MO-205
Abstract: No abstract text available
Text: Revised June 2001 BGA114A 114-Ball Fine-Pitch Ball Grid Array FBGA , JEDEC MO-205, 5.5mm Wide Package Number BGA114A Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
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BGA114A
114-Ball
MO-205,
BGA114ArevE
MO-205
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K 349
Abstract: No abstract text available
Text: 4.050" 1 399 49 99 51 400 2 2 1 B D F 2.750" 351 H 352 K 349 350 M P T 300 301 4 3 150 149 152 151 200 199 6 5 7 A C E G J L N R U 252 250 202 251 249 201 302 299 101 100 52 50 102 Top View TOP INTERFACE Male pins Mates with SK-BGA119Ax-Z-M-0x, SK-LGA119Ax-Z-M-0x sockets
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SK-BGA119Ax-Z-M-0x,
SK-LGA119Ax-Z-M-0x
LS-BGA119A-02
SF-BGA119A-B-01
FR4/G10
finish10
PA-BGA119A-01
PA-BGA119A-01
K 349
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SF-BGA117A-B-11
Abstract: No abstract text available
Text: D Package Code: BGA117A C 15.0mm[0.590"] 1.52mm [0.060"] See BGA pattern code to the right for actual pattern layout Y 15.0mm[0.590"] X 1.5mm [0.059"] Top View reference only 2 0.36mm [0.014"] dia. Ø 0.64mm pad [Ø 0.025"] 5.33mm 3.74mm [0.147"] [0.210"]
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BGA117A
FR4/G10
SF-BGA117A-B-11
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SF-BGA119A-B-11
Abstract: No abstract text available
Text: D Package Code: BGA119A C 7.62mm [0.300"] See BGA pattern code to the right for actual pattern layout Y 20.32mm [0.800"] X Top View reference only 1.27 mm [0.050"] 2 0.36mm [0.014"] dia. 5.33mm 3.74mm [0.147"] [0.210"] Ø 0.64mm pad [Ø 0.025"] 1.27mm [0.050"]
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BGA119A
FR4/G10
SF-BGA119A-B-11
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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MB9B300B
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00025-0v01-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B510R Series MB9BF512N/R, MB9BF514N/R, MB9BF515N/R, MB9BF516N/R DESCRIPTION The MB9B510R Series are a highly integrated 32-bit microcontrollers dedicated for embedded controllers
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DS706-00025-0v01-E
32-bit
MB9B510R
MB9BF512N/R,
MB9BF514N/R,
MB9BF515N/R,
MB9BF516N/R
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Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
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MB9A140NA DS706-00040
Abstract: MB9AF144NA
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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EFM32WG390
Abstract: No abstract text available
Text: .the world's most energy friendly microcontrollers EFM32WG390 DATASHEET F256/F128/F64 • ARM Cortex-M4 CPU platform • High Performance 32-bit processor @ up to 48 MHz • DSP instruction support and floating-point unit • Memory Protection Unit • Flexible Energy Management System
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EFM32WG390
F256/F128/F64
32-bit
BGA112
EFM32WG390FXX
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Untitled
Abstract: No abstract text available
Text: Preliminary .the world's most energy friendly microcontrollers EFM32LG390 DATASHEET F256/F128/F64 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System
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EFM32LG390
F256/F128/F64
32-bit
BGA112
EFM32LG390FXX
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Untitled
Abstract: No abstract text available
Text: Preliminary .the world's most energy friendly microcontrollers EFM32LG990 DATASHEET F256/F128/F64 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System
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EFM32LG990
F256/F128/F64
32-bit
EFM32LG990FXX
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EFM32GG290
Abstract: No abstract text available
Text: Preliminary .the world's most energy friendly microcontrollers EFM32GG290 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System
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EFM32GG290
F1024/F512
32-bit
BGA112
EFM32SY
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43bh
Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
Text: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words
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CXK77P36E160GB
CXK77P18E160GB
CXK77P36E160GB
-100uA
43bh
marking code 42ae
marking JC 6f diode
CXK77P18E160GB
CXK77P36E160GB-4AE
CXK77P36E160GB-4E
43AF
marking 43AF
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2A118
Abstract: No abstract text available
Text: Revised March 2001 74VCX32500 Low Voltage 36-Bit Universal Bus Transceivers with 3.6V Tolerant Inputs and Outputs General Description Features The VCX32500 is an 32-bit universal bus transceiver which combines D-type latches and D-type flip-flops to allow data
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74VCX32500
36-Bit
VCX32500
32-bit
2A118
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Untitled
Abstract: No abstract text available
Text: Preliminary Revised November 2000 FST32211 Quad 12-Bit to Single 48-Bit Bus Switch Preliminary General Description Features The Fairchild Switch FST32211 provides up to 48-bits of high-speed CMOS TTL-compatible bus switching. The low on resistance of the switch allows inputs to be connected to
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FST32211
12-Bit
48-Bit
48-bits
12-bit,
24-bit,
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2a18
Abstract: No abstract text available
Text: Revised April 2001 74LCX32500 Low Voltage 36-Bit Universal Bus Transceivers with 5V Tolerant Inputs and Outputs General Description Features These 36-bit universal bus transceivers combine D-type latches and D-type flip-flops to allow data flow in transparent, latched, and clocked modes.
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74LCX32500
36-Bit
LCX32500
2a18
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Untitled
Abstract: No abstract text available
Text: Preliminary Revised August 2000 FST32211 40/48-Bit Bus Switch Preliminary General Description The Fairchild Switch FST32211 provides up to 48-bits of high-speed CMOS TTL-compatible bus switching. The low on resistance of the switch allows inputs to be connected to
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FST32211
40/48-Bit
48-bits
12-bit,
24-bit,
48-bit
40-bit
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CXK77L18R160GB-3
Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
Text: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer
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CXK77L18R160GB
CXK77L18R160GB
BGA-119P-021
BGA119-P-1422
CXK77L18R160GB-3
CXK77L18R160GB-33
CXK77L18R160GB-4
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SAMSUNG MCP
Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
512tRDR
69-Ball
08MAX
SAMSUNG MCP
samsung K5 MCP
BA35
BA4110
ba4410
BA651
Flash Memory SAMSUNG k5
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00011-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9A110A Series MB9AF111LA/MA/NA, MB9AF112LA/MA/NA, MB9AF114LA/MA/NA, MB9AF115MA/NA, MB9AF116MA/NA DESCRIPTION The MB9A110A Series are highly integrated 32-bit microcontrollers that target for high-performance and
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DS706-00011-2v0-E
32-bit
MB9A110A
MB9AF111LA/MA/NA,
MB9AF112LA/MA/NA,
MB9AF114LA/MA/NA,
MB9AF115MA/NA,
MB9AF116MA/NA
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00042-3v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9A130N Series MB9AF131M/N, MB9AF132M/N DESCRIPTION The MB9A130N Series are highly integrated 32-bit microcontrollers that dedicated for embedded controllers with low-power consumption mode and competitive cost.
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DS706-00042-3v0-E
32-bit
MB9A130N
MB9AF131M/N,
MB9AF132M/N
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CXK77Q18B80AGB
Abstract: CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33
Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
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CXK77Q36B80AGB
CXK77Q18B80AGB
CXK77Q36B80AGB
CXK77Q18B80AGB
640mA
600mA
CXK77Q36B80AGB-28
CXK77Q36B80AGB-33
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