pseudomorphic HEMT
Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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FPD7612
FPD7612General
FPD7612
25mx200m
12GHz
18GHz
22-A114.
MIL-STD-1686
MIL-HDBK-263.
pseudomorphic HEMT
MIL-HDBK-263
AlGaAs resistivity
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FPD7612
Abstract: MIL-HDBK-263
Text: FPD7612 GENERAL PURPOSE PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 11 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE BOND
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FPD7612
FPD7612
MIL-HDBK-263
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FPD7612P70
Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.
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FPD7612P70
FPD7612P70
22dBm
85GHz
24GHz
11GHz)
0805-X7R
HEMT marking P
1005FHL
InP HBT transistor low noise
pseudomorphic HEMT
rogers 4003
InP transistor HEMT
DS090629
ATC0805X7R
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Untitled
Abstract: No abstract text available
Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.
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FPD7612P70
FPD7612P70
22dBm
85GHz
24GHz
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FPD750
Abstract: FPD7612 417E TOM2 FILTRONIC modeling report Modelling
Text: FPD7612 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD7612 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD7612 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD7612 discrete p-HEMT device. The
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FPD7612
28GHz
25GHz
FPD750
417E
TOM2
FILTRONIC modeling report
Modelling
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FPD7612P70
Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.
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FPD7612P70
FPD7612P70
22dBm
85GHz
18GHz
11GHz)
PHEMT marking code a
HEMT marking P
InP transistor HEMT
MIL-HDBK-263
Gan hemt transistor RFMD
rfmd model marking code
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Untitled
Abstract: No abstract text available
Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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FPD7612
FPD7612General
FPD7612
mx200ï
12GHz
18GHz
22-A114.
MIL-STD-1686
MIL-HDBK-263.
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320240a1
Abstract: 0.15 um pHEMT transistor
Text: FPD7612 GENERAL PURPOSE PHEMT Datasheet v2.2 LAYOUT: FEATURES: • • • • • 20.5 dBm Output Power P1dB 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:
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FPD7612
FPD7612
22A114.
MIL-STD-1686
MIL-HDBK-263.
320240a1
0.15 um pHEMT transistor
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FPD7612P70
Abstract: FPD7612
Text: PRELIMINARY • FPD7612P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 20 dBm Output Power P1dB ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 24 GHz
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FPD7612P70
FPD7612P70
FPD7612
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
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0.15 um pHEMT transistor
Abstract: FPD7612
Text: FPD7612 Datasheet v3.0 GENERAL PURPOSE PHEMT FEATURES: • • • • • LAYOUT: 20.5 dBm Output Power P1dB 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:
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FPD7612
22-A114.
MIL-STD-1686
MILHDBK-263.
0.15 um pHEMT transistor
FPD7612
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AlGaAs resistivity
Abstract: fpd7612-000s3 FPD7612 RFMD FPD7612 MIL-HDBK-263 InP transistor HEMT TRANSISTOR 841 DS100601
Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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FPD7612
FPD7612General
FPD7612
25mx200m
12GHz
18GHz
22-A114.
MIL-STD-1686
MIL-HDBK-263.
AlGaAs resistivity
fpd7612-000s3
FPD7612 RFMD
MIL-HDBK-263
InP transistor HEMT
TRANSISTOR 841
DS100601
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VCO-102
Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high
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rf3826
Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Text: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.
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pnp-1500-p22
Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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