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    G25N Search Results

    G25N Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LP5951MG-2.5/NOPB Texas Instruments Micropower 150mA Low-Dropout (LDO) CMOS Voltage Regulator 5-SC70 Visit Texas Instruments Buy
    SF Impression Pixel

    G25N Price and Stock

    Cal-Chip Electronics GMC04CG130G25NT

    CAP0402 COG 13PF 2% 25V
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    DigiKey GMC04CG130G25NT Reel 20,000 10,000
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    Cal-Chip Electronics GMC02CG180G25NT

    CAP0201 COG 18PF 2% 25V
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    DigiKey GMC02CG180G25NT Reel 15,000 15,000
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    Cal-Chip Electronics GMC02CG391G25NT

    CAP0201-COG-390PF 2% 25V
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    DigiKey GMC02CG391G25NT Reel 15,000 15,000
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    Cal-Chip Electronics GMC02CG100G25NT

    CAP0201 COG 10PF 2% 25V
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    Cal-Chip Electronics GMC02CG820G25NT

    CAP0201 COG 82PF 2% 25V
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    DigiKey GMC02CG820G25NT Reel 15,000 15,000
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    G25N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V70H

    Abstract: V30L BPF H287BSJS-4438HWD ccd bm AN3501NFBP QFH084-P-1818B V30M XO 18 CT20-18 V20-25P
    Text: ICs for VCR AN3501NFBP Luminance, chroma and linear audio signal processing IC for VCR • Overview Unit: mm 21.2±0.2 18.0±0.2 63 43 42 84 22 0.6±0.2 0.80 0.35+0.1 –0.05 Seating plane ■ Features 0.1±0.1 1.55±0.1 3.25±0.2 21 0.15+0.1 –0.05 1 1.0


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    PDF AN3501NFBP AN3501NFBP V70H V30L BPF H287BSJS-4438HWD ccd bm QFH084-P-1818B V30M XO 18 CT20-18 V20-25P

    g25n120

    Abstract: SGW25N120 PG-TO-247-3-21 G25N120 TSC
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    PDF SGW25N120 PG-TO-247-3-1 O-247AC) G25N120 PG-TO-247-3-21 SGW25N120 PG-TO-247-3-21 G25N120 TSC

    g25n120

    Abstract: IKW25N120H3 IDH15S120 igw25n120 IgW25N120H3 pspice high frequency igbt
    Text: IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation


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    PDF IDH15S120 IGW25N120H3 g25n120 IKW25N120H3 IDH15S120 igw25n120 IgW25N120H3 pspice high frequency igbt

    150 g35 capacitor

    Abstract: 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2
    Text: GAP CAPS dielectric laboratories Precision Series Capacitors for Microwave Applications Part Number G 15 BH 100 K 5 P X 10 Product Code Gap Width In Mils Case Size Test Code Material Code Termination Code Capacitance Code Voltage Rating WVDC Tolerance Code


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    PDF 030BG180 5PX20 G30BH200 G30BH220 G30BH270 G30BH300 150 g35 capacitor 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2

    V70H

    Abstract: V30L matsushita tuner vcr AN3501NFBP QFH084-P-1818B V30M an3501 ct2554 matsua tuner vcr V30H
    Text: ICs for VCR AN3501NFBP Luminance, chroma and linear audio signal processing IC for VCR • Overview Unit: mm 21.2±0.2 18.0±0.2 M Di ain sc te on na tin nc ue e/ d The AN3501NFBP is a luminance, chroma signal processing IC for VCR PAL and NTSC . It also integrates a playback equalizer and an NTSC playback circuit.


