MXIC flash disk controller
Abstract: macronix mxic dsp MX93011 HD11 MX51L9692 MXIC sequential
Text: PRELIMINARY MX51L9692 Multiple Interface Flash and MROM Memory Controller 1. Features Flash/MROM Memory Interface: • Support all the control signals to execute read/write/ erase operation for Samsung's, Toshiba's, and Hitachi's serial type Flash memory.
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MX51L9692
256Mbit
64Mbit/128Mbit/256Mbit/512Mbit
PM0935
MXIC flash disk controller
macronix mxic dsp
MX93011
HD11
MX51L9692
MXIC sequential
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S6Vxxx 44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S6Vxxx
44Pin
128MB
HFDOM44S6Vxxx
HFDOM44S6V-xxx
seri2005)
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S3Vxxx 44Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S3Vxxx
44Pin
384MB,
HFDOM44S3Vxxx
HFDOM44S3V-xxx
384MByte
48Mbyte
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377H
Abstract: No abstract text available
Text: HANBit HFDOM40S6Rxxx 40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S6Rxxx
40Pin
128MB
HFDOM40S6Rxxx
HFDOM40S6R-xxx
DOM40S6R128
377H
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM40S3Vxxx 40Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S3Vxxx
40Pin
384MB,
HFDOM40S3Vxxx
HFDOM40S3V-xxx
384MByte
DOM40S3V064
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flash disk
Abstract: SEC130
Text: HANBit HFDOM44S6Rxxx 44Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S6Rxxx
44Pin
128MB
HFDOM44S6Rxxx
HFDOM44S6R-xxx
DOM44S6R128
flash disk
SEC130
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM40S3Rxxx 40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S3Rxxx
40Pin
512MB,
HFDOM40S3Rxxx
HFDOM40S3R-xxx
512MByte
DOM40S3R128
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2Gbyte NAND flash
Abstract: No abstract text available
Text: HANBit HFDOM40S6Vxxx 40Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S6Vxxx
40Pin
128MB
HFDOM40S6Vxxx
HFDOM40S3V-xxx
2Gbyte NAND flash
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S3Rxxx 44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S3Rxxx
44Pin
512MB,
HFDOM44S3Rxxx
HFDOM44S3R-xxx
512MByte
DOM44S3R128
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samsung 8Gb nand flash
Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash
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108MB/s
256Mb
BR-06-NAND-001
samsung 8Gb nand flash
oneNand
onenand xsr
eXtended Sector Remapper
oneNand flash
SRAM-512Mb
samsung NAND FLASH BGA
NAND FLASH BGA
samsung 2GB Nand flash
samsung xsr
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tsop-56 samsung
Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:
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576Mb
256Mb
tsop-56 samsung
TC58DVM72A1FTI0
tc58fvm5t2atg
TSOP1-48
THNCF1G02DG
THNCF1G02DGI
SD-M512
TC58NVG0S3AFTI5
THNCF128MMG
toshiba Nand flash bga
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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MX-1610
Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
Text: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY
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MX26C512A
MX26C1000A
MX26C1024A
MX25L4004A
MX29F1610
MX26C512A,
512K-bit
MX26C512A
MX9691
MX-1610
intel 28f200
db86082
mx1610
intel 80586
MX28F002
MXIC flash disk controller
db86082b
MX26C1000A
KM29N32000
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ba37 diode
Abstract: K8D1716U K8D1716UBB K8D1716UTB BGA11 samsung nor flash
Text: K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft 1 Draft Date Remark July 25, 2004 Advance Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY
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K8D1716UTB
K8D1716UBB
48-PIN
1220F
047MAX
ba37 diode
K8D1716U
K8D1716UBB
BGA11
samsung nor flash
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KLM8G2FE3B
Abstract: klm8g samsung eMMC 4.5 TLC nand samsung tlc nand flash KLM4G 153 ball eMMC memory SAMSUNG emmc klm8g2 Samsung KLMBG4GE2A
Text: Samsung eMMC Managed NAND Flash memory solution supports mobile applications FBGA QDP Package BROCHURE Efficiency, reduced costs and quicker time to market Expand device development with capable memory solutions Simplify mass storage designs Conventional NAND Flash memory can be challenging to
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s5l840fx
Abstract: S5L840F calmRISC16 P9336 and pin diagram of MMC 4017 CalmRISC-16 player audio to flash memoy s5l8 samsung i2s S5H5002
