DM74SL04
Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Text: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs
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S2079
SW-109
SWD-119
SW-394
SW-399
OT-26
SW-205
SW-206
SW-215
SW-216
DM74SL04
IC DM74LS04
SW109
SW SPDT
fairchild m539
SW-3951
ttl and cmos digital ic
sw-419
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smd C1D
Abstract: marking code C1d SMD l0131 datasheet ic 4060 Q62702-L0132 BGV503 BGV903 marking c2d GPS09230 negative voltage regulator ic
Text: GaAs Support IC BGV503 / BGV903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV503, BGV903 – for cellular phones • BGV503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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BGV503
BGV903
BGV503,
BGV503:
BGV903:
BGV503)
BGV903)
P-TSSOP-10-2
smd C1D
marking code C1d SMD
l0131
datasheet ic 4060
Q62702-L0132
BGV903
marking c2d
GPS09230
negative voltage regulator ic
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Untitled
Abstract: No abstract text available
Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with
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A17113
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Untitled
Abstract: No abstract text available
Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with
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A17113
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C01A
Abstract: GaAs p-i-n diodes a1711
Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with
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MGPN0515-C12
MGPN0518-C12
MGPN1506-C12
MGPN1504-C01A
MGPN1503-C01A
A17111
C01A
GaAs p-i-n diodes
a1711
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This
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MC33169/D
MC33169
MC33169
MC33169/D*
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rfsw2045
Abstract: RFSW2045DC RFSW2045D RFSW-2045
Text: RFSW2045 RFSW2045DC to 16 Ghz SP4T pHEMT GaAs Switch DC TO 16GHz SP4T pHEMT GaAs SWITCH Package: QFN, 24 pin, 0.8mmx4mmx4mm GND 6 Features Low Insertion Loss: 2.4dB at 16GHz High Isolation: 38dB at 16GHz 21nS Switching Speed GaAs pHEMT Technology
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RFSW2045DC
RFSW2045
16GHz
RFSW2045
DS110107
RFSW2045D
RFSW-2045
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Untitled
Abstract: No abstract text available
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-2
GPS09230
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marking code C1d SMD
Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-1
GPS09184
marking code C1d SMD
smd C1D
Q62702-L0131
Q62702-L0132
marking bgv
P-TSSOP-10-1
5v regulator
c2pr
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Untitled
Abstract: No abstract text available
Text: RFSW2041 RFSW2041DC to 20Ghz SPDT pHEMT GaAs Switch DC TO 20GHz SPDT pHEMT GaAs SWITCH Package: QFN, 16-pin, 0.8mm x 3mm x 3mm 1 Features Low Insertion Loss: 1.7dB at 20GHz High Isolation: 38dB at 20GHz 20nS Switching Speed GaAs pHEMT Technology
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RFSW2041
RFSW2041DC
20Ghz
16-pin,
20GHz
RFSW2041
pro041
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marking code C1d SMD
Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-1
GPS09184
marking code C1d SMD
smd C1D
lowpassfilter
marking bgv
MARKING CODE SMD IC 503
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Drivers for GaAs FET Switches and Digital Attenuators
Abstract: SW SPDT rf attenuator 349 SW-109 ttl and cmos digital ic DC bias of gaas FET IC DM74LS04 DM74SL04 motorola diode 8296 SW-437
Text: Drivers for GaAs FET Switches and Digital Attenuators S2079 V4 Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application
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S2079
SW-109
SWD-119
Drivers for GaAs FET Switches and Digital Attenuators
SW SPDT
rf attenuator 349
ttl and cmos digital ic
DC bias of gaas FET
IC DM74LS04
DM74SL04
motorola diode 8296
SW-437
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reflective switch 5ghz
Abstract: RFSW2045
Text: RFSW2045 RFSW2045DC to 16Ghz SP4T pHEMT GaAs Switch DC TO 16GHz SP4T pHEMT GaAs SWITCH Package: QFN, 24 pin, 0.8mm x 4mm x 4mm GND 6 Features Low Insertion Loss: 2.4dB at 16GHz High Isolation: 38dB at 16GHz 21ns Switching Speed GaAs pHEMT Technology
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RFSW2045DC
16Ghz
RFSW2045
RFSW2045
DS120530
reflective switch 5ghz
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NJG1635AHB6
Abstract: NJG1635
Text: NJG1635AHB6 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1635AHB6 is a GaAs SPDT switch IC suited for mobile handset, WiBro and WiMAX devices. This switch features high power handling, low insertion loss, high isolation. This switch includes logic decoder function, and can be operated by
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NJG1635AHB6
NJG1635AHB6
30dBm,
NJG1635
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Untitled
Abstract: No abstract text available
Text: NJG1635AHB6 SPDT SWITCH GaAs MMIC • GENERAL DESCRIPTION NJG1635AHB6 is a GaAs SPDT switch IC suited for mobile handset, WiBro and WiMAX devices. This switch features high power handling, low insertion loss, high isolation. This switch includes logic decoder function, and can be operated by
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NJG1635AHB6
NJG1635AHB6
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Untitled
Abstract: No abstract text available
Text: NJG1535HD3 SPDT SWITCH GaAs MMIC • GENERAL DESCRIPTION NJG1535HD3 is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features high power, low loss, high isolation and the low switch current. This device includes logic decoder function, and can be
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NJG1535HD3
USB10-D3
NJG1535HD3
36dBm
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GaAs SPDT IC FET
Abstract: SW-239TR MESFET Application
Text: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon able that operate to 3 GH z as analog attenuators, digital attenuators
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ATC100A
AT-210/AT-220
GaAs SPDT IC FET
SW-239TR
MESFET Application
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TL272
Abstract: MRFIC0903R2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0903 Broadband GaAs Sw itch The MRFIC0903 is an integrated GaAs SPDT switch designed for transceivers operating in the 100 MHz to 2.0 GHz frequency range. The design utilizes Motorola’s advanced GaAs RF process to yield superior performance in
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MRFIC0903
DCS1800,
DCS1900,
NMT900;
MRFIC0903
TL272
MRFIC0903R2
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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gaas fet marking AR
Abstract: No abstract text available
Text: Infineon tei hnoiosi*» GaAs Support 1C BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
111111i
gaas fet marking AR
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Nippon capacitors
Abstract: No abstract text available
Text: O rder this docum ent by M C33169/D MOTOROLA Advance Information GaAs POWER AMPLIFIER SUPPORT IC GaAs Power Am plifier Support 1C SEMICONDUCTOR TECHNICAL DATA The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This
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C33169/D
MC33169
DCS1800
1PHX36012-0
MC33169/D
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: TOSHIBA UNDER DEVELOPM ENT PRELIM INARY TLP3113 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP31 1 3 M EASURING HIGH-FREQUENCY EQUIPMENT HIGH-SPEED LOGIC IC TESTERS HIGH-SPEED M EM O R Y TESTERS The TLP3113 consists of a GaAs infrared emitting diode optically
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TLP3113
TLP31
TLP3113
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP3540 MEMORY TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared em itting diode optically coupled to a photo-MOSFET in a 8-pin DIP package
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TLP3540
TLP3540
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mc331694
Abstract: Voltage Doubler application mc3316940 RF switch negative voltage generator
Text: 8 < MOTOROLA > MC33169 A dvance Inform ation GaAs Power Amplifier Support 1C GaAs POWER AMPLIFIER SUPPORT IC The M C33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM- PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs
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MC33169
C33169
DCS1800
MRFIC0913,
MC33169
mc331694
Voltage Doubler application
mc3316940
RF switch negative voltage generator
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