CT-1004
Abstract: D4808
Text: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω
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STB30NM50N
STI30NM50N
STF30NM50N
STP30NM50N,
STW30NM50N
O-220FP,
O-220,
O-247
CT-1004
D4808
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STW30NM50N
Abstract: 30NM50N STP30NM50N STB30NM50N STF30NM50N STI30NM50N
Text: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω
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STB30NM50N
STI30NM50N
STF30NM50N
STP30NM50N,
STW30NM50N
O-220FP,
O-220,
O-247
STB30NM50N
STI30NM50N
STW30NM50N
30NM50N
STP30NM50N
STF30NM50N
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GC2035
Abstract: Cutler-Hammer HFD J250H GC2015 BS 4752 E125H j250e cutler hammer ghb CUTLER HAMMER E125S Cutler-Hammer* E125B
Text: Cutler-Hammer Molded Case Circuit Breakers 15-100 Amperes January 2001 12-11 Vol. 1, Ref. No. [0477] G-Frame Types GC, GHC and HGHC Circuit Breakers Product Selection Table 12-14. Type GC Thermal-Magnetic Circuit Breakers with Non-interchangeable Trip Units
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125/250V
GC1015®
GC1020
GC1025
GC1030
GC1035
GC1040
GC1045
GC1050
GC2035
Cutler-Hammer HFD
J250H
GC2015
BS 4752
E125H
j250e
cutler hammer ghb
CUTLER HAMMER E125S
Cutler-Hammer* E125B
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DTM180AA
Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS
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200mW
100mW
DTM180AA
DT-408
STD8018A
LP05018
LS1012
DTM180AB
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Untitled
Abstract: No abstract text available
Text: STW 9 NA60 S T H 9 N A 6 0 FI S G S -T H O M S O N [M O ig œ ilL ie ra *® N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STW 9N A60 STH 9N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 0 .8 Q. < 0 .8 Q. 9.5 A 6.4 A TYPICAL RüS(on) = 0.69 Cl
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A60FI
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Untitled
Abstract: No abstract text available
Text: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STB6NA60
O-262)
O-263)
O-262
O-263
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STP4NB80
Abstract: No abstract text available
Text: STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 iî - 4A - TO -220/T0220FP PowerMESH MOSFET TYPE V S TP4N B80 STP 4N B80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 n 4 A 4 A TYPICAL RDS(on) = 3 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP4NB80
STP4NB80FP
-220/T0220FP
B80FP
STP4NB80/FP
O-22QFP
STP4NB80
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ STP80NE06-10 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE S T P 8 0 N E 0 6 -1 0 V dss 60 V R d Id S (o i i ) <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY
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STP80NE06-10
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STP60
Abstract: stp60n06
Text: SGS-THOMSON £j ï ¡mora « STP60N05-16 STP60N06- 16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 dss 50 V 60 V . RDS on Id < 0 .0 1 6 Q. < 0 .0 1 6 Q. 60 A 60 A Q . . TYPICAL RDs(on) = 0.013 AVALANCHE RUGGED TECHNOLOGY
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STP60N05-16
STP60N06-
STP60
stp60n06
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP3NA100 STP3N A1OOFI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE S T P 3 N A 1 00 S T P 3 N A 1 00FI • . . . . . . V dss R d S(oii) Id 1 0 00 V 1 0 00 V <5 Q. < 5 0. 3 .5 A 2 A TYPICAL R D S (on) =4.3 Î2
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STP3NA100
STP3NA10
ISOWATT22Q
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Headland Technology Product Group
Abstract: headland headland technology 80386 microprocessor pin out diagram GC205 M240-M241 CC182 logical block diagram of 80286 headland 386 SPA21
Text: II GCK181 Universal PS/2 Chip Set Headland Technology Inc FEATURES d e s c r ip t io n • Universal Micro Channel Com patible chip set supporting the Intel 80286,386SX and 80386 to 25 MHz • Designed in 0.9 Micron channel length HCMOS and BiCMOS in Surface Mount Packages
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GCK181
386SX
20MHz
20MHz
Headland Technology Product Group
headland
headland technology
80386 microprocessor pin out diagram
GC205
M240-M241
CC182
logical block diagram of 80286
headland 386
SPA21
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ym 238
Abstract: No abstract text available
Text: STP50NE10 N - CHANNEL 100V - 0.021Q - 50A - D2PAK STripFET POWER MOSFET TYPE S TP 50N E10 V dss RDS on Id 1 00 V <0.027 Q 50 A TYPICAL Ftos(on) = 0.021 Q m EXCEPTIONALdv/dt CAPABILITY . . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C . APPLICATION ORIENTED
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STP50NE10
ym 238
