FHR02X
Abstract: FHX02X GaAs FET HEMT Chips
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)
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FHR02X
18GHz
FHX02X
4-22GHz
FHR02X
GaAs FET HEMT Chips
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transistor 1345
Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)
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Original
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PDF
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FHR02X
18GHz
FHX02X
4-22GHz
FCSI0598M200
transistor 1345
FHR02X
GaAs FET HEMT Chips
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FHX02X
Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)
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Original
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PDF
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FHR02X
18GHz
FHX02X
4-22GHz
GaAs FET HEMT Chips
FHR02X
transistor hemt
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GaAs FET HEMT Chips
Abstract: No abstract text available
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)
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Original
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PDF
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FHR02X
18GHz
FHX02X
4-22GHz
FCSI0598M200
GaAs FET HEMT Chips
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high power FET transistor s-parameters
Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)
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Original
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PDF
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FHR02X
18GHz
FHX02X
4-22GHz
FCSI0598M200
high power FET transistor s-parameters
FHR02X
GaAs FET HEMT Chips
fujitsu hemt
GaAs FET chip
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Untitled
Abstract: No abstract text available
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @ f=18G Hz High Associated Gain: 9.0dB (Typ.)@ f=18G Hz Lg s 0.25|iim, W g = 200|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX02X is a High Electron M obility Transistor(HEM T)
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OCR Scan
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PDF
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FHR02X
FHX02X
4-22G
FCSI0598M200
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