Text: CPAD-WALTZ S5L840F Internet Audio Decoder for Flash Memory Media Data Sheet INTRODUCTION S5L840F is a single chip digital audio player IC supporting various compressed audio format on Flash Memory Media. S5L840F provides 2Mbits of embedded NOR flash memory and 76Kbytes of SRAM requiring no external
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S5L840F)
S5L840F
76Kbytes
16bit
CALMRISC16TM)
24bit
MAC2424
CalmRISC16)
s5l840fx
calmRISC16
P9336
and pin diagram of MMC 4017
CalmRISC-16
player audio to flash memoy
s5l8
samsung i2s
S5H5002
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SAMSUNG NAND FLASH TRANSLATION LAYER
Abstract: SAMSUNG NAND FLASH TRANSLATION LAYER FTL AMD 2m flash memory NAND flash memory toshiba NAND Flash memory controller ecc NAND FLASH TRANSLATION LAYER FTL amd nand flash ultranand NAND intel AMD PCMCIA Flash Memory Card INTEL FLASH MEMORY DATA SHEET
Text: White Paper: Spartan-II R WP143 v1.0 May 8, 2001 Introduction Xilinx Generic Flash Memory Interface Solutions This white paper shows how a generic flash memory interface can be combined with Xilinx IP interface cores to add flash memory to Xilinx Spartan device designs. The flexible Xilinx
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WP143
Am29F032B
K9F6408U0M
SAMSUNG NAND FLASH TRANSLATION LAYER
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
AMD 2m flash memory
NAND flash memory
toshiba NAND Flash memory controller ecc
NAND FLASH TRANSLATION LAYER FTL
amd nand flash ultranand
NAND intel
AMD PCMCIA Flash Memory Card
INTEL FLASH MEMORY DATA SHEET
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sandisk mmc 16MB
Abstract: Lexar sandisk flash controller sandisk sony sd card sandisk SD 24MHz 3.3v Samsung sd sd card sandisk Mmcplus
Text: Flash Card Comparison Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology Flash Card Comparison 1/2
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24MHz
25MHz
20MHz
52MHz
16MB/s
sandisk mmc 16MB
Lexar
sandisk flash controller
sandisk
sony sd card
sandisk SD
24MHz 3.3v
Samsung sd
sd card sandisk
Mmcplus
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IC 4093
Abstract: K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B K9F1208U0B-D K9F1208U0B-V K9F1208U0B-Y
Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Apr. 24th 2004 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9F1208Q0B
K9F1208D0B
K9F1208U0B
IC 4093
K9F1208D0B
K9F1208D0B-D
K9F1208D0B-Y
K9F1208Q0B
K9F1208Q0B-D
K9F1208U0B
K9F1208U0B-D
K9F1208U0B-V
K9F1208U0B-Y
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SAMSUNG K9F1208U0B
Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9F1208Q0B
K9F1208D0B
K9F1208U0B
SAMSUNG K9F1208U0B
K9F1208* technical
K9F1208U0B
K9F1208U0B-YCB0
K9F1208D0B
K9F1208D0B-D
K9F1208D0B-Y
K9F1208Q0B
K9F1208Q0B-D
K9F1208U0B-D
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Samsung "NAND Flash" "ordering information"
Abstract: NOR Flash samsung nor flash samsung memory
Text: 3. ORDERING INFORMATION NOR FLASH MEMORY Z 3 KM 28 B CCC D E - F GG Access Time SAMSUNG Memory Block Architecture NOR FLASH Operating Voltage Range Package Operating Temperature Range Densitv/Oraanization 1. SAMSUNG Memory 2. NOR Flash 6. Package Type T -G -Z —
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800-------------------8Mbit,
x8/x16
16Mbit,
44-Lead
48-CSP
32000---------------32M
128Mbit
Samsung "NAND Flash" "ordering information"
NOR Flash
samsung nor flash
samsung memory
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km29v040t
Abstract: yd 4145 km29v040 V040T
Text: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective
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KM29V040T
512Kx8
500us
400mil/0
KM29V040T
512Kx8bit
KM29V040
yd 4145
V040T
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flash controller verilog code
Abstract: verilog code hamming hamming code FPGA hamming code 512 bytes flash hamming ecc Micron NAND flash controller verilog code for Flash controller verilog code for NOR Flash controller micron ecc nand A3P125
Text: IWave Meter C om panionC ore Embedding Intelligence Overview iW-NAND Flash Controllerprovides an easy interface to access NAND Flash Memory devices. This controller supports upto 32 GB NAND Flash memory. IW-NAND Flash Controller Features * * * * * * * * *
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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