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Untitled
Abstract: No abstract text available
Text: STP45N10 STP45N1OFI N - CHANNEL 100V - 0.027Î2 - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE V STP45N10 S T P 45 N 1 OFI . . . . . . . . dss 100 V 100 V R D S o n Id < 0 .0 3 5 Q. < 0 .0 3 5 CÌ 45 A 24 A TYPICAL RDs(on) = 0.027 £2 AVALANCHE RUGGED TECHNOLOGY
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STP45N10
STP45N1OFI
O-220/TO-220FI
STP45N
10/FI
ISQWATT220
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VNV35N07
Abstract: No abstract text available
Text: VNP35N07FI VNB35N07/VNV35N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 Q. 0.028 a 0.028 n 35 A 35 A 35 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNP35N07FI
VNB35N07/VNV35N07
VNB35N07
VNV35N07
VNP35N07FI,
VNB35N07
NB35N07-VNV35N07
PowerSO-10
VNV35N07
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON :LiM iO gS STP3NA1oo STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE S T P 3N A 1 00 S T P 3N A 1 00 F I . rn . . . . . V dss RDS(on Id 1 000 V 1 000 V <5 Q < 5 Q 3.5 A 2 A TYPICAL RDS(on) = 4.3 Q ± 30V GATE TO SOURCE VOLTAGE RATING
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STP3NA100FI
STP3NA100
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Untitled
Abstract: No abstract text available
Text: rz 7 SGS-THOMSON m 7# S T B 1 8N20 RaDeiBOILiCTI^OTDeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss RDS on Id STB18N20 200 V < 0.18 n 18 A Q • TYPICAL RDS(on) =0.145 AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED
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STB18N20
O-262)
O-263)
O-262
O-263
7T2T237
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7AS1
Abstract: No abstract text available
Text: STGP7NB60HD STGP7NB60HDFP N-CHANNEL 7A - 600V - TO-220/FP PowerMESH IGBT TYPE STG P7N B60H D STG P7N B60H D FP . V CES VcE sat lc 6 00 V 6 00 V < 2 .8 V < 2 .8 V 7 A 7 A H IG H IN PU T IM PEDA N C E (VO LTA G E DR IVEN) . LOW ON-VOLTAGE DROP (Vcesat) .
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STGP7NB60HD
STGP7NB60HDFP
O-220/FP
7AS1
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.2TY
Abstract: gc224 1N239
Text: t r i SGS-THOMSON IRF840/FI IRF841/FI ¡L[iOT 2 iQ(gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R d S(o ii ) Id IR F 8 4 0 IR F 8 4 0 F I 500 V 500 V 0 .8 5 a 0 .8 5 Q 8 A 4 .5 A IR F841 IR F 8 4 1 F I 450 V 450 V 0 .8 5 a 0 .8 5 L i 8 A 4 .5 A
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IRF840/FI
IRF841/FI
O-220
ISOWATT220
GC22430
.2TY
gc224
1N239
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4NB80
Abstract: STP4NB80 c60930
Text: STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Î2 - 4A - T O -220/T0220F P PowerMESH MOSFET TYPE V STP4NB 80 STP4NB80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 Q, 4 A 4 A TYPICAL RDS(on) = 3 £2 EXTREMELY HIGHdv/dt CAPABILITY 100% AVALANCHE TESTED
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STP4NB80
STP4NB80FP
-220/T0220F
4NB80
c60930
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STB80NE06-10
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ STB80NE06-10 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE S T B 8 0 N E 0 6 -1 0 V dss 60 V R d Id S (o i i ) <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY
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STB80NE06-10
O-263
STB80NE06-10
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STP5N90
Abstract: STP5N90FI CC-20-5
Text: SGS-THOMSON BteiOHLKeiTKsJiOei w /-v-n o . r- • TYPE V dss STP5N90 STP5N90FI . • . . . . , 900 V 900 V R STP5N90 STP5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR d S O II < 2.4 Q < 2.4 Q Id 5A 2.8 A TYPICAL RDS(on) = 1.9 Q AVALANCHE RUGGED TECHNOLOGY
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STP5N90
STP5N90FI
STP5N90
STP5N90FI
gc34750
1000VOS
STP5N90/FI
CC-20-5
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S935
Abstract: No abstract text available
Text: STP45N10 STP45N10FI N - CHANNEL 100V - 0.027a - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYP E STP45N10 S T P 45N 1 0FI Voss RDS on Id 100 V 100 V < 0 .0 3 5 Î2 < 0 .0 3 5 Q 45 A 24 A . TYPICAL Rds(oh) = 0.027 Cl m AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED
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STP45N10
STP45N10FI
O-220/TO-220FI
TP45N
S935
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erso
Abstract: VNV35N07
Text: VNP35N07FI VNB35N07/VNV35N07 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp R D S o n lli m VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.0 28 Î2 0 .0 28 Q 0.0 28 Q 35 A 35 A 35 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNP35N07FI
VNB35N07/VNV35N07
VNB35N07
VNV35N07
VNP35N07FI,
erso
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