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    GAAS MESFET APPLICATION NOTE Search Results

    GAAS MESFET APPLICATION NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TSL1401CCS-RL2 Rochester Electronics TSL1401 - 128 x 1 Linear Sensor Array with hold. Please note, an MOQ and OM of 250 pcs applies. Visit Rochester Electronics Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy

    GAAS MESFET APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3906 PNP TRANSISTOR

    Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
    Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET


    Original     		PDF AN-0002 3906 PNP TRANSISTOR irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation

    GaAs MESFET amplifier

    Abstract: MAX4473 AN1800 APP1800 bias of GaAs MESFET MESFET Application
    Text: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect transistors Dec 04, 2002 APPLICATION NOTE 1800 Smart IC Maintains Uniform Bias Current For GaAs MESFETs


    Original     		PDF com/an1800 MAX4473: AN1800, APP1800, Appnote1800, GaAs MESFET amplifier MAX4473 AN1800 APP1800 bias of GaAs MESFET MESFET Application

    AG101

    Abstract: No abstract text available
    Text: The Communications Edge TM Application Note Product Information AG101 Temperature Effects on Reliability The AG101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs


    Original     		PDF AG101 beh1000 1-800-WJ1-4401

    wj 75

    Abstract: AG101 power amplifier mmic
    Text: The Communications Edge TM Application Note Product Information AM1 Temperature Effects on Reliability The AM1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs


    Original     		PDF 1-800-WJ1-4401 wj 75 AG101 power amplifier mmic

    AH101

    Abstract: wj 75 AG101 AH102 AH11 Characteristic of mesfet mmic ah1
    Text: The Communications Edge TM Application Note Product Information AH101 Temperature Effects on Reliability AH102 Included by Similarity The AH101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs


    Original     		PDF AH101 AH102 1-800-WJ1-4401 wj 75 AG101 AH11 Characteristic of mesfet mmic ah1

    C1027

    Abstract: transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018
    Text: Application Note RFS1006-AN1 Application Note for RFS1006 Evaluation Board Power Sequencing The RFS1006 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF


    Original     		PDF RFS1006-AN1 RFS1006 J1004 C1027 transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018

    wj 75

    Abstract: c 596 AG101 AH11 AH22 AH1-1
    Text: The Communications Edge TM Application Note Product Information AH11 Temperature Effects on Reliability AH22 Included by Similarity The AH11 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs


    Original     		PDF de1000 1-800-WJ1-4401 wj 75 c 596 AG101 AH11 AH22 AH1-1

    RFS1003

    Abstract: No abstract text available
    Text: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF


    Original     		PDF RFS1003-AN1 RFS1003

    WJ Communications, AH1

    Abstract: ah1 fet mmic ah1 linear MTBF WJ 59
    Text: The Communications Edge TM Application Note Product Information AH1 Temperature Effects on Reliability AH2 and AH3 Included by Similarity The AH1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s product for more than 15 years. Extensive life testing and field history of our GaAs products have demonstrated


    Original     		PDF 1-800-WJ1-4401 WJ Communications, AH1 ah1 fet mmic ah1 linear MTBF WJ 59

    ATF54143.s2p

    Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
    Text: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency


    Original     		PDF ATF-54143 MTT-28, ATF-54143 5989-0852EN ATF54143.s2p 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF54143 atf54143 pHEMT AN-1222 BCV62C

    NE76038

    Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
    Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated


    Original     		PDF AN1015 NE76038) NE76038 uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise

    transistor 1654

    Abstract: RFS1003 RF Solutions
    Text: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF connectors for proper connection. Proper power up and power


    Original     		PDF RFS1003-AN1 RFS1003 ext4741 DRFS-1003-0AN1 transistor 1654 RF Solutions

    CLX30

    Abstract: CLX30-00 CLX30-05 CLX30-10
    Text: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLX30 CLX30-00 MWP-25 CLX30-05 CLX30-10 CLX30-nn: QS9000 CLX30 CLX30-00 CLX30-05 CLX30-10

    CLX34

    Abstract: CLX34-00 CLX34-05 CLX34-10
    Text: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLX34 CLX34-00 MWP-25 CLX34-05 CLX34-10 CLX34-nn: QS9000 CLX34 CLX34-00 CLX34-05 CLX34-10

    CLY38

    Abstract: CLY38-00 CLY38-05 CLY38-10
    Text: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY38 CLY38-00 MWP-35 CLY38-05 CLY38-10 CLY38-nn: QS9000 CLY38 CLY38-00 CLY38-05 CLY38-10

    CLY32

    Abstract: CLY32-00 CLY32-05 CLY32-10
    Text: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY32 CLY32-00 MWP-25 CLY32-05 CLY32-10 CLY32-nn: QS9000 CLY32 CLY32-00 CLY32-05 CLY32-10

    CLX32

    Abstract: CLX32-00 CLX32-05 CLX32-10
    Text: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLX32 CLX32-00 MWP-25 CLX32-05 CLX32-10 CLX32-nn: QS9000 CLX32 CLX32-00 CLX32-05 CLX32-10

    CLX27

    Abstract: CLX27-00 CLX27-05 CLX27-10
    Text: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLX27 CLX27-00 MWP-25 CLX27-05 CLX27-10 CLX27-nn: QS9000 CLX27 CLX27-00 CLX27-05 CLX27-10

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10
    Text: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY29 CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29-nn: QS9000 CLY29 CLY29-00 CLY29-05 CLY29-10

    296K

    Abstract: GaAs MESFET amplifier MESFET Application MAX4473 GaAs MesFET Application note MESFET
    Text: AMPLIFIER AND COMPARATOR CIRCUITS Application Note 1800: Dec 04, 2002 Smart IC Maintains Uniform Bias Current For GaAs MESFETs A current sensor that monitors the drain-source current IDS at the source of the MESFET and provides feedback to the gate input overcoming the drawbacks of gateturn-on threshold voltage variations for gallium-arsenide metal-semiconductor fieldeffect transistors, GaAs MESFETs.


    Original     		PDF MAX4473: com/an1800 296K GaAs MESFET amplifier MESFET Application MAX4473 GaAs MesFET Application note MESFET

    CLX34

    Abstract: CLX34-00 CLX34-05 CLX34-10
    Text: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • • • Low thermal resistance for high voltage application


    Original     		PDF CLX34 CLX34-00 CLX34-05 MWP-25 CLX34-10 CLX34-nn: QS9000 CLX34 CLX34-00 CLX34-05 CLX34-10

    CLY35

    Abstract: CLY35-00 CLY35-05 CLY35-10 0244
    Text: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application


    Original     		PDF CLY35 CLY35-00 MWP-35 CLY35-05 CLY35-10 CLY35-nn: QS9000 CLY35 CLY35-00 CLY35-05 CLY35-10 0244

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS’ 0.5 pm GaAs MESFET


    OCR Scan     		PDF pp472-476

    M517

    Abstract: MASW6010 54LS04 MESFET
    Text: Application Note MASW6010* GaAs SPDT MMIC Switch Performance and Driver Circuit Techniques MMIC SPDT Switch Design MASW6010 RF The MASW6010 is based on the use of MetalSemiconductor Field Effect Transistors MESFET as the active elements. As shown in the schematic of Figure la,


    OCR Scan     		PDF MASW6010* MASW6010 MC10H350. MC10H350 IN4148. M517 54LS04 MESFET