EIA-364-18
Abstract: JESD22-B102 EIA-364-27 POKE EIA-364-13 EIA-364-20 EIA-364-28 EIA-364-31 EIA-364-32 quality acceptance plan
Text: Product Specification 108-2284 24Jun08 Rev A SMT and Through-Hole Poke-In Connector 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Surface Mount SMT and Through-Hole Poke-In Connectors used with 18 to 22 AWG solid copper wire, 18 to
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24Jun08
EIA-364-18
JESD22-B102
EIA-364-27
POKE
EIA-364-13
EIA-364-20
EIA-364-28
EIA-364-31
EIA-364-32
quality acceptance plan
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DIODE 300U 120 C
Abstract: No abstract text available
Text: 300U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Alloy diode RoHS • Popular series for rough service COMPLIANT • Stud cathode and stud anode version • RoHS compliant • Designed and qualified for industrial level
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DO-205AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
DIODE 300U 120 C
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Untitled
Abstract: No abstract text available
Text: P Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd Pb-free • Low temperature coefficient down to 5 ppm/°C - 25 °C; + 85 °C
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MIL-PRF-55342G
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: H EE GEN FR ALO CAT22C10 256-Bit Nonvolatile CMOS Static RAM LE FEATURES • Single 5V Supply A D F R E ETM ■ Low CMOS Power Consumption: –Active: 40mA Max. –Standby: 30µA Max. ■ Fast RAM Access Times: –200ns –300ns ■ JEDEC Standard Pinouts:
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CAT22C10
256-Bit
200ns
300ns
18-lead
16-lead
CAT22C10
MD-1082
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IRFI9Z34G
Abstract: SiHFI9Z34G SiHFI9Z34G-E3
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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IRFI9Z34G,
SiHFI9Z34G
O-220
18-Jul-08
IRFI9Z34G
SiHFI9Z34G-E3
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malrek
Abstract: Capacitor 24 0.25 uF vishay
Text: EKV Vishay Roederstein Aluminum Capacitors Radial Style FEATURES • Polarized aluminum electrolytic capacitor • High ripple current RoHS • High reliability COMPLIANT • High load life up to 10 000 h APPLICATIONS • For electronic lighting ballast • Power supply
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60384-4/EN130300
18-Jul-08
malrek
Capacitor 24 0.25 uF vishay
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IRFIB7N50L
Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Text: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration
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IRFIB7N50L,
SiHFIB7N50L
O-220
18-Jul-08
IRFIB7N50L
SiHFIB7N50L-E3
ktp12
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10TQ035
Abstract: 10TQ045 10TQ 40HFL40S02 IRFP460
Text: 10TQ. Series Vishay High Power Products Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Base cathode 2 TO-220AC • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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O-220AC
18-Jul-08
10TQ035
10TQ045
10TQ
40HFL40S02
IRFP460
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Untitled
Abstract: No abstract text available
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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IRFI9Z34G,
SiHFI9Z34G
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling
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IRFP048,
SiHFP048
O-247
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements
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IRFP244,
SiHFP244
O-247
O-220
12-Mar-07
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8ETX06
Abstract: No abstract text available
Text: 8ETX06/8ETX06FP Vishay High Power Products Hyperfast Rectifier, 8 A FRED PtTM FEATURES 8ETX06 8ETX06FP • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Fully isolated package VINS = 2500 VRMS
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8ETX06/8ETX06FP
8ETX06
8ETX06FP
E78996
O-220AC
O-220
12-Mar-07
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93123
Abstract: murb820
Text: MURB820/MURB820-1 Vishay High Power Products Ultrafast Rectifier, 8 A FRED PtTM FEATURES • Ultrafast recovery time MURB820-1 MURB820 • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Designed and qualified for industrial level
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MURB820/MURB820-1
MURB820
MURB820-1
12-Mar-07
93123
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Untitled
Abstract: No abstract text available
Text: EKB Vishay Roederstein Aluminum Capacitors Radial Style FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case • Miniaturized, high CV-product per unit volume • Extended temperature range: 105 °C
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11-Mar-11
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IRFP15N60L
Abstract: SiHFP15N60L
Text: IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.385 Available RoHS* Qg (Max.) (nC) 100 Qgs (nC) 30 • Lower Gate Charge Results in Simple Drive
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IRFP15N60L,
SiHFP15N60L
O-247
18-Jul-08
IRFP15N60L
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irfp064 driver circuit
Abstract: IRFP064 IRFP064 APPLICATION
Text: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP064,
SiHFP064
O-247
O-247
18-Jul-08
irfp064 driver circuit
IRFP064
IRFP064 APPLICATION
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IRFP244
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements
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IRFP244,
SiHFP244
O-247
O-220
O-218
18-Jul-08
IRFP244
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irfiz34g
Abstract: SiHFIZ34G SiHFIZ34G-E3
Text: IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating
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IRFIZ34G,
SiHFIZ34G
O-220
18-Jul-08
irfiz34g
SiHFIZ34G-E3
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IRFP240
Abstract: irfp240pbf
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the
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IRFP240,
SiHFP240
O-247
O-247
O-220
O-218
18-Jul-08
IRFP240
irfp240pbf
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Roederstein Bipolar capacitor
Abstract: No abstract text available
Text: EKSU Vishay Roederstein Aluminum Capacitors Radial Style Non-Polar FEATURES • Non-polarized bi-polar aluminum electrolytic capacitor • Small size • High temperature range RoHS COMPLIANT APPLICATIONS • Circuits with changing or unknown polarity Component outlines
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18-Jul-08
Roederstein Bipolar capacitor
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Untitled
Abstract: No abstract text available
Text: EKB Vishay Roederstein Aluminum Capacitors Radial Style FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case • Miniaturized, high CV-product per unit volume • Extended temperature range: 105 °C
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18-Jul-08
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CAT24C44VI-GT3
Abstract: CAT24C44 CAT24C44v 24c44
Text: CAT24C44 256-Bit Serial Nonvolatile CMOS Static RAM FEATURES • Single 5V Supply ■ JEDEC Standard Pinouts: –8-lead DIP –8-lead SOIC ■ Infinite EEPROM to RAM Recall ■ CMOS and TTL Compatible I/O ■ 100,000 Program/Erase Cycles EEPROM ■ Low CMOS Power Consumption:
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CAT24C44
256-Bit
CAT24C44
MD-1083
CAT24C44VI-GT3
CAT24C44v
24c44
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. REl EaSH TÔR Ru B l i ì a Tìò n - BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S J AU" RIGHTS RESERVED- LTR 01 DESCRIPTION REVISED ECR—0 8 —0 1 5 8 0 8 DATE DWN APVD 24JUN08 SF
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24JUN08
01AUG01
31MAR2000
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124lm
Abstract: OJ-SS-112LM
Text: 2 3 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO FIFCTRONICS CORPORATION. ALL MGHIS RESERVED? C COPYRIGHT o D L0C HB DIST REVISIONS p LTR DESCRIPTION ECN DATE DWN APVD C MODIFY VENT HOLE&ADD NOTE ECO-06-008136 15—FEB—06 JG HSU D CHANGE TE LOGO&DATE CODE
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24-JUN-08
124LMH
118LMH
118LMH
112LMH
109LMH
106LMH
124lm
OJ-SS-112LM
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