fujitsu power amplifier GHz
Abstract: power amplifier mmic
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5802X
FMM5802X
FCSI0599M200
fujitsu power amplifier GHz
power amplifier mmic
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Untitled
Abstract: No abstract text available
Text: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5522GJ
FMM5522GJ
FCSI0599M200
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874 561 0 4V
Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
874 561 0 4V
FMM5702
FUJITSU MMIC LNA
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Untitled
Abstract: No abstract text available
Text: FLL310IQ-3A L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 30W Excellent Linearity Suitable for class A and class AB operation. High PAE: 40%. DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employs a push-pull design which
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FLL310IQ-3A
FLL310IQ-3A
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: hadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W
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FLM7179-18F
-46dBc
FLM7179-18F
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W
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FLM7179-12F
-46dBc
FLM7179-12F
FCSI0599M200
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FMM5702X
Abstract: FMM5702
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
FMM5702
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FMM5804X
Abstract: fujitsu power amplifier GHz
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology
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FMM5804X
FMM5804X
FCSI0599M200
fujitsu power amplifier GHz
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FLM7179-12F
Abstract: No abstract text available
Text: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM7179-12F
-46dBc
FLM7179-12F
FCSI0599M200
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FLM5972-8F
Abstract: No abstract text available
Text: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM5972-8F
-45dBc
FLM5972-8F
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50W
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FLM5972-8F
-45dBc
FLM5972-8F
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5522GJ
FMM5522GJ
FCSI0599M200
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fujitsu gaas fet
Abstract: FLL310IQ-3A
Text: FLL310IQ-3A L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 30W Excellent Linearity Suitable for class A and class AB operation. High PAE: 40%. DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employs a push-pull design which
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FLL310IQ-3A
FLL310IQ-3A
FCSI0599M200
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W
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FLM1011-3F
-46dBc
FLM1011-3F
FCSI0599M200
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FMM5522GJ
Abstract: No abstract text available
Text: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5522GJ
FMM5522GJ
FCSI0599M200
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FMM5702
Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
FMM5702
34500
544 mmic
2732G
NF 936
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Untitled
Abstract: No abstract text available
Text: FMM5522GJ VSATMMIC FEATURES • • • • • • High Output Power: P-|<jB = 35.0dBm Typ. High Gain: G-ih r = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5522GJ
FMM5522GJ
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: FLM5972-8F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 39.0dBm Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 28.0dBm • Broad Band: 5.9 ~ 7.2GHz • Impedance Matched Zin/Zout = 50Q
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FLM5972-8F
-45dBc
FLM5972-8F
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1
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FMM5804X
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: FLM7785-12F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 41 -506171 Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 34% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 7.7 ~ 8.5GHz • Impedance Matched Zin/Zout = 50Q
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FLM7785-12F
-46dBc
7785-12F
FCSI0599M200
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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cq 949
Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz
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FMM5802X
FMM5802X
FCSI0599M200
cq 949
fujitsu power amplifier GHz
fujitsu phemt
FUJITSU RF 053
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FLM7179-12F
Abstract: cq 443 fet 2819 18 g
Text: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q
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-46dBc
FLM7179-12F
FLM7179-12F
FCSI0599M200
cq 443
fet 2819 18 g
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FLM1011-3F
Abstract: fujitsu gaas fet
Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 35.0dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q
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FLM1011-3F
-46dBc
FLM1011-3F
FCSI0599M200
fujitsu gaas fet
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