Untitled
Abstract: No abstract text available
Text: SbE D 7^2^237 004023h Ifi? IS6TH M54HCT563/573 M74HCT563/573 SGS-THOMSON m OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT HCT563 INVERTING - HCT573 NON-INVERTING s G s -THOMSON T -n -o r- n HIGH SPEED tpD = 20 ns TYP. at VCc = 5V LOW POW ER DISSIPATION Ic e = 4 /iA (MAX.) at TA = 2 5 °C
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004023h
M54HCT563/573
M74HCT563/573
HCT563
HCT573
54/74LS563/573
M54HCTXXX
M74He
M54/74HCT563/573
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Tyco 9831
Abstract: 600G GDH010STRNS04
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED EOR P U B L IC A T IO N ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S R IG H T S - , - RESERVED. C O R P O R A T IO N . PART NUMBER LOCATED HERE D £ 1.00 [.039] MONTH T YEAR 1991,1 2 3 4
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31MAR2000
24JUN08
UL94V-0
GDH02S0N04
GDH02S04
15MAR05
Tyco 9831
600G
GDH010STRNS04
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BD-E521RD
Abstract: E523
Text: Part No. Emitted Wave Length Common Common Anode Cathode BD-E521RD BD-F521RD E525RD F525RD Bright Red E522RD F522RD Green E523RD FS23RD Size 0.54- Absolute Maximum Peak Digit Color Xp nm Red Yellow AX Pd Electro-Optical Data (At 10 mA) Peak Typ. Max. IvTyp.
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BD-E521RD
E525RD
E522RD
BD-F521RD
F525RD
F522RD
FS23RD
F524RD
F526RD
BS-C821RD
E523
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108-18030
Abstract: Tyco 108-18030
Text: THIS DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 2 009 RELEASED TYCO ELECTRONICS FOR ALL CORPORATION. PUBLICATION INTERNATIONAL MA T E D W I TH: P A S S E N D ZU: RIGHTS RESERVED. LOC 1355350 DIST REVISIONS A p LTR PROJ E CT NO. : u \ J A98-52103 111 111
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02N0V1999
22JUL2010
A98-52103
355154A
241UN1999
108-18030
Tyco 108-18030
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Untitled
Abstract: No abstract text available
Text: HARRIS s e m i c o n d u c t o r H A 4 2 0 1a Ê ÊJrm ^T^K ^f Wideband, 1 x 1 Video Crosspoint Switch with Tally Output Aprii 1995 Description Features Low Power The HA4201 is a very wide bandwidth 1 x 1 crosspoint
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105mW
HA4201
105mW
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BSS123
Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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BSS100
BSS123
BSS100:
BSS123:
k501130
BSS123
bS0113D
85S100
TRANSISTOR BSS123
K5011
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Thomas Betts DIN
Abstract: D00A GDH08S IC 8155 GDR025 dh06 GDH04S 3S125 PC 838 GDH02S
Text: Dip Switches “Recessed Rocker” fT T \ pC Surface Mount “Half Pitch” .050" Low Profile vXL* O C IIV j .047 K 1-20 111 2 3 4 S e 7 ft GDR .378 («.«0) C lank Profile Recessed Rocker Actuator .270 (8.85) ON ”.152 (3.05) OFF .1 0 0 - -LENGTH- fv ? .1
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r0DD00DDDDD
000QD-
GDR02
GDR04
GDR025
GDR04S
PR08S
-D00a
J-27J-H
GDH02S
Thomas Betts DIN
D00A
GDH08S
IC 8155
dh06
GDH04S
3S125
PC 838
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