584 MMIC
Abstract: fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic
Text: FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5803X
30dBm
FMM5803X
FCSI0200M200
584 MMIC
fujitsu power amplifier GHz
fujitsu x band amplifiers
power amplifier mmic
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fujitsu power amplifier GHz
Abstract: UM 2200 power amplifier mmic
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
21-27GHz
FCSI0500M200
fujitsu power amplifier GHz
UM 2200
power amplifier mmic
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fujitsu power amplifier GHz
Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
21-27GHz
FCSI0500M200
fujitsu power amplifier GHz
FUJITSU SEMICONDUCTOR phemt
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0 281 002 924
Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5806X
26dBm
FMM5806X
FCSI0699M200
0 281 002 924
8 F 804
FUJITSU SEMICONDUCTOR phemt
power amplifier mmic
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fujitsu power amplifier GHz
Abstract: No abstract text available
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5806X
26dBm
FMM5806X
FCSI0699M200
fujitsu power amplifier GHz
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FUJITSU SEMICONDUCTOR phemt
Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5806X
26dBm
FMM5806X
FCSI0699M200
FUJITSU SEMICONDUCTOR phemt
fujitsu power amplifier GHz
power amplifier mmic
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fujitsu power amplifier GHz
Abstract: power amplifier mmic
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5802X
FMM5802X
FCSI0599M200
fujitsu power amplifier GHz
power amplifier mmic
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FMM5804X
Abstract: fujitsu power amplifier GHz
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology
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FMM5804X
FMM5804X
FCSI0599M200
fujitsu power amplifier GHz
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FMM3307X
Abstract: fujitsu x band amplifiers 100GBS 100GB
Text: 10.0Gb/s Trans-Impedance Amplifier FMM3307X FEATURES • • • • • • High Trans-Impedance Gain Typ. 1100Ω Complementary 50Ω Outputs Low Group Delay (<18ps@10GHz) Via Hole Ground Single -5.2V Power Supply DC Feed Back Circuit DESCRIPTION The FMM3307X is a Trans-Impedance Amplifier for OC-192 applications.
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FMM3307X
10GHz)
FMM3307X
OC-192
FCSI012002M200
fujitsu x band amplifiers
100GBS
100GB
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FMM3310X
Abstract: No abstract text available
Text: 10.7Gb/s Trans-Impedance Amplifier FMM3310X FEATURES • • • • • • High Trans-Impedance Gain Typ. 1200Ω Complementary 50Ω Outputs Low Group Delay (<26ps@10GHz) Via Hole Ground Single -5.2V Power Supply With DC Feed Back Circuit DESCRIPTION
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FMM3310X
10GHz)
FMM3310X
OC-192
FCSI012002M200
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4G lte RF Transceiver
Abstract: MB86L10A DigRF 4G RF transceiver LTE power amplifier transceiver 4G LTE lte RF Transceiver tx 2G transmitter MB86L01A lte transceiver transceiver 4G LTE
Text: The Fujitsu 2G/3G/LTE Transceiver MB86L10A Ideal for Multimode, Multiband LTE, UMTS and EDGE Mobile Handsets Transceiver Module TCXO 3G Rx Path Tx Path 4G Rx Path Band XI ADC 3G + 4G DigRF Interfaces SYSCLKEN Band IX SWITC H SYSCLK Band I Band VI ADC Band VIII
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MB86L10A
MB86L10A
RFT-FS-21377-05/2010
4G lte RF Transceiver
DigRF 4G
RF transceiver LTE
power amplifier transceiver 4G LTE
lte RF Transceiver
tx 2G transmitter
MB86L01A
lte transceiver
transceiver 4G LTE
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FMC1819C6-02
Abstract: No abstract text available
Text: FMC1819C6-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 18dBm Typ. High Gain: G-ih r = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1819C6-02
18dBm
FMC1819C6-02
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Untitled
Abstract: No abstract text available
Text: FMCI 718P1 -01 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-|<jB = 21dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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718P1
21dBm
FMC1718P1-01
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k-band amplifier
Abstract: FMC2122P1-02 CLI14
