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    F631 Search Results

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    Hirose Electric Co Ltd DF63-1618PCFA

    CONN PIN 16-18AWG CRIMP GOLD
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    DigiKey DF63-1618PCFA Cut Tape 8,089 1
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    DF63-1618PCFA Reel 4,000 4,000
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    Avnet Americas DF63-1618PCFA Reel 16 Weeks 4,000
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    Mouser Electronics DF63-1618PCFA
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    Newark DF63-1618PCFA Reel 4,000
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    Microchip Technology Inc PIC16F631-I-P

    IC MCU 8BIT 1.75KB FLASH 20DIP
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    DigiKey PIC16F631-I-P Tube 2,691 1
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    Microchip Technology Inc PIC18F6310-I-PT

    IC MCU 8BIT 8KB FLASH 64TQFP
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    DigiKey PIC18F6310-I-PT Tray 1,110 1
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    Microchip Technology Inc PIC16F631-I-SS

    IC MCU 8BIT 1.75KB FLASH 20SSOP
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    DigiKey PIC16F631-I-SS Tube 912 1
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    Microchip Technology Inc PIC16F631-I-SO

    IC MCU 8BIT 1.75KB FLASH 20SOIC
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    DigiKey PIC16F631-I-SO Tube 799 1
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    F631 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


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    PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    nec 2561 equivalent

    Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
    Text: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such


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    Untitled

    Abstract: No abstract text available
    Text: 123456789ABCA2DE7FC44A97  !"#"$7 81#%!4 •1BC7! 4A9-.97/049.23/62C74 )+6978,4$76C*4#A9-.97/041.239A414 ·1D73.24A9-.97/04AC9443!13341=844 $#


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    PDF 123456789ABCA2DE7FC4 AC944 46A942 67/9D46 62CA74 7D699726 9467D4@ 229A4 97242C4

    DB95

    Abstract: No abstract text available
    Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 A123456789AABCDCEFCAFBAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A A CA5E 3CD1AEA89 F !"#$%A89A&' 5 *A'BA1EEA !"ACCDCB A(+63&,6A(&+A A


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    PDF 123456789AABCDCEF 1234567891231324567189A15BC7DE9618BFD 93731A EDB41 12A31 189AAB 1D76F FD27A 1BE12 F66F3 DB95

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    f630

    Abstract: F631 hamming code-error detection correction 74F630 74F631 N74F630D N74F630N N74F631D N74F631N
    Text: FAST 74F630, F631 Error Detection Correction 16-Bit Parallel Error Detection and Correction 'F630 — 3-State ('F631 — Open-Collector) Preliminary Specification FAST Products FEA TURES • H ig h -im p e d a n c e NPN b a s e in p u t fo r re d u c e d lo a d in g (2 0 jiA in


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    PDF 600mW 16-bit 28-pin, 600-mil 74F630, 74F631 f630 F631 hamming code-error detection correction 74F630 74F631 N74F630D N74F630N N74F631D N74F631N

    Untitled

    Abstract: No abstract text available
    Text: FAST 74F630, F631 Signetics Error Detection Correction 16-Bit Parallel Error Detection and Correction 'F630 — 3-State ('F631 — Open-Collector) Preliminary Specification FAST Products FEATURES • High-impedance NPN base input for reduced loading (20/oA in


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    PDF 74F630, 74F631 16-Bit 20/oA 600mW 74F630 120mA 120mA 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: n iT m b e r C -16V Ï9 -E D IM EN SIO N S IN m . r w — 0 0 NOT SCA LE PRIN T 250 SEV/& FASTDNTRBfofl + 43 MAX. - f = Z Z ZI Z Z Z Z L ORDER N.R f63173-1 „ -2 •• -3 —<4 . -5 „ -6 . -7 -8 " ~3 1-163/73 -0 y/~ y; / / //~ t \ r r w :. // '/r 5 ECTfONJB-B


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    PDF f63173-1 CH63/73 Q-76Z779-E

    f630

    Abstract: 74F630 74F631 F631 N74F630N N74F631D N74F631N
    Text: FAST 74F630, F631 Sìgnetics Error Detection Correction 16-Bit Parallel Error Detection and Correction F 630 — 3-State ('F631 — Open-Collector) Preliminary Specification FAST Products FEATURES • High-impedance NPN base input for reduced loading (20/jA In


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    PDF 74F630, 74F631 16-Bit 20/jA 600mW 28-pin, 600-mil f630 74F630 74F631 F631 N74F630N N74F631D N74F631N

    8251a usart interface from z80

    Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
    Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn


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    PDF L4E75BS 80C42H D043fl23 8251a usart interface from z80 UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4

    BFU 450

    Abstract: BV EI 481 1300 J33CA BV EI 305 2800 5SMCJ28A 1.5SMCJ100CA 5SMCJ33A BHN 43 CY10 1.5SMCJ30CA
    Text: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR V O LTA G E -5 .0 -1 7 0 Volts Peak Pulse Power-1500 W atts FEATU RES • For surface m ounted applications in order to optim ize board space • Low profile package • Built-in strain relief • Glass passivated ju n ctio n


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    PDF Power-1500 SMC/DO-214AB DO-214AB 5SMCJ110CA 5SMCJ120C 5SMCJ120CA 5SMCJ130C 5SMCJ130CA 5SMCJ150C 5SMCJ150CA BFU 450 BV EI 481 1300 J33CA BV EI 305 2800 5SMCJ28A 1.5SMCJ100CA 5SMCJ33A BHN 43 CY10 1.5SMCJ30CA

    F483

    Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
    Text: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the


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    PDF 16k-bit 64k-bit IP-8001 F483 f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


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    PDF iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK

    Untitled

    Abstract: No abstract text available
    Text: This information is given as an indication. In the continual goal to improve our products, we reserve the right to make any modifications judged necessary irfcSii llJCl RADI ALL Microwave components 22GHz SMA OPTIONS : INDICATOR TECHNICAL DATA SHEET LATCHING


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    PDF 22GHz F63121

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R PRELIMINARY tm FDS6690S N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state


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    PDF FDS6690S

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


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    PDF b4E75S5 QQ3T701 nPD658xx bv0T 658X

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


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    PDF 65-MICRON xPD65800 D65806 9215K1

    J18M

    Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
    Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­


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    PDF

    Digital IC CMOS 16x1 mux

    Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
    Text: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A


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    PDF 00437T3 V30HL 16-bit NA80C42H NA8250 Digital IC CMOS 16x1 mux PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS l y i E I TI im m Xilinx has acquired the entire Philips CoolRurtner Low Power CPLD Product Family, For more technical or sales information^ please see; 8 £«& ^S l 8 ft « »0» X ft »« www.xillnx.com XCR3960 960 macrocell SRAM CPLD


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    PDF XCR3960 OT514-1

    transistor f422

    Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
    Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high


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    PDF xPD658xx transistor f422 transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    ru4f

    Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
    Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    PDF IEU-7922, IP-8090 ru4f F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425

    diode ru4d

    Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
    Text: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r


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    PDF aPD658xx diode ru4d ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1