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    FUJITSU X-BAND AMPLIFIER Search Results

    FUJITSU X-BAND AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy

    FUJITSU X-BAND AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    584 MMIC

    Abstract: fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic
    Text: FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5803X 30dBm FMM5803X FCSI0200M200 584 MMIC fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: UM 2200 power amplifier mmic
    Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz UM 2200 power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt
    Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz FUJITSU SEMICONDUCTOR phemt

    0 281 002 924

    Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: No abstract text available
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz

    FUJITSU SEMICONDUCTOR phemt

    Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 FUJITSU SEMICONDUCTOR phemt fujitsu power amplifier GHz power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: power amplifier mmic
    Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5802X FMM5802X FCSI0599M200 fujitsu power amplifier GHz power amplifier mmic

    FMM5804X

    Abstract: fujitsu power amplifier GHz
    Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology


    Original     		PDF FMM5804X FMM5804X FCSI0599M200 fujitsu power amplifier GHz

    FMM3307X

    Abstract: fujitsu x band amplifiers 100GBS 100GB
    Text: 10.0Gb/s Trans-Impedance Amplifier FMM3307X FEATURES • • • • • • High Trans-Impedance Gain Typ. 1100Ω Complementary 50Ω Outputs Low Group Delay (<18ps@10GHz) Via Hole Ground Single -5.2V Power Supply DC Feed Back Circuit DESCRIPTION The FMM3307X is a Trans-Impedance Amplifier for OC-192 applications.


    Original     		PDF FMM3307X 10GHz) FMM3307X OC-192 FCSI012002M200 fujitsu x band amplifiers 100GBS 100GB

    FMM3310X

    Abstract: No abstract text available
    Text: 10.7Gb/s Trans-Impedance Amplifier FMM3310X FEATURES • • • • • • High Trans-Impedance Gain Typ. 1200Ω Complementary 50Ω Outputs Low Group Delay (<26ps@10GHz) Via Hole Ground Single -5.2V Power Supply With DC Feed Back Circuit DESCRIPTION


    Original     		PDF FMM3310X 10GHz) FMM3310X OC-192 FCSI012002M200

    4G lte RF Transceiver

    Abstract: MB86L10A DigRF 4G RF transceiver LTE power amplifier transceiver 4G LTE lte RF Transceiver tx 2G transmitter MB86L01A lte transceiver transceiver 4G LTE
    Text: The Fujitsu 2G/3G/LTE Transceiver MB86L10A Ideal for Multimode, Multiband LTE, UMTS and EDGE Mobile Handsets Transceiver Module TCXO 3G Rx Path Tx Path 4G Rx Path Band XI ADC 3G + 4G DigRF Interfaces SYSCLKEN Band IX SWITC H SYSCLK Band I Band VI ADC Band VIII


    Original     		PDF MB86L10A MB86L10A RFT-FS-21377-05/2010 4G lte RF Transceiver DigRF 4G RF transceiver LTE power amplifier transceiver 4G LTE lte RF Transceiver tx 2G transmitter MB86L01A lte transceiver transceiver 4G LTE

    FMC1819C6-02

    Abstract: No abstract text available
    Text: FMC1819C6-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 18dBm Typ. High Gain: G-ih r = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)


    OCR Scan     		PDF FMC1819C6-02 18dBm FMC1819C6-02

    Untitled

    Abstract: No abstract text available
    Text: FMCI 718P1 -01 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-|<jB = 21dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)


    OCR Scan     		PDF 718P1 21dBm FMC1718P1-01

    k-band amplifier

    Abstract: FMC2122P1-02 CLI14
    Text: FMC2I22P1-02 FUJITSU Kit, k - Batid Power GaAs Modules FEATURES • High Output Power: P 1cJB = 21dBm Typ. * High Gain: G1cjb = 12dB(Typ.) ♦ Low In/Out VSWR •Broad Band: 21.2 - 22.4GHz • Impedance Matched ZirVZout = 50Î2 ♦ Hermetically Sealed Package (12 X 15 X 3.5mm)