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    PDF AN3501NFBP AN3501NFBP V70H V30L matsushita tuner vcr QFH084-P-1818B V30M an3501 ct2554 matsua tuner vcr V30H

    g25n120

    Abstract: PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 sgw25n120 M/250w smps inverter circuits
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    PDF SGW25N120 SGW25N120 g25n120 PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 M/250w smps inverter circuits

    g25n120

    Abstract: No abstract text available
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    PDF SGW25N120 SGW25N120 g25n120

    Untitled

    Abstract: No abstract text available
    Text: G25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTG25N120FL2WG NGTG25N120FL2W/D

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    MIL-M-38510H

    Abstract: 30n220 LI 1806 E 151 R temic 3x 995 TL 650 ht EZ 039 LEA6 D-10 MS-016 KT 783
    Text: M H S MECHANICAL OUTLINE DICTIONARY 4 . I N D E X A R E A - ► 1 - . . . . . . PINS . PLASTIC . .3 0 0 . [H I . . . D — E — -! A •K j. J. ! £ J. eA C eB M 1 A 2 B 1 1 1 8 . 7 . 6 . e 2 e A 7 9 3 . . . 2 L 1


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    PDF

    MG20G6EL2

    Abstract: 359RGA MG30G6EL2 4a2d Burr-Brown IC data book free download MG20Q6EK1 MG25N6EK1 MG10G6EL2 2108A MG50G6EL1
    Text: - 222 N P N , ? '— ’•} y \ y • \ V y y s y tm 4 ffl/ 6 flW g % 9 £ 4 AS/ 6 flSftjêt K S H iS g EL-l 7 r x l- y JS iK c k ä f g ^ it íím íS ü t » t t 8 0R i ( 8 « S c t ) Œ 2 . A C , 1^ bT, t i l . T c=25‘C* « V CBO ¡ V CEX \ V CEO


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    PDF H-101 MG20G6EL2 359RGA MG30G6EL2 4a2d Burr-Brown IC data book free download MG20Q6EK1 MG25N6EK1 MG10G6EL2 2108A MG50G6EL1

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


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    PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    MG100g2ys1

    Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
    Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series


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    PDF EG50N2YS9* G15N2YSI MG25N2YS1 MG50N2YS1 G35Q2YSI MG25Q2YS1 MG50Q2YS1 MG25S2YS1 G25N1JS1 G50N1JS1 MG100g2ys1 mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1

    MG30G2CL3

    Abstract: MG50M2CK2 MG75H2CL1 MG25M2CK2 MG50M2YK9 MG75H2YL1A MG50G2YL1A MG25M2YK9 MG50Q2Y MG15N2YK1
    Text: - 218 — n p n , > o 9 - ' y \ v • o y : i- * 'í) l- f ''í± - F i4 Vauxnv - i n « 2 flü ü fflü g tl) asn o s CK-1 / 'W W ^ U K U . lu i. t CK-2 tu o ¡>j± o Y - V T o BI y h / H 1’ c r ) i¡'±/\ Z B1 aZ E l/ B2 32 í± 1 . T c=25 c * m % V CBO


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    PDF MG15N2 MG15N2YK1 MG25M2CK2 MG25M2YK1 H-101 MG30G2CL3 MG50M2CK2 MG75H2CL1 MG50M2YK9 MG75H2YL1A MG50G2YL1A MG25M2YK9 MG50Q2Y

    MG40S2YK1

    Abstract: MG30G2CL3 MG25M2CK2 MG50M2YK9 MG50M2CK2 MG50G2CL3 MG25M2YK9 TA8250 MG15N2YK1 MG25M2YK1
    Text: - 218 — n p n o 9 - ' y \ v • o y : i - * 'í ) l - f ''í ± - F i 4 Vauxnv , > - i n « 2 flü ü fflü g tl) a s n o s CK-1 /'WW^UKU.lui.t CK-2 tu o ¡> j± o Y - V T o BI y h / H 1’ c r ) i¡'± / \ Z B1 aZ E l/ B2 32 í± 1 . T c=25 c * V CBO


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    PDF MG15N2 MG15N2YK1 MG25M2CK2 MG25M2YK1 H-101 MG40S2YK1 MG30G2CL3 MG50M2YK9 MG50M2CK2 MG50G2CL3 MG25M2YK9 TA8250