MASW6010G
Abstract: No abstract text available
Text: MASW6010G GaAs SPDT Switch DC - 6.0 GHz Rev. V6 Features Pad Layout • Low Insertion Loss: 0.5 dB Typical @ 4 GHz • Fast Switching Speed: 4 ns Typical • Ultra Low DC Power Consumption Description M/A-COM Technology’s MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small
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GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
Abstract: MASW6010G
Text: GaAs SPDT Switch DC - 6.0 GHz MASW6010G V4 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 ns Typical Ultra Low DC Power Consumption Integral Static Protection RFC GND GND RF1 RF2 A B Description M/A-COM’s MASW6010G
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MASW6010G
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
MASW6010G
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Abstract: No abstract text available
Text: GaAs SPDT Switch, DC - 6.0 GHz MASW6010G V3 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 ns Typical Ultra Low DC Power Consumption Integral Static Protection RFC GND GND RF1 RF2 A B Description M/A-COM’s MASW6010G
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MASW6010G
Abstract: No abstract text available
Text: GaAs SPDT Switch DC - 6.0 GHz MASW6010G V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption Integral Static Protection Description M/A-COM’s MASW6010G is an SPDT GaAs
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MASW6010
Abstract: MASW6010G
Text: GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* @25°C* Frequency Range DC - 6000
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MASW6010G
MASW6010
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MASW6010G
Abstract: No abstract text available
Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents GaAs SPDT Switch DC - 6.0 GHz MASW6010G V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption
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GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
Abstract: MASW6010G
Text: MASW6010G V GaAs SPDT Switch DC - 6.0 GHz Rev. V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption Integral Static Protection Description M/A-COM’s MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It
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GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
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DM74SL04
Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Text: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs
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S2079
SW-109
SWD-119
SW-394
SW-399
OT-26
SW-205
SW-206
SW-215
SW-216
DM74SL04
IC DM74LS04
SW109
SW SPDT
fairchild m539
SW-3951
ttl and cmos digital ic
sw-419
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Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
Abstract: SW-210 mmic A MASW6010G MASW6020G SW-200
Text: Techniques to Achieve High Isolation with GaAs MMIC Switch Chips Mounting Techniques 1. Mount the base of the chip directly on the ground plane i.e. the metal floor of the package and use short connections from the ground pads of the MMIC to the ground plane.
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SW-200
MASW6020G
SW-210.
Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
SW-210
mmic A
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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Drivers for GaAs FET Switches and Digital Attenuators
Abstract: SW SPDT rf attenuator 349 SW-109 ttl and cmos digital ic DC bias of gaas FET IC DM74LS04 DM74SL04 motorola diode 8296 SW-437
Text: Drivers for GaAs FET Switches and Digital Attenuators S2079 V4 Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application
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S2079
SW-109
SWD-119
Drivers for GaAs FET Switches and Digital Attenuators
SW SPDT
rf attenuator 349
ttl and cmos digital ic
DC bias of gaas FET
IC DM74LS04
DM74SL04
motorola diode 8296
SW-437
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PH1819-60
Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies
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SPDT FETs
Abstract: DR65-0001 SWD-119 small signal GaAs FET SW SPDT AT-220 MASW4030G MASW6010G SW-313 SWD-109
Text: An ASIC Driver for GaAs FET Control Components This application note covers driver selection and circuit design for FET switches and attenuators, including non-linear performance as Vopt is varied By Christopher Weigand M/A-COM, Inc. he use of a plastic packaged ASIC driver
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SWD-109)
SWD-119
DR65-0001)
SPDT FETs
DR65-0001
small signal GaAs FET
SW SPDT
AT-220
MASW4030G
MASW6010G
SW-313
SWD-109
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MAAM-008863
Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America
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40W267
MAAM-008863
MAMU-009156
transistor MY52
200W MOSFET POWER AMP
transistor MY51
GPS Antenna AT65
MA4ST350
MADR-007690-DR0002
a74 sot-89
SM4T mixer
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Untitled
Abstract: No abstract text available
Text: « liM P A M V W iy GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* @25°C * * * Frequency Range
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Untitled
Abstract: No abstract text available
Text: M an A M P com pany GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ L ow I n s e r t io n Loss, 0.5 d B T y p ic a l @ 4 G H z Fast S w itc h in g S p e e d , 4 n s T yp ical Ultra Low DC P o w e r C o n s u m p t i o n Integ ra l Static P ro te c tio n
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Untitled
Abstract: No abstract text available
Text: jy t e c c m GaAs SPDT Switch D C -6 GHz • ■ ■ ■ MASW6010G Low Insertion Loss, 0.5 dB Typical Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* @25°C*
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M517
Abstract: MASW6010 54LS04 MESFET
Text: Application Note MASW6010* GaAs SPDT MMIC Switch Performance and Driver Circuit Techniques MMIC SPDT Switch Design MASW6010 RF The MASW6010 is based on the use of MetalSemiconductor Field Effect Transistors MESFET as the active elements. As shown in the schematic of Figure la,
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MASW6010*
MASW6010
MC10H350.
MC10H350
IN4148.
M517
54LS04
MESFET
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M517
Abstract: No abstract text available
Text: MMIC Based Components Application Notes Application Page Note Title M515 Techniques to Achieve High Isolation 1-214 With GaAs MMIC Switch C h ip s. 1-215 MASW6020 Configuration Guide.
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MASW6020
MASW6010
SW-239
SW-419
AT-210
AT-23.
AT-230
M517
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