Text: FMC2I22P1-02 FUJITSU Kit, k - Batid Power GaAs Modules FEATURES • High Output Power: P 1cJB = 21dBm Typ. * High Gain: G1cjb = 12dB(Typ.) ♦ Low In/Out VSWR •Broad Band: 21.2 - 22.4GHz • Impedance Matched ZirVZout = 50Î2 ♦ Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2122P1-02
21dBm
FMC2122P1-02
10dB-n
-WI77T
k-band amplifier
CLI14
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FMM5024ML
Abstract: No abstract text available
Text: FMM5024ML 800MHz MMIC Driver Amplifier DESCRIPTION The FMM5024ML is a MMIC driver amplifier with gain control and is designed for applications in the 800 to 1000 MHz band. The driver amplifier includes two amplifier stages and a variable attenuator. FEATURES
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FMM5024ML
800MHz
FMM5024ML
-55dBc
FCSI0697M200
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cq 949
Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz
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FMM5802X
FMM5802X
FCSI0599M200
cq 949
fujitsu power amplifier GHz
fujitsu phemt
FUJITSU RF 053
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Untitled
Abstract: No abstract text available
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1
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FMM5804X
FCSI0599M200
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mb3735
Abstract: 6000 Watt audio amplifier circuit diagram VN02 50 watt audio output 10 pin sip MIKROELEKTRONIK Frankfurt
Text: March 1990 Edition 3.0 FUJITSU DATA SHEET MB3735 BTL AUDIO POWER AMPLIFIER 20 WATT BTL AUDIO POWER AMPLIFIER WITH FILTERING CIRCUITRY FOR POWER-ON POP NOISE The Fujitsu MB3735 is designed for a low-frequency high-power amplifier with internal BTL Balanced Transformer less circuitry. The MB3735 is packed in a small plastic 9-pin Single
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MB3735
MB3735
D-6000
189ft
PV0071-903A3
6000 Watt audio amplifier circuit diagram
VN02
50 watt audio output 10 pin sip
MIKROELEKTRONIK Frankfurt
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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FLX202MH-12
FLK202MH-14
FSX52WF
fujitsu "application notes"
fsx51wf
NF037
FMC141401-02
FLL101
fll171
FMC1414P1-02
FLL55
FLL120MK
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n 4113
Abstract: No abstract text available
Text: FUJITSU MAGNETIC DISK HEAD AMPLIFIER MB 4111 MB 4112 MB 4113 March 1984 E dition 2.0 M AGNETIC DISK HEAD A M PLIFIER The Fujitsu MB 4 1 1 1/MB 4 1 12/MB 4113 is a m onolithic bipolar integrated circuit optim ized fo r high performance application to disk head systems.
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12/MB
4111/MB
interfa272
n 4113
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Untitled
Abstract: No abstract text available
Text: FUJITSU Decem ber 1988 Ed itio n 3 .0 MAGNETIC DISK HEAD AMPLIFIER The Fu jitsu M B 4 1 11/M B4113 is a m onolithic bipolar integrated circu it opti mized fo r high performance application to disk head systems. The M B 41 1 1/M B4113 is featured w ith the follow ing four major functions to
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B4113
Tempe627
MB4111
MB4113
24-PAD
FPT-24C-F0T)
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Untitled
Abstract: No abstract text available
Text: F U JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I I MB3604 Decem ber 1987 E d itio n 1.0 HIGH FREQUENCY OPERATIONAL AMPLIFIER The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. The MB3604 has differential inputs, single-end output, and an on-chip buffer
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MB3604
MB3604
16-LEAD
DIP-16P-M04)
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Untitled
Abstract: No abstract text available
Text: ¡0 FUJITSU MICROELECTRONICS 31E D D 37 MT7ti2 Ga iS L >4 0 b HBFMI 010002850201000201000201000201020100 HIGH FREQ UENCY O PE R A TIO N A L A M P L IFIE R The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology.
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MB3604
B3604
0Q15b4b
T-79-07-10
16-LEAD
DIP-16C-C01)
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B3604
Abstract: No abstract text available
Text: Aprì! 1990 Edition 2.0 FUJITSU DATA SH EET '• MB3604 HIGH FREQUENCY OPERATIONAL AMPLIFIER HIGH FREQUENCY SINGLE OPERATIONAL AMPLIFIER The Fujitsu M B3604 is a m o n o lith ic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.
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MB3604
B3604
DIP-16P-M04
D-6000
PV0014-904A2
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