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    105w

    Abstract: EGN26C105I2D 60Ghz 60GHz transistor
    Text: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.3dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 17dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C105I2D 400mA 60GHz 105w EGN26C105I2D 60Ghz 60GHz transistor

    Untitled

    Abstract: No abstract text available
    Text: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 17dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C105I2D 25deg

    Untitled

    Abstract: No abstract text available
    Text: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.3dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 17dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C105I2D 400mA 60GHz