FSS430R1 Search Results

FSS430R1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
FSS430R1		Fairchild Semiconductor	3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET		Original	PDF
FSS430R1		Intersil	3A, 500V, 2.70 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs		Original	PDF

FSS430R1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2E12 Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3 Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSS430D, FSS430R 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
2E12 Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3 Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSS430D, FSS430R 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
NI-26 Abstract: Rad Hard in Fairchild for MOSFET 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3 Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	PDF	FSS430D, FSS430R NI-26 Rad Hard in Fairchild for MOSFET 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Untitled Abstract: No abstract text available Text: H A R R IS X FSS430D, FSS430R S em iconductor 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, ros ON = 2.70£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSS430D, FSS430R O-257AA MIL-S-19500
Untitled Abstract: No abstract text available Text: W A R D 'S FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, Fd S ON = 2.70S1 The Discrete Products O peration of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSS430D, FSS430R MIL-STD-750, MIL-S-19500, 100ms; 500ms;