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    2SK126

    Abstract: 2SK1266
    Text: Pow er F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Features • • • • ■ Package Dimensions Low ON resistance RDs on : R DS (on) 1 = 0 .080 (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving ( V g s = 4V)


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    PDF 2SK1266 180ns O-220 Tc-25-C bT32flS2 DD171bb 2SK126 2SK1266