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    PTFB193408SV Price and Stock

    Infineon Technologies AG PTFB193408SVV1XWSA1

    RF MOSFET LDMOS 30V H-34275G-6
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    DigiKey PTFB193408SVV1XWSA1 Tray
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    Infineon Technologies AG PTFB193408SVV1R250XTMA1

    RF MOSFET LDMOS 30V H-34275G-6
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    DigiKey PTFB193408SVV1R250XTMA1 Reel
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    PTFB193408SV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFB193408SVV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34275G-6/2 Original PDF
    PTFB193408SVV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34275G-6/2 Original PDF

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    LM780L05ACM-ND

    Abstract: PTFB193408SVV1R250XTMA1
    Text: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input


    Original     		PDF PTFB193408SV PTFB193408SV 340-watt H-34275G-6/2 LM780L05ACM-ND PTFB193408SVV1R250XTMA1

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA