0603 footprint IPC
Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD3000SOT89
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89
25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE-BD
FPD3000SOT89CE-BE
FPD3000SOT89CE-BG
0603 footprint IPC
FPD3000
TRANSISTOR BC 157
FPD3000SOT89E
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Untitled
Abstract: No abstract text available
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m
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FPD3000SOT89CE
FPD3000SOT8
FPD3000SOT89CE
30dBm
FPD3000SOT89CESQ
FPD3000SOT89CESR
FPD3000SOT89PCK
DS111103
85GHz
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Untitled
Abstract: No abstract text available
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm
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FPD3000SOT89CE
FPD3000SOT8
FPD3000SOT89CE
3000Pm
FPD3000SOT89CESQ
FPD3000SOT89PCK
85GHz
FPD3000SOT89CESR
DS111103
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FPD3000SOT89
Abstract: No abstract text available
Text: EB3000SOT89BA FPD3000SOT89 1.85GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 31dBm Output Power 12dB Gain 0.9dB Noise Figure 43dBm OIP3 Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB3000SOT89BA
FPD3000SOT89
85GHz
85GHz
31dBm
43dBm
400mA
85GHz.
FPD3000SOT89;
3000m
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FPD3000SOT89
Abstract: No abstract text available
Text: EB3000SOT89BB FPD3000SOT89 0.9GHz EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 30dBm Output Power 18dB Gain 1.2dB Noise Figure 41dBm OIP3 @ 22dBm Pout Total Power Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB3000SOT89BB
FPD3000SOT89
85GHz
30dBm
41dBm
22dBm
400mA
FPD3000SOT89;
3000m
30mil
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fpd3000
Abstract: 3024D FPD3000SOT89
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m
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FPD3000SOT8
FPD3000SOT89CE
FPD3000SOT89CE
3000m
30dBm
45dBm
FPD3000SOT89CE:
FPD3000SOT89CESQ
FPD3000SOT89CESR
fpd3000
3024D
FPD3000SOT89
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TRANSISTOR BC 298
Abstract: bc 2878 transistor transistor BC 568 FPD3000SOT89 FPD3000SOT89E transistor BC 8050 bc 2878 fpd3000 bd 8050 TRANSISTOR
Text: FPD3000SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant
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FPD3000SOT89
1850MHZ)
FPD3000SOT89E:
2002/95/EC)
FPD3000SOT89
FPD3000SOT89E
22-A114.
J-STD-020C,
TRANSISTOR BC 298
bc 2878 transistor
transistor BC 568
FPD3000SOT89E
transistor BC 8050
bc 2878
fpd3000
bd 8050 TRANSISTOR
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FPD3000SOT89
Abstract: FPD3000SOT89E InGaAs hemt biasing
Text: FPD3000SOT89E FPD3000SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD3000SOT89E
FPD3000SOT8
FPD3000SOT89E
25mx1500m
FPD3000SOT89E:
FPD3000SOT89PCK
FPD3000SOT89ESQ
DS100630
FPD3000SOT89
InGaAs hemt biasing
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FPD3000SOT89E
Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD3000SOT89
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89
25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE
EB3000SOT89-BC
FPD3000SOT89E
FPD3000SOT89CE
micro transistor 1203
EB3000SOT89-BC
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FPD3000SOT89
Abstract: No abstract text available
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD3000SOT89CE
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89CE
25mx1500m
FPD3000SOT89CE:
FPD3000SOT89CECE
EB3000SOT89-BC
FPD3000SOT89
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FPD3000SOT89
Abstract: 9421
Text: EB3000SOT89BC FPD3000SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.0 2.2 29.5 29.0 12.0 11.5 0.9 0.9 43.5 43.0 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB3000SOT89BC
FPD3000SOT89
400mA
FPD3000SOT89;
3000m
30mil
31mil
9421
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FPD3000
Abstract: FPD3000SOT89 FPD3000SOT89E MIL-HDBK-263 0J-60
Text: FPD3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 30 dBm Output Power (P1dB) ♦ 13 dB Small-Signal Gain (SSG) ♦ 1.3 dB Noise Figure ♦ 45 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD3000SOT89E
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FPD3000SOT89
FPD3000SOT89E
FPD3000SOT89
FPD3000
FPD3000SOT89E
MIL-HDBK-263
0J-60
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2.4GHz amplifier schematic
Abstract: FPD3000 transistor 2.4GHz amplifier schematic FPD3000SOT89
Text: EB3000SOT89BE FPD3000SOT89 2.4GHz PA EVALUATION BOARD DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively matched at a frequency of 2.4 to 2.6GHz. The active device is a FPD3000SOT89 3000 m gate periphery PHEMT. The connectors are SMA jacks soldered to a 30mil
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EB3000SOT89BE
FPD3000SOT89
FPD3000SOT89
3000m
30mil
2.4GHz amplifier schematic
FPD3000
transistor 2.4GHz amplifier schematic
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transistor BC 568
Abstract: transistor horizontal c 5802 transistor BC 388 bc 2878 transistor 275 v 593 BC 1325
Text: FPD3000SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant
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FPD3000SOT89
1850MHZ)
FPD3000SOT89E:
2002/95/EC)
FPD3000SOT89
22-A114.
J-STD-020C,
transistor BC 568
transistor horizontal c 5802
transistor BC 388
bc 2878 transistor
275 v 593 BC 1325
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rf3826
Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Text: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.
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RF5632
Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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pnp-1500-p22
Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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