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    Nisshinbo Micro Devices NJG1635AHB6-TE1

    RF Switch ICs GaAs SPDT 1.3V 2.7V 160mW 5.0V
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    Nisshinbo Micro Devices NJG1635HB6-TE1

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    NJG1635 Datasheets Context Search

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    NJG1635

    Abstract: NJG1635AHB6
    Text: NJG1635AHB6 SPDT スイッチ GaAs MMIC •概要 ■外形 NJG1635AHB6 は携帯電話WiBro および WiMAX 機器に最適 なハイパワーSPDT スイッチです。高パワーハンドリング、低挿 入損失、高アイソレーションを特徴とします。


    Original     		PDF NJG1635AHB6 NJG1635AHB6 30dBm, 32dBm NJG1635

    NJG1635AHB6

    Abstract: NJG1635
    Text: NJG1635AHB6 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1635AHB6 is a GaAs SPDT switch IC suited for mobile handset, WiBro and WiMAX devices. This switch features high power handling, low insertion loss, high isolation. This switch includes logic decoder function, and can be operated by


    Original     		PDF NJG1635AHB6 NJG1635AHB6 30dBm, NJG1635

    NJG1635HB6

    Abstract: No abstract text available
    Text: NJG1635HB6 SPDT スイッチ GaAs MMIC •概要 ■外形 NJG1635HB6 は移動体通信端末に最適なハイパワーSPDT スイ ッチであり高パワーハンドリング、低損失、高アイソレーショ ンを特徴とします。 本スイッチ IC は 1 ビットの入力制御信号により 1.3V からの低


    Original     		PDF NJG1635HB6 NJG1635HB6 30dBm, 1000pF GRM15)

    NJG1635HB6

    Abstract: murata dd V8026
    Text: NJG1635HB6 SPDT SWITCH GaAs MMIC ! GENERAL DESCRIPTION NJG1635HB6 is a GaAs SPDT switch IC suited for antenna switch of cellular phone. This switch has many features such as high power handling, low insertion loss, high isolation and low operating current.


    Original     		PDF NJG1635HB6 NJG1635HB6 30dBm, 30dBm murata dd V8026

    Untitled

    Abstract: No abstract text available
    Text: NJG1635AHB6 SPDT SWITCH GaAs MMIC • GENERAL DESCRIPTION NJG1635AHB6 is a GaAs SPDT switch IC suited for mobile handset, WiBro and WiMAX devices. This switch features high power handling, low insertion loss, high isolation. This switch includes logic decoder function, and can be operated by


    Original     		PDF NJG1635AHB6 NJG1635AHB6