Untitled
Abstract: No abstract text available
Text: AMPLIFIERS Thin film - GaAs Fet AMPLIFIERS THIN FILM - GaAs FET T02000 SERIES Description Features • Medium power amplifiers • Frequency range: 400 to 4500 MHz • Hermetic package Applications Operating characteristics • Military and space • Telecommunications
|
Original
|
PDF
|
T02000
O2502
O2507*
O2501*
O2504*
O2505
O2506
O2503
O2401
O2406
|
LM780L05ACM-ND
Abstract: PTFB193408SVV1R250XTMA1
Text: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input
|
Original
|
PDF
|
PTFB193408SV
PTFB193408SV
340-watt
H-34275G-6/2
LM780L05ACM-ND
PTFB193408SVV1R250XTMA1
|
Untitled
Abstract: No abstract text available
Text: M O TO RO LA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P03HDL HDTMOS E-FET™ High Density Power FET DPAK for S urface Mount M o to r o la P r e fe r r e d D e v ic e TMOS POWER FET LOGIC LEVEL 19 AMPERES
|
OCR Scan
|
PDF
|
MTD20P03HDL/D
TD20P03HDL
69A-13
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD20P06HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P06HDL H D T M O S E-FET™ H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt Motorola Preferred Device TMOS POWER FET LOGIC LEVEL
|
OCR Scan
|
PDF
|
TD20P06HDL/D
MTD20P06HDL
69A-13
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt M TD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N-Channel Enhancement Mode Silicon Gate
|
OCR Scan
|
PDF
|
MTD1302/D
TD1302
69A-13
|
MPF89
Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max
|
OCR Scan
|
PDF
|
IRFD213
IRFD220
IRFD221
IRFD222
IRFD223
IRFD9120
IRFD9121
IRFD9210
IRFD9213
IRFD91103
MPF89
MPF6659
2 watt fet
MPF910
IRFD9110
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET
|
OCR Scan
|
PDF
|
MTD3N25E/D
TD3N25E
|
2955E
Abstract: MTA2955E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM
|
OCR Scan
|
PDF
|
T0-220
O-220
b3b7254
2955E
b3b7554
MTA2955E
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD20N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet HDTMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand
|
OCR Scan
|
PDF
|
MTD20N06HD/D
69A-13
|
uc2710
Abstract: No abstract text available
Text: UC1710 UC2710 UC3710 UNITROOE High Current FET Driver FEATURES DESCRIPTION • Totem Pole Output with 6A Source/Sink Drive The UC1710 family of FET drivers is made with a high-speed Schottky pro cess to interface between low-level control functions and very higfi-power
|
OCR Scan
|
PDF
|
UC1710
UC2710
UC3710
UC3710
200kHz
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy
|
OCR Scan
|
PDF
|
MTP29N15E/D
TP29N15E
21A-09
|
APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
|
OCR Scan
|
PDF
|
ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
|
TO-3P Jedec package outline
Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
Text: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof
|
OCR Scan
|
PDF
|
2SK1507-01
SC-67
O-220F15
2SK1081-01
2SK956-01
2SK1385-01R
2SK1548-01
2SK1024-01
O-220
TO-3P Jedec package outline
2sk1507
TO-220F15
K1015
TO220F15
2SK1016
2SK1015-01
2SK1916
high voltage mosfet, to-220 case
2SK956-01 equivalent
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N60E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 600 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
TD1N60E/D
TD1N60E
MTD1N60E/D
|
|
|
mosfet J 3305
Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
Text: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,
|
OCR Scan
|
PDF
|
MTP7P06
b3b7254
0CHfl703
mosfet J 3305
221A-06
72SM
AN569
MTP7P06
TMOS Power FET
|
C1710
Abstract: No abstract text available
Text: UC1710 UC2710 UC3710 y UNITRO DE High Current FET Driver FEATURES DESCRIPTION • Totem Pole Output with 6A Source/Sink Drive The U C 1710 family ot FET drivers is made with a high-speed Schottky pro cess to interface between low-level control functions and very high-power
|
OCR Scan
|
PDF
|
UC1710
UC2710
UC3710
100mA
30nFare
C1710
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD5N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD5N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 5.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
TD5N25E/D
TD5N25E
MTD5N25E/D
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N80E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
TD1N80E/D
TD1N80E
MTD1N80E/D
|
Jab zener
Abstract: No abstract text available
Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)
|
OCR Scan
|
PDF
|
T0-220
2SJ334
2SK2312
Packag55
2SK1379
Jab zener
|
Untitled
Abstract: No abstract text available
Text: TetraFET III iFFi I h D1084UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 965 -k 1 10.66 4.19 4.82 -4 .8 2 J 5.33 3.83 Dia. 4.08 1.39 66 T 3.'42 1.01 1.52 i GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W - 28V - 200MHz
|
OCR Scan
|
PDF
|
D1084UK
200MHz
T0-220
|
Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS UC1710 UC3710 U IX IITR O D E High Current FET Driver PRELIMINARY DESCRIPTION FEATURES Totem Pole Output with 6A Source/Sink Drive 35 nseo Delay 25 nsec Rise and Fail Time into 2.2nF The UC1710 family of FET drivers is made with a high-speed Schottky process to interface
|
OCR Scan
|
PDF
|
UC1710
UC3710
UC1710
200kHz
|
Untitled
Abstract: No abstract text available
Text: Preliminary data SIEMENS BTS611 TWO CHANNEL PRO FET D escrip tion PR O FET R an in telligen t p o w e r switch w ith in tegrated Two independent high-side switches Overtem perature protection for each channel Overload protection for each channel Short circuit protection by overtemperature protection
|
OCR Scan
|
PDF
|
BTS611
|
2SK126
Abstract: 2SK1266
Text: Pow er F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Features • • • • ■ Package Dimensions Low ON resistance RDs on : R DS (on) 1 = 0 .080 (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving ( V g s = 4V)
|
OCR Scan
|
PDF
|
2SK1266
180ns
O-220
Tc-25-C
bT32flS2
DD171bb
2SK126
2SK1266
|
2SK770
Abstract: No abstract text available
Text: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage
|
OCR Scan
|
PDF
|
2SK770
O-220
VDO-I50V
2SK770
|
