FMM5806X Search Results

FMM5806X Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
FMM5806X		Fujitsu	24-27.0 GHz Power Amplifier MMIC		Original	PDF

FMM5806X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
0 281 002 924 Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology	Original	PDF	FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
fujitsu power amplifier GHz Abstract: No abstract text available Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology	Original	PDF	FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz
FUJITSU SEMICONDUCTOR phemt Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology	Original	PDF	FMM5806X 26dBm FMM5806X FCSI0699M200 FUJITSU SEMICONDUCTOR phemt fujitsu power amplifier GHz power amplifier mmic
Untitled Abstract: No abstract text available Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology	Original	PDF	FMM5806X 26dBm FMM5806X