Untitled
Abstract: No abstract text available
Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for
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MEST2GFC-10-25
26X12
A17111
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Untitled
Abstract: No abstract text available
Text: MEST2GFC-010-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for
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MEST2GFC-010-25
26X12
A17111
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a1711
Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
Text: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance
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ATP114
ENA1711
4000pF
A1711-4/4
a1711
A1711-2
ENA1711
ATP114
A1711-1
A1711-3
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C01A
Abstract: GaAs p-i-n diodes a1711
Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with
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MGPN0515-C12
MGPN0518-C12
MGPN1506-C12
MGPN1504-C01A
MGPN1503-C01A
A17111
C01A
GaAs p-i-n diodes
a1711
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A1711
Abstract: No abstract text available
Text: Ordering number : ENA1711A ATP114 P-Channel Power MOSFET http://onsemi.com –60V, –55A, 16mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.) Halogen free compliance
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ENA1711A
ATP114
4000pF
PW10s)
PW10s,
--15V,
--28Aere
A1711-7/7
A1711
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A1711
Abstract: ATP114 A17113 A1711-2 A1711-3
Text: ATP114 注文コード No. N A 1 7 1 1 三洋半導体データシート N ATP114 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=12mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4000pF(typ.)
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ATP114
4000pF
IT15710
IT15512
A1711-3/4
IT15513
A1711
ATP114
A17113
A1711-2
A1711-3
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Untitled
Abstract: No abstract text available
Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for
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Original
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MEST2GFC-10-25
26X12
A17111
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PDF
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Untitled
Abstract: No abstract text available
Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for
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Original
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MEST2GFC-10-25
26X12
A17111
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PDF
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Untitled
Abstract: No abstract text available
Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for
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Original
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MEST2GFC-10-25
26X12
A17111
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PDF
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A1711
Abstract: A1711-3
Text: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance
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Original
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ENA1711
ATP114
4000pF
PW10s)
PW10s,
A1711-4/4
A1711
A1711-3
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PDF
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Untitled
Abstract: No abstract text available
Text: ATP114 Ordering number : ENA1711A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.)
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Original
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ATP114
ENA1711A
4000pF
A1711-7/7
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PDF
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Untitled
Abstract: No abstract text available
Text: ATP114 Ordering number : ENA1711A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.)
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Original
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ATP114
ENA1711A
4000pF
15etc.
A1711-7/7
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