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    G40N6 Search Results

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    G40N6 Price and Stock

    Vishay Siliconix SIHG40N60E-GE3

    MOSFET N-CH 600V 40A TO247AC
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    DigiKey SIHG40N60E-GE3 Tube 716 1
    • 1 $6.62
    • 10 $6.62
    • 100 $4.7303
    • 1000 $3.75644
    • 10000 $3.51993
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    Rochester Electronics LLC HGTG40N60C3

    75A, 600V, N-CHANNEL IGBT
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    DigiKey HGTG40N60C3 Bulk 89 50
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    • 100 $6.07
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    Rochester Electronics LLC HGTG40N60C3R

    75A, 600V N-CHANNEL IGBT
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    DigiKey HGTG40N60C3R Bulk 45 45
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    • 100 $8.38
    • 1000 $8.38
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    onsemi HGTG40N60A4

    IGBT 600V 75A TO247-3
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    HGTG40N60A4 Tube 450
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    • 1000 $6.10727
    • 10000 $6.10727
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    Newark HGTG40N60A4 Bulk 450
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    Bristol Electronics HGTG40N60A4 2
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    New Advantage Corporation HGTG40N60A4 90 1
    • 1 -
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    • 100 $7.44
    • 1000 $7.44
    • 10000 $7.44
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    onsemi HGTG40N60B3

    IGBT 600V 70A 290W TO247
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    DigiKey HGTG40N60B3 Tube
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    Newark HGTG40N60B3 Bulk 30
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    Find more G40N6 price and stock on Findchips.com

    G40N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G40N60

    Abstract: G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812
    Text: TO-3PF Tube Packing Data TO-3PF Tube Packing Configuration: Figure 1.0 30 units per Tube Packaging Description: F G40N60UF 113 Bubble Sheet 12 Tubes per box TO-3PF parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in


    Original     		PDF G40N60UF 570x150x48 590x330x245 KA7812-AE IMSYS777 A710103105 G40N60 G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812

    40n60c3

    Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26
    Text: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E


    Original     		PDF G40N6 40n60c3 g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26

    G40N60

    Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
    Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3

    G40N60B3

    Abstract: No abstract text available
    Text: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3

    G40N60

    Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
    Text: G40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678

    G40N60

    Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
    Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGT1Y40N60C3D HGT1Y40N60C3D 150oC. TA49273. TA49063. 100ns 150oC G40N60 g40n60c3d HGTG40N60C3 RHRP3060 TA49063 TA49389

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n
    Text: G40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 LD26 RHRP3060 g40n

    HGTG40N60B3 equivalent

    Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
    Text: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060
    Text: G40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b LD26 RHRP3060

    G40N60

    Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b
    Text: G40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b

    G40N60

    Abstract: g40n60b3 g40n60b g40n60b3 igbt TA49052 HGTG40N60B3 LD26 RHRP3060 45UH
    Text: G40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package o • 70A, 600V at TC = +25 C JEDEC STYLE TO-247 • Square Switching SOA Capability E • Typical Fall Time - 160ns at +150oC C G • Short Circuit Rating


    Original     		PDF HGTG40N60B3 O-247 160ns 150oC HGTG40N60B3 150oC. G40N60 g40n60b3 g40n60b g40n60b3 igbt TA49052 LD26 RHRP3060 45UH

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g40n60b3d

    Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063
    Text: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGT1Y40N60B3D HGT1Y40N60B3D 150oC. TA49052. TA49063. g40n60b3d G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 RHRP3060 TA49063

    G40N60B3

    Abstract: G40N60
    Text: G40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. G40N60B3 1-800-4-HARRIS G40N60B3 G40N60

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273
    Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
    Text: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 LD26 RHRP3060 g40n60b

    G40N60

    Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt
    Text: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b3 igbt

    G40N60

    Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
    Text: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    OCR Scan     		PDF HGTG40N60B3 G40N60B3 1-800-4-HARRIS G40N60 g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052

    G40N60

    Abstract: g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 HGTG40N60B3 LD26 110CI
    Text: in t e G40N60B3 r r ii J a n u a ry . D ata S h eet m 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		PDF HGTG40N60B3 HGTG40N60B3 TA49052. O-247 G40N60 g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 LD26 110CI