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    GA200 Search Results

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    GA200 Price and Stock

    Kyocera AVX Components CX3225GA20000D0PTVCC

    CRYSTAL 20.0000MHZ 8PF SMD
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    DigiKey CX3225GA20000D0PTVCC Cut Tape 1,876 1
    • 1 $0.91
    • 10 $0.805
    • 100 $0.6654
    • 1000 $0.5253
    • 10000 $0.5253
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    Mouser Electronics CX3225GA20000D0PTVCC 1,470
    • 1 $0.88
    • 10 $0.781
    • 100 $0.645
    • 1000 $0.509
    • 10000 $0.458
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    OptiFuse MGGA-200A-B

    FUSE AUTO 200A 32VDC AUTO LINK
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    DigiKey MGGA-200A-B Bulk 1,560 1
    • 1 $4.45
    • 10 $4.291
    • 100 $2.659
    • 1000 $2.05
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    ams OSRAM Group EGA2000-850-W (500 PCS/REEL PACKING)

    EGA2000-850-W (500 PCS/REEL PACK
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    DigiKey EGA2000-850-W (500 PCS/REEL PACKING) Reel 1,000 500
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    • 1000 $7.06846
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    ams OSRAM Group EGA2000-850-N (500 PCS/REEL PACKING)

    EGA2000-850-N (500 PCS/REEL PACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EGA2000-850-N (500 PCS/REEL PACKING) Reel 500 500
    • 1 -
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    • 1000 $7.06846
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    EGA2000-850-N (500 PCS/REEL PACKING) Cut Tape 217 1
    • 1 $12.86
    • 10 $9.702
    • 100 $8.1495
    • 1000 $8.1495
    • 10000 $8.1495
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    ams OSRAM Group EGA2000-850-UW (500 PCS/REEL PACKING)

    EGA2000-850-UW (500 PCS/REEL PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EGA2000-850-UW (500 PCS/REEL PACKING) Cut Tape 489 1
    • 1 $12.86
    • 10 $9.702
    • 100 $8.1495
    • 1000 $8.1495
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    Find more GA200 price and stock on Findchips.com

    GA200 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GA200 Microsemi SCRs Nanosecond Switching Planar Scan PDF
    GA200 Microsemi SCR Nanosecond Switching, Planar Scan PDF
    GA200 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    GA200 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    GA200 Unitrode International Semiconductor Data Book 1981 Scan PDF
    GA200-001PD Leader Electronic PCB Mounted Pressure Transducer Original PDF
    GA200-001PD Measurement Specialties Pressure Sensors, Transducers, Sensors, Transducers, SENSOR TRANSDUCER 0.250-4.5V PCB Original PDF
    GA200-001PD Measurement Specialties Interface Misc, PCB Mounted Pressure Transducers Original PDF
    GA200001PD Schaevitz Sensors Pressure Sensor, Transducer, 0 to 1psi Range Original PDF
    GA200-005WD Leader Electronic PCB Mounted Pressure Transducer Original PDF
    GA200-005WD Measurement Specialties Pressure Sensors, Transducers, Sensors, Transducers, SENSOR PRESS GAUGE 5" H2O 3SIP Original PDF
    GA200-005WD Measurement Specialties Interface Misc, PCB Mounted Pressure Transducers Original PDF
    GA200005WD Schaevitz Sensors Pressure Sensor, Transducer, 0 to 0.1805psi Range Original PDF
    GA200-010WD Measurement Specialties Pressure Sensors, Transducers, Sensors, Transducers, SENSOR PRESS DIFF 10" H2O 3SIP Original PDF
    GA200-010WD Measurement Specialties Interface Misc, PCB Mounted Pressure Transducers Original PDF
    GA200010WD Schaevitz Sensors Pressure Sensor, Transducer, 0 to 0.361psi Range Original PDF
    GA200-015WD Leader Electronic PCB Mounted Pressure Transducer Original PDF
    GA200-015WD Measurement Specialties Pressure Sensors, Transducers, Sensors, Transducers, SENSOR PRESS GAUGE 15" H2O 3SIP Original PDF
    GA200-015WD Measurement Specialties Interface Misc, PCB Mounted Pressure Transducers Original PDF
    GA200015WD Schaevitz Sensors Pressure Sensor, Transducer, 0 to 0.5415psi Range Original PDF

    GA200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GA200SA60SP

    Abstract: No abstract text available
    Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC


    Original     		PDF I27235 GA200SA60SP OT-227 OT-227 GA200SA60SP

    GA200HS60S1PbF

    Abstract: No abstract text available
    Text: Bulletin I27305 01/07 GA200HS60S1PbF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses


    Original     		PDF I27305 GA200HS60S1PbF 08-Mar-07 GA200HS60S1PbF

    Untitled

    Abstract: No abstract text available
    Text: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package


    Original     		PDF GA200HS60S1PbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF -50066A GA200SA60U 20kHz 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available


    Original     		PDF VS-GA250SA60S VS-GA200SA60SP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    ga200sa60up

    Abstract: N-CHANNEL INSULATED GATE TYPE
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP 2002/95/EC OT-227 18-Jul-08 ga200sa60up N-CHANNEL INSULATED GATE TYPE

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP

    E78996 datasheet bridge

    Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200TS60UPbF E78996 2002/95/EC 18-Jul-08 E78996 datasheet bridge E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF

    GA200TS60U

    Abstract: No abstract text available
    Text: PD -5.058 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA200TS60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200TS60U GA200TS60U

    Untitled

    Abstract: No abstract text available
    Text: VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES • High short circuit capability • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C


    Original     		PDF VS-GA200TH60S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GA200HS60S1

    Abstract: 30EPH06 tig welding machine
    Text: Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package


    Original     		PDF I27222 GA200HS60S1 GA200HS60S1 30EPH06 tig welding machine

    e789

    Abstract: ic 3020
    Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 e789 ic 3020

    GA200SA60UP

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 18-Jul-08 GA200SA60UP

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200TS60UPbF E78996 2002/95/EC 11-Mar-11

    GA200HS60S1

    Abstract: tig welding machine 30EPH06
    Text: Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package


    Original     		PDF I27222 GA200HS60S1 12-Mar-07 GA200HS60S1 tig welding machine 30EPH06

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    VS-GA200HS60S1PBF

    Abstract: No abstract text available
    Text: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package


    Original     		PDF VS-GA200HS60S1PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA200HS60S1PBF

    GA201

    Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
    Text: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level


    OCR Scan     		PDF GA200 GB200 GA200A GB200A GA201 GB201 GA201A GB201A GA/GB200 GB200 GB200A GB201 GB201A GR201A

    TE 555-1

    Abstract: 419 on 80 GA201A 2n3031 2n2031
    Text: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 JAN2N3031 JANTX2N3028


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: International I R Recti fi Gf PD - 5.061 B P R E LIM IN A R Y GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    OCR Scan     		PDF GA200TD120U

    Untitled

    Abstract: No abstract text available
    Text: International lö R R ectifi 0r PD -5.066 P R E LIM IN A R Y GA200SA60U Ultra-Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR F eatu res • U ltraFast: O p tim ize d for m inim um saturation voltage V ces = 600V a nd operating freq u en cies up to 4 0 k H z in hard


    OCR Scan     		PDF GA200SA60U