MPF89
Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max
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IRFD213
IRFD220
IRFD221
IRFD222
IRFD223
IRFD9120
IRFD9121
IRFD9210
IRFD9213
IRFD91103
MPF89
MPF6659
2 watt fet
MPF910
IRFD9110
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Cross Reference power MOSFET
Abstract: T0-226AE Power MOSFET Cross Reference Guide
Text: Page What's An Enhancement-Mode, Silicon Gate, Power M OSFET?. “Lateral MOSFETs vs. Vertical Devices — the big difference" . What is TMOS? .
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O-220AB
T0-220
O-220
Cross Reference power MOSFET
T0-226AE
Power MOSFET Cross Reference Guide
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T0-92
Abstract: No abstract text available
Text: bfiF T> bSOHBQ m General Purpose Amplifiers and Switches continued Devices V CHHsmt) (Volts) Min NPN 30 MPSW01A PHP MPSW51A Min Max NATL SEMICON]) (DISCRETE) fT @ l e,- " », Hf e @ I c •c (mA) Max □ D 3 C1SSE 73T « N S C S mA (MHz) Min M Ì NF (ÍB)
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MPSW01A
NSDU01
PN2222
PN3566
PN3643
PN4141
TN2219
2N4125
BC213
BC214
T0-92
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BC309 equivalent
Abstract: st 393 8-pin T0-226AE
Text: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)
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T0-226AE
T0-92)
BDC01D
BC309 equivalent
st 393 8-pin
T0-226AE
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MMBTA06
Abstract: MPSW06
Text: MPSA06/MPSW06/MMBTA06 N AT L SEMI CONO DISCRETE 11E D | t S D 1 1 3 D _0 0 3 7 E t . a T-27-05 CTH National æ j Semiconductor M PSW 06 M PSA06 ¥ U E 0 UU Bc M M BTA06 ^ iß IIIHl 10-92 t TUG/10100-1 UH BC B | TO-236 S01' 23 T0-226AE TUG/10100-6 „L/G/10100-4
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SD113D
0D37Et
MPSW06
MMBTA06
TUG/10100-1
O-226AE
O-236
OT-23)
TUG/10100-6
TUG/10100-4
MMBTA06
MPSW06
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