    OCR Scan     		PDF FMC2122P1-02 21dBm FMC2122P1-02 10dB-n -WI77T k-band amplifier CLI14

    FMM5024ML

    Abstract: No abstract text available
    Text: FMM5024ML 800MHz MMIC Driver Amplifier DESCRIPTION The FMM5024ML is a MMIC driver amplifier with gain control and is designed for applications in the 800 to 1000 MHz band. The driver amplifier includes two amplifier stages and a variable attenuator. FEATURES


    OCR Scan     		PDF FMM5024ML 800MHz FMM5024ML -55dBc FCSI0697M200

    cq 949

    Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
    Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz


    OCR Scan     		PDF FMM5802X FMM5802X FCSI0599M200 cq 949 fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053

    Untitled

    Abstract: No abstract text available
    Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1


    OCR Scan     		PDF FMM5804X FCSI0599M200

    mb3735

    Abstract: 6000 Watt audio amplifier circuit diagram VN02 50 watt audio output 10 pin sip MIKROELEKTRONIK Frankfurt
    Text: March 1990 Edition 3.0 FUJITSU DATA SHEET MB3735 BTL AUDIO POWER AMPLIFIER 20 WATT BTL AUDIO POWER AMPLIFIER WITH FILTERING CIRCUITRY FOR POWER-ON POP NOISE The Fujitsu MB3735 is designed for a low-frequency high-power amplifier with internal BTL Balanced Transformer less circuitry. The MB3735 is packed in a small plastic 9-pin Single


    OCR Scan     		PDF MB3735 MB3735 D-6000 189ft PV0071-903A3 6000 Watt audio amplifier circuit diagram VN02 50 watt audio output 10 pin sip MIKROELEKTRONIK Frankfurt

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK

    n 4113

    Abstract: No abstract text available
    Text: FUJITSU MAGNETIC DISK HEAD AMPLIFIER MB 4111 MB 4112 MB 4113 March 1984 E dition 2.0 M AGNETIC DISK HEAD A M PLIFIER The Fujitsu MB 4 1 1 1/MB 4 1 12/MB 4113 is a m onolithic bipolar integrated circuit optim ized fo r high performance application to disk head systems.


    OCR Scan     		PDF 12/MB 4111/MB interfa272 n 4113

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU Decem ber 1988 Ed itio n 3 .0 MAGNETIC DISK HEAD AMPLIFIER The Fu jitsu M B 4 1 11/M B4113 is a m onolithic bipolar integrated circu it opti­ mized fo r high performance application to disk head systems. The M B 41 1 1/M B4113 is featured w ith the follow ing four major functions to


    OCR Scan     		PDF B4113 Tempe627 MB4111 MB4113 24-PAD FPT-24C-F0T)

    Untitled

    Abstract: No abstract text available
    Text: F U JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I I MB3604 Decem ber 1987 E d itio n 1.0 HIGH FREQUENCY OPERATIONAL AMPLIFIER The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. The MB3604 has differential inputs, single-end output, and an on-chip buffer


    OCR Scan     		PDF MB3604 MB3604 16-LEAD DIP-16P-M04)

    Untitled

    Abstract: No abstract text available
    Text: ¡0 FUJITSU MICROELECTRONICS 31E D D 37 MT7ti2 Ga iS L >4 0 b HBFMI 010002850201000201000201000201020100 HIGH FREQ UENCY O PE R A TIO N A L A M P L IFIE R The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology.


    OCR Scan     		PDF MB3604 B3604 0Q15b4b T-79-07-10 16-LEAD DIP-16C-C01)

    B3604

    Abstract: No abstract text available
    Text: Aprì! 1990 Edition 2.0 FUJITSU DATA SH EET '• MB3604 HIGH FREQUENCY OPERATIONAL AMPLIFIER HIGH FREQUENCY SINGLE OPERATIONAL AMPLIFIER The Fujitsu M B3604 is a m o n o lith ic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.


    OCR Scan     		PDF MB3604 B3604 DIP-16P-M04 D-6000 PV0014-904A2