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    FLC31 Price and Stock

    TE Connectivity PGFLC3-18-16-1-C

    PGFLC3-18-16-1-C
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    Avnet Americas PGFLC3-18-16-1-C Bulk 50
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    Interstate Connecting Components PGFLC3-18-16-1-C
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    Master Electronics PGFLC3-18-16-1-C
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    Sager PGFLC3-18-16-1-C 1
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    Kyocera AVX Components FFLC31MME3057

    Power Film Capacitor, 3050 uF, 1.35 kV, � 10%, PP, Chassis Mount (Alt: FFLC31MME3057)
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    Kyocera AVX Components FFLC31MMC5517

    Power Film Capacitor, 5510 uF, 1 kV, � 10%, PP, Chassis Mount (Alt: FFLC31MMC5517)
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    Kyocera AVX Components FFLC31MMD4427

    Power Film Capacitor, 4420 uF, 1.1 kV, � 10%, PP, Chassis Mount (Alt: FFLC31MMD4427)
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    Kyocera AVX Components FFLC31FME3057

    Power Film Capacitor, 3050 uF, 1.35 kV, � 10%, PP, Chassis Mount (Alt: FFLC31FME3057)
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    FLC31 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLC311MG-4 Unknown FET Data Book Scan PDF
    FLC311MGXIII4 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLC317MG-4 Fujitsu C-Band Power GaAs FET Original PDF
    FLC317MG-4 Unknown High Voltage - High Power GaAs FET Original PDF
    FLC317MG-4-E1 Fujitsu FET: P Channel: ID 1.8 A Original PDF

    FLC31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    High Power GaAs FET

    Abstract: Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 FLC317MG-4 High voltage GaAs FET FLC31
    Text: FLC317MG-4 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=34.8dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Proven Reliability ・Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4 17Network High Power GaAs FET Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 High voltage GaAs FET FLC31

    FLC317MG-4

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4

    Untitled

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4 FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4

    FLC317MG-4

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4 FCSI0598M200

    37 TV samsung lcd Schematic circuit diagram

    Abstract: schematic diagram inverter lcd monitor fujitsu lmg9970zwcc FLC31SVC6S schematic diagram crt tv sharp hitachi tx31 LT133X1-124 37 TV samsung lcd Schematic schematic diagram tv sharp sanyo schematic diagram dvd s1
    Text: 65550/554/555 & 69000 HiQVideo Series Application Note Book Revision 1.0 June 1998  Copyright Notice Copyright 1998 Chips and Technologies, Inc., a subsidiary of Intel Corporation. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc., a subsidiary of Intel Corporation. You may not reproduce, transmit ,


    Original     		PDF 655xx AN119 37 TV samsung lcd Schematic circuit diagram schematic diagram inverter lcd monitor fujitsu lmg9970zwcc FLC31SVC6S schematic diagram crt tv sharp hitachi tx31 LT133X1-124 37 TV samsung lcd Schematic schematic diagram tv sharp sanyo schematic diagram dvd s1

    schematic diagram crt tv samsung

    Abstract: schematic diagram crt tv sharp schematic diagram inverter lcd monitor fujitsu P24R10 37 TV samsung lcd Schematic circuit diagram pcb circuit diagram of crt tv samsung FLC31SVC6S toshiba notebook schematic diagram free CT1642 samsung crt monitor circuit diagram
    Text: 65550/554/555 & 69000 HiQVideo Series Application Note Book Revision 1.1 December 1998  Copyright Notice Copyright 1998 Chips and Technologies, Inc., a subsidiary of Intel Corporation. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc., a subsidiary of Intel Corporation. You may not reproduce, transmit ,


    Original     		PDF 655xx AN119 schematic diagram crt tv samsung schematic diagram crt tv sharp schematic diagram inverter lcd monitor fujitsu P24R10 37 TV samsung lcd Schematic circuit diagram pcb circuit diagram of crt tv samsung FLC31SVC6S toshiba notebook schematic diagram free CT1642 samsung crt monitor circuit diagram

    samsung dl6

    Abstract: LMG9970ZWCC FR27 FR37 TX30D01VC1CAA edmgr LQ14X01 NL8060BC31-01 fr17 TX31D*VC1CAA
    Text: 6555x HiQVideo Series Panel Interface Information Application Note Revision 1.1 May 1997   Copyright Notice Copyright 1997 Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce, transmit,


    Original     		PDF 6555x 60MHz, 50MHz 6555x AN109 samsung dl6 LMG9970ZWCC FR27 FR37 TX30D01VC1CAA edmgr LQ14X01 NL8060BC31-01 fr17 TX31D*VC1CAA

    transistor z0127 MA

    Abstract: ImpacTV2 YM 1104 YAMAHA CLEVO htc hd2 LCD flex connector MD7 LC 2716 2N007 VCC3 2456 23 new bright R288 RO5 9435
    Text: 1 2 3 2800/2820/2850 4 5 Notebook Computer 6 7 Service Manual 8 i Preface NOTICE The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any


    Original     		PDF

    MD7 LC 2716

    Abstract: MD7 LC 2716 VOLTAGE CLEVO ati rage 128 amc ver 2.0 RO3 9435 QM723 96v inverter circuit diagrams 2N1072 R5C475II TX36D85VC
    Text: 1 2 3 2800/2820/2850 4 5 Notebook Computer 6 7 Service Manual 8 i Preface NOTICE The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any


    Original     		PDF

    FLC317MG-4

    Abstract: S211 fujitsu gaas fet
    Text: FLC317MG-4 - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G-j^B = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability


    OCR Scan     		PDF FLC317MG-4 FLC317MG-4 FCSI0598M200 S211 fujitsu gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FLC311MG-4 FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC311MG-4 is a power GaAs FET that is designed for


    OCR Scan     		PDF FLC311MG-4 FLC311MG-4

    flc311mg-4

    Abstract: FLC311MG4 FLC311
    Text: FLC311MG-4 F lltrn ;il J C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|dB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC311MG-4 is a power GaAs FET that is designed for


    OCR Scan     		PDF FLC311MG-4 FLC311MG-4 FLC311MG4 FLC311

    teledyne 640-1

    Abstract: teledyne relay 640-1 teledyne 640-1 relay 640-1 relay 640-1 teledyne teledyne 640 relay TTL 7438
    Text: W TELEDYNE SOLID STATE \ \ % V % 1 m • +' • ■- 1 • . ■ 1 flc317bbti aODDb3b SIE « T S S SSE D TELEDYNE SOLID STATE 1 -" SERENDIP SOLID STATE AC/DC RELAY T R A N S F O R M E R IS O L A T E D 8 0 m A / ± 5 0 V dc ELECTRICAL SPECIFICATIONS FEATURES


    OCR Scan     		PDF flc317bbti O-116 MIL-STD-202 O-116} teledyne 640-1 teledyne relay 640-1 teledyne 640-1 relay 640-1 relay 640-1 teledyne teledyne 640 relay TTL 7438

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan     		PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK

    29F400TA

    Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
    Text: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)


    OCR Scan     		PDF MBM29F002T/B 29F002T/B-X MBM29LV002T/B 29LV002T/B-X 29LV004B 29LV004T 29LV008B 29LV008T 29F016 29F016A 29F400TA FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA