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    FLC253 Price and Stock

    FUJITSU Limited FLC253MH-6

    TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLC253MH-6 144
    • 1 $139.62
    • 10 $139.62
    • 100 $104.715
    • 1000 $104.715
    • 10000 $104.715
    		Buy Now

    FUJITSU Semiconductor Limited FLC253MH-8

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLC253MH-8 1
    • 1 $349.0417
    • 10 $349.0417
    • 100 $349.0417
    • 1000 $349.0417
    • 10000 $349.0417
    		Buy Now

    Fuji Electric Co Ltd FLC253MH6

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange FLC253MH6 29
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    FLC253 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLC253MH-6 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLC253MH-6 Unknown FET Data Book Scan PDF
    FLC253MH-8 Unknown FET Data Book Scan PDF
    FLC253MHXIII8 Unknown High Frequency Device Data Book (Japanese) Scan PDF

    FLC253 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLC253MH8

    Abstract: No abstract text available
    Text: F, , FLC253MH-8 J C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 34.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-8 is a power GaAs FET that is designed for general


    OCR Scan     		PDF FLC253MH-8 FLC253MH-8 FLC253MH8

    FLC253MH-6

    Abstract: No abstract text available
    Text: FLC253MH-6 C -tìa n d Power ìaA s FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 15 w Total Power Dissipation Pt Tc = 25°C Storage Temperature Tstg


    OCR Scan     		PDF FLC253MH-6 Volt26 FLC253MH-6

    FLC253MH-8

    Abstract: q050 FLC253MH8 0/FLC253MH-8
    Text: F|.fjU-,. FLC253MH-8 rU JlljU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-i ^ b = 34.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: r iadd = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-8 is a power GaAs FET that is designed for general


    OCR Scan     		PDF FLC253MH-8 FLC253MH-8 q050 FLC253MH8 0/FLC253MH-8

    FLC253MH-6

    Abstract: No abstract text available
    Text: F, , FLC253MH-6 J C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 34.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-6 is a power GaAs FET that is designed for general


    OCR Scan     		PDF FLC253MH-6 FLC253MH-6

    FLC253MH-6

    Abstract: FLC253MH6 FLC253
    Text: FLC253MH-6 fujTtsu C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|dB = 34.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-6 is a power GaAs FET that is designed for general


    OCR Scan     		PDF FLC253MH-6 FLC253MH-6 FLC253MH6 FLC253

    FLL55

    Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
    Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.


    OCR Scan     		PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan     		PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK