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    Untitled

    Abstract: No abstract text available
    Text: SbE D 7^2^237 004023h Ifi? IS6TH M54HCT563/573 M74HCT563/573 SGS-THOMSON m OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT HCT563 INVERTING - HCT573 NON-INVERTING s G s -THOMSON T -n -o r- n HIGH SPEED tpD = 20 ns TYP. at VCc = 5V LOW POW ER DISSIPATION Ic e = 4 /iA (MAX.) at TA = 2 5 °C


    OCR Scan     		PDF 004023h M54HCT563/573 M74HCT563/573 HCT563 HCT573 54/74LS563/573 M54HCTXXX M74He M54/74HCT563/573

    NDB4060

    Abstract: NDP4060
    Text: July 1996 Nationa I Semiconductor " NDP4060/ NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP4060/NDB4060 bSD113G 0G4053Ã bS01130 004053R NDB4060 NDP4060