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    FIELD-EFFECT TRANSISTOR Search Results

    FIELD-EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    FIELD-EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPF102 equivalent transistor

    Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
    Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or


    Original     		PDF AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET

    BF511

    Abstract: Bf513
    Text: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect


    Original     		PDF BF510 BF510) BF511) BF512) BF513) BF510 R77/02/pp9 BF511 Bf513

    BF510

    Abstract: BF511 BF512 BF513
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect


    Original     		PDF BF510 BF510) BF511) BF512) BF513) R77/02/pp9 BF511 BF512 BF513

    AN211A

    Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		PDF AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola

    2N3797

    Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		PDF AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE

    Silicon P-Channel Junction FET sot23

    Abstract: BF245A BF245B BF245C BF545A BF545B J210 J211 J212 PMBFJ210
    Text: DISCRETE SEMICONDUCTORS Selection guide Small-signal Field-effect Transistors and Diodes Supersedes data of 1999 May 14 1999 May 21 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS


    Original     		PDF PMBFJ210 PMBFJ211 BAP50-05 BAP51-03 OD323 BAP64-02 OD523 BAP64-03 BAP64-04 Silicon P-Channel Junction FET sot23 BF245A BF245B BF245C BF545A BF545B J210 J211 J212 PMBFJ210

    code marking NEC

    Abstract: date code marking NEC g1683
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2610 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2610, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for applications such as power switch of portable machine and so on.


    Original     		PDF PA2610 PA2610, PA2610T1C code marking NEC date code marking NEC g1683

    MP-25

    Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
    Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.


    OCR Scan     		PDF NP40N06CLC NP40N06DLC NP40N06ELC 175dgree 027QMAX. 1000pF O-220AB O-262AA O-220SMD MP-25 NP40N06ELC TO-220SMD

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    MFE5000

    Abstract: No abstract text available
    Text: MFE5 0 0 0 silicon SILICON P-CHANNEL ENHANCEMENT MOS FIELD EFFECT QUAD TRANSISTOR MOS FIELD-EFFECT QUAD TRANSISTOR P-CHANNEL • Monolithic Construction Provides Improved Temperature Tracking • Four Field Effect Transistors in One Package Cut Assembly Costs


    OCR Scan     		PDF MFE5000 MFE5000

    MFE4007

    Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012
    Text: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types


    OCR Scan     		PDF MFE4007 MFE4012 MFE4007 mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012

    MFE3020

    Abstract: MFE3021
    Text: MFE3020 silicon MFE3021 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS (Type C) Enhancement Mode (Type C| MOS Field-Effect Transistors de­ signed primarily for low power, chopper or switching applications. Low Reverse Gate Current —


    OCR Scan     		PDF MFE3020 MFE3021 MFE3021) MFE3020 MFE3021

    Untitled

    Abstract: No abstract text available
    Text: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs


    OCR Scan     		PDF

    IRFD311

    Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v
    Text: -Standard Power MOSFETs IRFD310, IRFD311, IRFD312, IRFD313 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFD310, IRFD311, IRFD312, IRFD313 IRFD313 IRFD311 FD31 IRFD310 IRFD312 a350v

    IRFD110

    Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
    Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112

    linear applications of power MOSFET IRF640

    Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
    Text: - Standard Power MOSFETs IRF640, IRF641, IRF642, IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF640, IRF641, IRF642, IRF643 92CS-3374I IRF643 1F640, linear applications of power MOSFET IRF640 irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640

    mosfet 1RF740

    Abstract: 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 IRF743
    Text: -— - Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF740, IRF741, IRF742, IRF743 IRF743 IRF74 75BVdss mosfet 1RF740 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740

    IRFF130

    Abstract: IRFF131 IRFF132 IRFF133 C 3259
    Text: -Standard Power MOSFETs IRFF130, IRFF131, IRFF132, IRFF133 File Num ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFF130, IRFF131, IRFF132, IRFF133 0V-100V 92CS-33741 IRFF132 IRFF133 IRFF130 IRFF131 C 3259

    IRF540

    Abstract: irf540 27 MHz IRF540 n-channel MOSFET IRF541 IRF542 mosfet js8 irf540 "27 MHz" MOSFET IRF540 IRF543 power MOSFET IRF540
    Text: - Standard Power MOSFETs File N um ber IRF540, IRF541, IRF542, IRF543 2309 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF540, IRF541, IRF542, IRF543 IRF543 IRF540 irf540 27 MHz IRF540 n-channel MOSFET IRF541 IRF542 mosfet js8 irf540 "27 MHz" MOSFET IRF540 power MOSFET IRF540

    IRFP250

    Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
    Text: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFP250, IRFP251, IRFP252, IRFP253 IRFP253 75BVdss IRFP250 irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252

    IRP623

    Abstract: IRP621 IRF620 IRF620 application IRF621 IRF622 IRF623 TC 3162
    Text: - Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 File Number 1577 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF IRF620, IRF621, IRF622, IRF623 50V-200V IRF622 IRF623 IRP623 IRP621 IRF620 IRF620 application IRF621 TC 3162

    2N4391

    Abstract: 2n4393 2N43 J3060 2N4392
    Text: PRELIMINARY SPECIFICATION SEC FIELD-EFFECT TRANSISTORS ELECTRON DEVICE 2N4391,2N4392,2N4393 HIGH SPEED SW ITCHING AND CHOPPER N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR DESCRIPTION The 2N 4391, 2N 4392, 2N 4393 are depletion mode ju n ctio n field effect transistors, designed fo r high speed sw itching and


    OCR Scan     		PDF 2N4391 2N4392 2N4393 2N4391) 2n4393 2N43 J3060

    MPF970

    Abstract: MPF971 MPF910
    Text: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS


    OCR Scan     		PDF MPF970 MPF971 MPF970 MPF971 MPF910

    IRF221

    Abstract: MOSFET IRF220 IRF222 IRF220 IRF223 IRF22
    Text: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 File Number 1567 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors "-channelenhancementmode 4.0A and 5.0A, 1I50V-200V


    OCR Scan     		PDF IRF220, IRF221, IRF222, IRF223 1I50V-200V 92CS-33741 IRF222 IRF221 MOSFET IRF220 IRF220 IRF22