N34A
Abstract: TC5517APL TMM2016P catalyst research corp TC5514 equivalent of diode 1N34A TC5518BPL mk4104 tmm2016 TC5516
Text: Professional Program Session Record 17 Battery Backup for the Life of the Product CATALYST RESEARCH CORPORATION 1421 C LAR KVIEW ROAD • BALTIM ORE, M A R Y L A N D 21209-9987 TELEPHONE 301 296-7000 • TELEX. 87-768 • U.S.A. Session 17 Battery Backup For the Life of the Product
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Small-signal Field-effect Transistors QUALITY General section • Acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors General Small-signal Field-effect Transistors QUALITY Total Quality Management Philips Semiconductors is a Quality Company, renowned for the high quality of our products and service. We keep alive this tradition by constantly aiming towards one
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TIS69 equivalent
Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the
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2N5045,
2N5046,
2N5047
TIS69 equivalent
2N3575
Germanium itt
TIS59
TIS58
2N2386
TIS26
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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