Gan hemt transistor RFMD
Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933
Text: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz
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GaN ADS
Abstract: GaN amplifier 120W transistor hemt RF393x
Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,
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RF393x
900MHz
220mA)
220mA,
RF3934
440mA)
900MHz)
GaN ADS
GaN amplifier 120W
transistor hemt
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B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C105I2D
/-10MHz
45dBm
/-10MHz
B4846
S21 Package
GRM188B11H102KA01D
CS3376C
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Untitled
Abstract: No abstract text available
Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C160I2D
14GHz
25deg
/-10MHz
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mar 827
Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
/-10MHz
mar 827
210w AF Power Amplifier
CS3376C
ATC100B
JESD22-A114
TZY2Z010A001
MURATA GRM55ER72A475K
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EKZE101
Abstract: No abstract text available
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C210I2D
/-10MHz
48dBm
/-10MHz
EKZE101
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Untitled
Abstract: No abstract text available
Text: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 17dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C105I2D
25deg
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EKZE101
Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C105I2D
14GHz
14GHz
/-10MHz
45dBm
EKZE101
GaN amplifier 100W
GRM55ER72A475K
grm188b11h102ka01d
105w
ATC100B
Soshin
JESD22-A114
MCR18
TZY2Z010A001
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Gan hemt transistor RFMD
Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
Text: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron
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RF393x
RF3933
RF3934
Gan hemt transistor RFMD
RF3932
HIGH POWER TRANSISTOR
Gan transistor
rf3931
RF3930
GaN amplifier
RF3933
RF3934
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GaN amplifier 100W
Abstract: class h amplifier 100w ZHL-100W-GAN ZHL-100W-GANX rf power amplifier 100w fm amplifier 100w rf amplifier 100w GaN 100 watt BT1165 amplifier mini-circuits
Text: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9
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ZHL-100W-GAN+
ZHL-100W-GANX+
GaN amplifier 100W
class h amplifier 100w
ZHL-100W-GAN
ZHL-100W-GANX
rf power amplifier 100w
fm amplifier 100w
rf amplifier 100w
GaN 100 watt
BT1165
amplifier mini-circuits
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GaN 100 watt
Abstract: rf amplifier 100w ZHL-100W-GANX
Text: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9
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ZHL-100W-GAN+
ZHL-100W-GANX+
GaN 100 watt
rf amplifier 100w
ZHL-100W-GANX
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Untitled
Abstract: No abstract text available
Text: September 30, 2014 MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size 85 Wpk GaN Hybrid Amplifier, MAMG-002735-085L0L, offers integrated, fully matched SMT solution
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MAPG-002729-350L00,
MAMG-002735-085L0L,
MAMG-002735-030L0L,
com/multimedia/home/20140930005146/en/
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Untitled
Abstract: No abstract text available
Text: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C020MK
60GHz
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RF565-2
Abstract: 440 transistors
Text: RFMD. High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high-power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high-power density
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RF565-2
RF56age
50-operation
440 transistors
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egn21c020mk
Abstract: MTTF JESD22-A114 EGN21
Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C020MK
14GHz
egn21c020mk
MTTF
JESD22-A114
EGN21
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EGN26C030MK
Abstract: No abstract text available
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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60GHz
EGN26C030MK
-j100
EGN26C030MK
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Untitled
Abstract: No abstract text available
Text: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 16.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C030MK
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Untitled
Abstract: No abstract text available
Text: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 19dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C030MK
14GHz
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EGN35C030MK
Abstract: JESD22-A114 1581-4 2S110
Text: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 16.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C030MK
EGN35C030MK
JESD22-A114
1581-4
2S110
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Untitled
Abstract: No abstract text available
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C030MK
60GHz
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Untitled
Abstract: No abstract text available
Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 19dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C020MK
14GHz
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60Ghz
Abstract: JESD22-A114 egn26c020mk
Text: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C020MK
60GHz
60Ghz
JESD22-A114
egn26c020mk
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Untitled
Abstract: No abstract text available
Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C020MK
-j100
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Untitled
Abstract: No abstract text available
Text: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C030MK
-j100
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