GE C20B
Abstract: S1207BH S200BR S200Bl MCR21B BP2M SK3577 C20B BTY79-200R 2N3755
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number SCRs, VDRM 5 10 S2006FS21 S2006LS2 S2006FS31 S2006LS3 S2006Fl S2006L S1007BJ S1010BJ BTY79-200R S1005BH ~~~~~~~ 15 20 2N616B HSE5054 HS27 SK3577 T7F200CRC T7F200URC 2N3937 Cl0B g~~~ 25 30 C20B C22B TM2007
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S2006FS21
S2006LS2
S2006FS31
S2006LS3
S2006Fl
S2006L
S1007BJ
S1010BJ
BTY79-200R
S1005BH
GE C20B
S1207BH
S200BR
S200Bl
MCR21B
BP2M
SK3577
C20B
2N3755
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Untitled
Abstract: No abstract text available
Text: When you choose Hammond - you choose. Experience: Building quality racks & cabinets for over 60 years! Sampling from our oldest surviving catalog G53 - printed in 1939 Support: In stock factory & distributor inventory! The best products in the world are no good
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ff450r12me3
Abstract: C28T sod6 SOT23 transistor R2C t60403-d4615 C-EUC1206 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip
Text: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-11-02 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.
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AN2008-02
2ED100E12-F2
6ED100E12-F2
AN2007-04,
ff450r12me3
C28T
sod6
SOT23 transistor R2C
t60403-d4615
C-EUC1206
IGBT DRIVER SCHEMATIC
2ED100E12
ge c30b
IGBT DRIVER SCHEMATIC chip
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VAC t60403
Abstract: ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
Text: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-10-07 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.
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AN2008-02
2ED100E12-F2
6ED100E12-F2
AN2007-04,
VAC t60403
ff450r12me3
SOD323R
T60403
IGBT DRIVER SCHEMATIC
t60403-d4615
T60403-D4615-X054
2ED100E12
AN2007-04
IGBT DRIVER SCHEMATIC chip
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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Nokia 3220 LCD
Abstract: ILI9163
Text: ILI9163 a-Si TFT LCD Single Chip Driver 132RGBx162 Resolution and 262K color Datasheet Version: V0.18 Document No.: ILI9163DS_V0.18.pdf ILI TECHNOLOGY CORP. 8F, No.38, Taiyuan St., Jhubei City, Hsinchu County, Taiwan 302, R.O.C. Tel.886-3-5600099; Fax.886-3-56-00585
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ILI9163
132RGBx162
ILI9163DS
300um
280um
Nokia 3220 LCD
ILI9163
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SCR GE C20F
Abstract: scr C20F scr c20d ge c30b GE C20F GE C20B GE scr C20f GE SCR c20b GE C1220 scr GE C33B
Text: PHASE CONTROL SCR’s MEDIUM CURRENT 7.5 TO 25 AMPERES CIO GE TYPE CM 2N1770A-77A* 2N1770-78 JED EC C36 C31 -33 C l 22 — — — 2N1842-50 — — — C20-22 C3Q-32 C37 C15 E L E C T R IC A L S P E C IF IC A T IO N S V O LTA G E RANGE 25-400 25-600 25-600
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C20-22
C30-32
C31-33
2N1770A-77A*
2N1770-78
2N1842-50
2n1847
2N1776A
2N1776
2n1848
SCR GE C20F
scr C20F
scr c20d
ge c30b
GE C20F
GE C20B
GE scr C20f
GE SCR c20b
GE C1220 scr
GE C33B
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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ESM692
Abstract: ESM693 sbru CB-97 ESM 200
Text: *ESM 692 *ESM 693 PNP S IL IC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R TR A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X Compl. of ESM 642, ESM 643 Preferred device Dispositif recommandé • High breakdown voltage H aute Tension de claquage
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CB-97
-10mA
ESM692
ESM693
sbru
ESM 200
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ses 554
Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
Text: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12
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2369IR)
ses 554
SO3572R
marking n47
BSV52R
F5BF
marking 502S
SO3570R
Marking P18
SO2221A
BSR15R
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2N2891
Abstract: 2N2890 C22B
Text: 2N 2890 2N 2891 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLANAR E P ITAXIAU X - LF large signal amplification high voltage A m plification B F grands signaux (haute tension) • Switching up to 1 A 80 V v CEO h21E(1A) \J 30 - 90
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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bu126
Abstract: No abstract text available
Text: BU 126 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS T O R S I L I C I U M N P N , M E S A T R IP L E D IF F U S E P R E L IM IN A R Y D A T A N O T IC E P R E L / M I N A I R E T h e BU 1 2 6 ty p e is a fast high voltage transis
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15/us
CB-19
bu126
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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fonction
Abstract: DE 113 BU113 deflexion
Text: BU 113 N PN S IL IC O N T R A N S IS T O R ,T R IP L E D IF F U S E D M E S A TR AN S IS TO R S IL IC IU M ,MESA T R IP LE D IF F U S E B U 1 1 3 transistor is prim a rily intended fo r use in ho rizontal deflexion o u tp u t stage color television receivers
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BU113
CB-19
468n2
fonction
DE 113
deflexion
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BFW16A
Abstract: bfw16 transistor bfw16a BFW 16
Text: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V
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UTILI18
BFW16A
BFW16A
bfw16
transistor bfw16a
BFW 16
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D 5038 Transistor Horizontal
Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching
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CB-69
14f4g
D 5038 Transistor Horizontal
amplificateur audio a base de transistor
transistor 2n 892 X1
amplificateur BF
transistor ST TYN 616
equivalent of transistor bul 38 da
bd 317 schema
transistor 3055 out hv
ESM214
Transistor bdy 58
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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C520D
Abstract: rft lautsprecher vqe23 1PP75 Transistoren DDR MAA725 Radio Fernsehen Elektronik U706D Halbleiterinformation U311D
Text: H a lb le ite rin fo rm a tio n e n - 74 M itte ilu n g aus dem VEB K o m b in a t H a lb le ite rw e rk F ra n k fu rt/O . Ing. W O L F R A M a FISCHER S o w jetische T ra n s is to re n 2 5 Germ anium -npn-Legierungstransistoren M n 35 bis M FI 38 A Teil 1
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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PDF
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Katalog tesla tranzistor
Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Text: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA
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KFY18,
KFY34,
KFY46
KSY63
KSY82
Katalog tesla tranzistor
KF520
KF173
Tesla katalog
KF630D
KF521
ku611
KD502
KF517A
kf517
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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PDF
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B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
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