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    F27D Search Results

    F27D Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SN74F27DR Texas Instruments Triple 3-input positive-NOR gates 14-SOIC 0 to 70 Visit Texas Instruments Buy
    SN74F27D Texas Instruments Triple 3-input positive-NOR gates 14-SOIC 0 to 70 Visit Texas Instruments Buy
    SN74F27DRE4 Texas Instruments Triple 3-input positive-NOR gates 14-SOIC 0 to 70 Visit Texas Instruments Buy
    RJU65F27DWT-00#X0 Renesas Electronics Corporation Fast Recovery Diodes Visit Renesas Electronics Corporation
    RJU65F27DWA-00#W0 Renesas Electronics Corporation High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency Visit Renesas Electronics Corporation
    RJU65F27DWS-00#W0 Renesas Electronics Corporation Fast Recovery Diodes Visit Renesas Electronics Corporation
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    F27D Price and Stock

    Rochester Electronics LLC SN74F27D

    IC GATE NOR 3CH 3-INP 14SOIC
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    DigiKey SN74F27D Bulk 70,542 594
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    Rochester Electronics LLC N74F27D,623

    IC GATE NOR 3CH 3-INP 14SO
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    DigiKey N74F27D,623 Bulk 22,500 2,420
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    Rochester Electronics LLC SN74F27DR

    IC GATE NOR 3CH 3-INP 14SOIC
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    DigiKey SN74F27DR Bulk 9,603 1,871
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    Texas Instruments SN74F27DR

    IC GATE NOR 3CH 3-INP 14SOIC
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    DigiKey SN74F27DR Cut Tape 2,093 1
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    Mouser Electronics SN74F27DR
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    Bristol Electronics SN74F27DR 2,220 11
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    SN74F27DR 1,560
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    Rochester Electronics SN74F27DR 9,603 1
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    Texas Instruments SN74F27D

    IC GATE NOR 3CH 3-INP 14SOIC
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    DigiKey SN74F27D Tube 1,753 1
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    Bristol Electronics SN74F27D 495
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    SN74F27D 3,073
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    Rochester Electronics SN74F27D 70,542 1
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    Find more F27D price and stock on Findchips.com

    F27D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction


    Original     		PDF EH50072 EH50073 EH50074 EH50075 EH50076 EH50077 EH50101 EH50102 EH50103 EH50104

    018pF

    Abstract: No abstract text available
    Text: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping,


    Original     		PDF EH541 DH541 DH542 DH543 DH544 DH545 DH546 018pF

    DH292

    Abstract: No abstract text available
    Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.


    Original     		PDF DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 M208b DH292

    RSF 800

    Abstract: F27D EH50151 DH50204 EH50204 DH50156 M208
    Text: SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction


    Original     		PDF EH50151 EH50152 EH50153 EH50154 EH50155 EH50156 EH50157 EH50201 EH50202 EH50203 RSF 800 F27D DH50204 EH50204 DH50156 M208

    STEP RECOVERY DIODES

    Abstract: EH542 EH546 Dh54 A22E M208
    Text: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping,


    Original     		PDF EH541 EH542 EH543 EH544 EH545 EH546 STEP RECOVERY DIODES EH546 Dh54 A22E M208

    DH294

    Abstract: DH200 DH270 DH256 Dh252 varactor multiplier dh110 DH292 DH293 M208B
    Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.


    Original     		PDF DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 M208b varactor multiplier

    chip varactor

    Abstract: EH76150 varactor KU BAND EH76033 EH76015
    Text: TUNING VARACTOR High Q silicon hyperabrupt junction tuning varactor HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from


    Original     		PDF Ct1V/Ct12V Ct1V/CT20V DH76010 DH76015 DH76022 DH76033 DH76047 DH76068 DH76100 DH76150 chip varactor EH76150 varactor KU BAND EH76033 EH76015

    bh32

    Abstract: bH-36 M208D BMH76 M208A BH158AM BH147
    Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / M ICRO STRIP A22e SMD3 BH15 BH28 SMD4 BH16 BH32 SMD6 BH36 BH35 SMD8 BH100 BH142a SOD323 BH101 BH142b SOT23 BH143 BH142c SOT143 BH146 BH147 BH142d POWER


    Original     		PDF BH142a BH142b BH142c BH142d BH142e BH142f BH165 BH165s BH167 BH167s bh32 bH-36 M208D BMH76 M208A BH158AM BH147

    BH204N

    Abstract: BH403a M208D BH198 BH202N M208A
    Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48


    Original     		PDF BH142a BH142b BH142c BH142d BH142e BH142f BH167 BH167s BH198 M208a BH204N BH403a M208D BH202N

    DH80050

    Abstract: DH80055-20 DH80050-40N DH80050-01 DH80055-20N DH80050-06N DH80080 DH80055 dh80082-06 DH80082-06N
    Text: Silicon Pin Diodes Switching Pin Diodes SWITCHING PIN DIODES Breakdown Voltage Vbr @ Ir = 10 A V Serie Resistance Rs @ F= 120 MHz Ω Capacitance @ F= 1 MHz Application pF Min. Typ. Max. @ Vr = 50V Package 1 Part Number Max. @ IF=200mA Min (µs) 500 High Power Switching


    Original     		PDF BH202N BMH76 BH301 BH141 BH158AM EH80050-00 EH80051-00 DH80050-01 DH80050-40N DH80050 DH80055-20 DH80055-20N DH80050-06N DH80080 DH80055 dh80082-06 DH80082-06N

    EH76150 die

    Abstract: DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312
    Text: SILICON MICROWAVE DIODES Step Recovery Diodes MICROWAVE SILICON MICROWAVE DIODES STEP RECOVERY DIODES All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N° 5010, the special requirements are included in the detail specification.


