Untitled
Abstract: No abstract text available
Text: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications
|
Original
|
PDF
|
FMM5017VF
29dBm
FMM5017VF
FCSI0598M200
|
FMM110VJ
Abstract: No abstract text available
Text: FMM110VJ GaAs MMIC FEATURES • Operation to 10 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available DESCRIPTION
|
Original
|
PDF
|
FMM110VJ
SMT-10
FMM110VJ
FCSI0598M200
|
FMM106HG
Abstract: No abstract text available
Text: FMM106HG GaAs MMIC FEATURES • • • • • • Operation to 6.5 GHz Divided by 8, OUT and OUT Outputs External 50 ohm Load Driving Capability -5V DC or +5V DC Single Power Supply Metal/Ceramic 14-pin Hermetic Flat Package Wide Operation Temperature -55°C to +85°C
|
Original
|
PDF
|
FMM106HG
14-pin
FMM106HG
FCSI0598M200
|
GaAs FET HEMT Chips
Abstract: 876 fujitsu fet general
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
|
Original
|
PDF
|
FLK207XV
FLK207XV
FCSI0598M200
GaAs FET HEMT Chips
876 fujitsu
fet general
|
FMM5027
Abstract: FMM5027VJ fujitsu power amplifier GHz mmic case styles case style 511 mmic 557
Text: FMM5027VJ MMIC Power Amplifier FEATURES • • • • • Wide Frequency Band: 0.8 to 3GHz Medium Power: P1dB=26dBm Typ. @f=0.8 - 3GHz High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz Wide Operating Temperature Range Hermetically Sealed Package DESCRIPTION
|
Original
|
PDF
|
FMM5027VJ
26dBm
FMM5027VJ
FCSI0598M200
FMM5027
fujitsu power amplifier GHz
mmic case styles
case style 511
mmic 557
|
FLL120
Abstract: No abstract text available
Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to
|
Original
|
PDF
|
FLL120MK
FLL120MK
FCSI0598M200
FLL120
|
Untitled
Abstract: No abstract text available
Text: FLM6472-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W
|
Original
|
PDF
|
FLM6472-8F
-46dBc
FLM6472-8F
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: hadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W
|
Original
|
PDF
|
FLM1414-3F
35dBm
-46dBc
FLM1414-3F
FCSI0598M200
|
FSX017X
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
|
Original
|
PDF
|
FSX017X
FSX017X
12GHz.
FCSI0598M200
|
FLK027WG
Abstract: No abstract text available
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
|
Original
|
PDF
|
FLK027WG
FLK027WG
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: hadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50W
|
Original
|
PDF
|
FLM1415-6F
-45dBc
FLM1415-6F
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
|
Original
|
PDF
|
FLU10XM
FLU10XM
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: hadd = 30% (Typ.) Low IM3 = -45dBc@Po = 30.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W
|
Original
|
PDF
|
FLM7185-12F
-45dBc
FLM7185-12F
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: hadd = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50W
|
Original
|
PDF
|
FLM1213-12F
-45dBc
28dBm
FLM1213-12F
FCSI0598M200
|
|
|
Untitled
Abstract: No abstract text available
Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W
|
Original
|
PDF
|
FLM7179-6F
-46dBc
FLM7179-6F
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM5964-4F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b =10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
PDF
|
FLM5964-4F
-46dBc
5964-4F
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @ f=18G Hz High Associated Gain: 8.5dB (Typ.)@ f=18G Hz Lg s 0.25|iim, W g = 200|iim Gold Gate M etallization for High Reliability Herm etically Sealed Package DESCRIPTION
|
OCR Scan
|
PDF
|
FHR02FH
FHR02FH
4-22G
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM5964-12F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 41 -506171 Typ. • High Gain: G ^ b = 10.0dB (Typ.) • High PAE: riadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
PDF
|
FLM5964-12F
-46dBc
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM1314-6F -FEATURES • • • • • • X, Ku-Band Internally Matched FET High Output Power: P ^ b = 37.5dBm Typ. High Gain: = 5.5dB (Typ.) High PAE: r!add = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz
|
OCR Scan
|
PDF
|
FLM1314-6F
FLM1314-6F
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM1414-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 6.0dB (Typ.) • High PAE: r iadd = 26% (Typ.) • Low IM3 = -46dBc@Po = 26.5dBm (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
PDF
|
FLM1414-6F
-46dBc
25llowing
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.0dB (Typ.) • High PAE: r!add = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
PDF
|
FLM1213-6F
-45dBc
25dBm
FLM1213-6F
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
PDF
|
FLM1213-12F
-45dBc
28dBm
FLM1213-12F
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @ f=18G Hz High Associated Gain: 9.0dB (Typ.)@ f=18G Hz Lg s 0.25|iim, W g = 200|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX02X is a High Electron M obility Transistor(HEM T)
|
OCR Scan
|
PDF
|
FHR02X
FHX02X
4-22G
FCSI0598M200
|
Untitled
Abstract: No abstract text available
Text: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general
|
OCR Scan
|
PDF
|
FLK057WG
FLK057WG
FCSI0598M200
|