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    STP50NE10 Price and Stock

    STMicroelectronics STP50NE10

    MOSFET N-CH 100V 50A TO220AB
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    DigiKey STP50NE10 Tube
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    STMicroelectronics STP50NE10L

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    Quest Components STP50NE10L 8
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    STP50NE10 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP50NE10 STMicroelectronics N-channel 100V - 0.021O - 50A TO-220 STripFET Power MOSFET Original PDF
    STP50NE10 STMicroelectronics N-Channel 100 V - 0.021 ohm - 50 A TO-220 STripFET Power MOSFET Original PDF
    STP50NE10 STMicroelectronics N - CHANNEL 100V - 0.021Ohm - 50A TO-220 STripFET POWER MOSFET Original PDF
    STP50NE10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP50NE10L STMicroelectronics N - CHANNEL 100V - 0.020Ohm - 50A TO-220 STripFET POWER MOSFET Original PDF
    STP50NE10L STMicroelectronics N-Channel 100 V - 0.020 ohm - 50 A TO-220 STripFET Power MOSFET Original PDF
    STP50NE10L Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STP50NE10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD-50 diode

    Abstract: STP50NE10L
    Text: STP50NE10L  N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10L O-220 SD-50 diode STP50NE10L

    p50ne1

    Abstract: No abstract text available
    Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P Description t c e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t


    Original     		PDF STP50NE10 O-220 p50ne1

    STP50NE10L

    Abstract: GS 393
    Text: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10L O-220 STP50NE10L GS 393

    STP50NE10L

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10L O-220 STP50NE10L

    p50ne1

    Abstract: P50NE10 p50ne STP50NE10
    Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization


    Original     		PDF STP50NE10 O-220 O-220 STP50NE10 P50Nerein p50ne1 P50NE10 p50ne

    STP50NE10L

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED


    Original     		PDF STP50NE10L O-220 STP50NE10L

    STP50NE10L

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10L O-220 STP50NE10L

    STP50NE10

    Abstract: No abstract text available
    Text: STP50NE10  N - CHANNEL 100V - 0.021Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10 O-220 STP50NE10

    STP50NE10

    Abstract: No abstract text available
    Text: STP50NE10  N - CHANNEL 100V - 0.021Ω - 50A - D2PAK STripFET POWER MOSFET TYPE STP50NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10 O-220 STP50NE10

    p50ne1

    Abstract: p50ne10 st mosfet st 50a st 393 JESD97 STP50NE10
    Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization


    Original     		PDF STP50NE10 O-220 p50ne1 p50ne10 st mosfet st 50a st 393 JESD97 STP50NE10

    STP50NE10

    Abstract: No abstract text available
    Text: STP50NE10 N - CHANNEL 100V - 0.021Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10 O-220 STP50NE10

    stu9nc80zi

    Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
    Text: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L


    Original     		PDF STT2PF60L STT3PF30L STT3PF20L STT4NF30L STT1NF100 STT5PF20V STT3PF20V STT5NF20V PowerSO-10, ISOWATT218, stu9nc80zi STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    CYN17F-3

    Abstract: CYN17 cyn17f Efd30 24v flyback transformer 24V PULSE TRANSFORMER microcontroller STP50NE10 AN1377 EFD30 ID12
    Text: AN1377 APPLICATION NOTE FLEXIBLE DC-DC CONVERTERS FOR EASY INCLUSION IN AN OEM PROJECT B. Taylor - J. Noe 1. INTRODUCTION. Many OEMs, when they are involved with introducing a new product, have little or no experience of designing in the DC Sourced power supply for such a project. For one reason, or another, they may


    Original     		PDF AN1377 CYN17F-3 CYN17 cyn17f Efd30 24v flyback transformer 24V PULSE TRANSFORMER microcontroller STP50NE10 AN1377 EFD30 ID12

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Q - 50A - TO-220 _STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE1OL Voss R D S o n Id 100 V <0.025 Î2 50 A . TYPICAL R d s (oii) = 0.020 Q m EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10L O-220 STP50NE1OL

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10 N -CHANNEL 100V -0.021 £2- 50A TO-220 STripFET POWER MOSFET TYPE S T P 50 N E 1 0 . . . . . V dss 100 V R d S o Id ii < 0 .0 2 7 Q. 50 A TYPICAL R D S (on) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10 O-220

    ym 238

    Abstract: No abstract text available
    Text: STP50NE10 N - CHANNEL 100V - 0.021Q - 50A - D2PAK STripFET POWER MOSFET TYPE S TP 50N E10 V dss RDS on Id 1 00 V <0.027 Q 50 A TYPICAL Ftos(on) = 0.021 Q m EXCEPTIONALdv/dt CAPABILITY . . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C . APPLICATION ORIENTED


    OCR Scan     		PDF STP50NE10 ym 238

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10 N - CHANNEL 100V - 0.021 Q - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10 Voss R D S o n Id 100 V < 0 .0 2 7 Î2 50 A . TYPICAL R d s ( o ii ) = 0.021 Q m EXCEPTIONAL dv/dt CAPABILITY . . . 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10 O-220

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020ft - 50A - TO-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE S TP 50N E 10L . . . . . V dss R dS oii Id 100 V <0.025 a 50 A TYPICAL RDS(on) = 0.020 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10L 020ft O-220

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Q - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10L Voss R D S o n Id 100 V < 0 .0 2 5 Î2 50 A . TYPICAL R d s ( o ii ) = 0.020 Q m EXCEPTIONAL dv/dt CAPABILITY . . . 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10L O-220