    Original     		PDF ESA/SCC5512/016 DH252 DH256 DH292 DH267 ESA/SCC5512/016 EH76150 die DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312

    Untitled

    Abstract: No abstract text available
    Text: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.


    Original     		PDF CTO/CT30 DH72820 DH72999 BH141 BH142

    dh728

    Abstract: DH71006 Tuning Varactors DH719 DH726 M208
    Text: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.


    Original     		PDF EH71004 EH71006 EH71008 EH71010 EH71012 EH71016 EH71020 EH71025 EH71030 EH71037 dh728 DH71006 Tuning Varactors DH719 DH726 M208

    dh200

    Abstract: DH294 Dh252 DH270 f60D
    Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.


    Original     		PDF DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 S268-W1 f60D

    STK 2028

    Abstract: HW 2596 STK 1262 stk 1264 FDCC 1602 stk 2265 F199 transistor TSX 07 31 1622 transistor f423 F487 transistor
    Text: Fri Jan 13 13:20:54 1995 Page 1 'W65C134 Internal ROM Monitor $F000 ' 'MON7.ASM - GENERAL LOOKUP TABLES' 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : IMON.ASM Output Filename : IMON.OBJ 1


    Original     		PDF W65C134 65C02 Hittel2818 STK 2028 HW 2596 STK 1262 stk 1264 FDCC 1602 stk 2265 F199 transistor TSX 07 31 1622 transistor f423 F487 transistor

    MVP-100

    Abstract: ROE EB STDX 8000 4614 inverter driver d947 DC-418 DSP56156 C-15 DSP56004 DSP56100
    Text: TABLE OF CONTENTS Paragraph Number Title Page Number SECTION 1 DSP56156 OVERVIEW 1.1 1.2 1.2.1 1.2.2 1.2.3 1.2.4 1.2.5 1.2.5.1 1.2.5.2 1.2.5.3 1.3 1.4 1.4.1 1.4.2 1.4.3 1.4.4 1.4.5 1.5 1.6 1.6.1 1.6.1.1 1.6.1.2 1.6.2 1.6.2.1 1.6.2.2 1.6.2.3 1.6.3 1.6.3.1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF DSP56156 DSP56100 MVP-100 ROE EB STDX 8000 4614 inverter driver d947 DC-418 C-15 DSP56004

    ge 6065 b

    Abstract: GE 6065 AH370 AH682 AH443 Thomson ah370 AH655 AH612 ah616 AH610
    Text: AH365.AH380/AH443.AH802 GaAs GUNN P O W E R G E N E R A T I O N D I O D E S FEATURES O perating fre q u e n c y range 8 to 100G H z Low noise c ha racte ristics from 8 to 100G H z C a s e s ty le fle x ib ility : W 2, W 3, W 4, W 5, F27d, F60 . Em itting p o w e r : 10 to 400 m W


    OCR Scan     		PDF AH365. AH380/AH443. AH802 ge 6065 b GE 6065 AH370 AH682 AH443 Thomson ah370 AH655 AH612 ah616 AH610

    diode cross reference

    Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
    Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE


    OCR Scan     		PDF MA40401 MA40402 MA40404 MA40405 MA40406 MA40408 diode cross reference schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606

    ci 740

    Abstract: 1C45 DH744
    Text: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO


    OCR Scan     		PDF

    74008

    Abstract: 74067 74004 74016 74220 c 74067 cI 74150 74470 ci 74390 74006
    Text: •'<% SILICON TUNING VARACTORS / This series o f high tuning ratio e pi-ju nctio n m icro w a ve tuning varactors 90 V incorporates a passivated mesa te ch n o lo g y. It is well suited for fre q u e n cy tuning a p p lica tio n s up to L b an d . CHIP AND


    OCR Scan     		PDF

    power 22E

    Abstract: No abstract text available
    Text: Typical applications of step recovery diodes include oscillators, power transmitter and drivers, for telecommunications, telemetry, radar and test equipment. In choosing an SRD, the significant characteristics include : O utput Frequency f0 ; Breakdown Voltage (VBR) ; Junction C apacitan ce (C j) ; Minority Carrier


    OCR Scan     		PDF DH546 power 22E

    Untitled

    Abstract: No abstract text available
    Text: SILICO N LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provi­ de passive receiver protection low noise amplifiers, mixers, and detectors ,


    OCR Scan     		PDF

    M208

    Abstract: No abstract text available
    Text: TEKELEC COMPONENTS bflE '10G37Ô7 000G232 3fl2 D PIN DIODES SILICON LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer, This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provide


    OCR Scan     		PDF 10G37 000G232 M208

    73016

    Abstract: No abstract text available
    Text: * SILICON TUNING VARACTORS This series of high tuning ratio epi-junction microwave tuning varactors 60 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to C band. CHIP AND CHIP DIODES PACKAGED DIODES (1)


    OCR Scan     		PDF ycj60 73016