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    GA200TS60UPBF Search Results

    GA200TS60UPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA200TS60UPBF International Rectifier TRANS IGBT MODULE N-CH 600V 200A 11INT-A-PAK Original PDF

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    E78996 datasheet bridge

    Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    PDF GA200TS60UPbF E78996 2002/95/EC 18-Jul-08 E78996 datasheet bridge E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    PDF GA200TS60UPbF E78996 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses


    Original
    PDF GA200TS60UPbF 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original
    PDF GA200TS60UPbF 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    PDF GA200TS60UPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original
    PDF GA200TS60UPbF 12-Mar-07

    200A25

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses


    Original
    PDF GA200TS60UPbF 18-Jul-08 200A25

    E78996 diode

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    PDF GA200TS60UPbF E78996 2002/95/EC 11-Mar-11 E78996 diode

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    PDF GA200TS60UPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12