Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    F15MHZ Search Results

    F15MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 10mhz 60w

    Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf

    UGF21030F

    Abstract: UGF21030 UGF21030P 300GP
    Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) 28VSpace 28VDC 350mA 2140Mhz 84MHz UGF21030F UGF21030 UGF21030P 300GP

    Untitled

    Abstract: No abstract text available
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original     		PDF UGF19125 1955MHz, 1965MHz f1-10MHz 10MHz) -43dBc 1300mA UGF19125

    PN channel MOSFET 10A

    Abstract: Cree Microwave UGF21125
    Text: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in


    Original     		PDF UGF21125 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21125 PN channel MOSFET 10A Cree Microwave

    Cree Microwave

    Abstract: UGF21060 UGF21060F UGF21060P
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P

    UGF21090

    Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
    Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers


    Original     		PDF UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100ain 28VDC, 2140MHz 84MHz UGF21090 UGF21090F UGF21090P 50 watts amplifier 10mhz

    UGF19125

    Abstract: UGF19125F UGF19125P
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original     		PDF UGF19125 1955MHz, 1965MHz f1-10MHz 10MHz) -43dBc 1300mA 28VDC, 1960MHz UGF19125 UGF19125F UGF19125P

    Cree Microwave

    Abstract: UGF21090 UGF21090F UGF21090P
    Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers


    Original     		PDF UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100uthorized UGF21090 Cree Microwave UGF21090F UGF21090P

    60W POWER AMPLIFIER

    Abstract: UGF16060F UGF16060P UPF16060 transistor 10mhz 60w
    Text: UPF16060 60W, 1.66 GHz, 26V Broadband RF Field Effect Transistor Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 1626 to 1660 MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA,


    Original     		PDF UPF16060 16QAM, 400kHz) 600kHz) 540mA 1660MHz UPF16060 60W POWER AMPLIFIER UGF16060F UGF16060P transistor 10mhz 60w

    UGF21030F

    Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701
    Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21030 UGF21030F Cree Microwave MRF21030 UGF21030P 21701

    50 watts amplifier 10mhz

    Abstract: 10mhz mosfet Cree Microwave UGF19125 UGF19125F UGF19125P
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original     		PDF UGF19125 MRF19125/MRF19125S. UGF19125 50 watts amplifier 10mhz 10mhz mosfet Cree Microwave UGF19125F UGF19125P

    UGF21045F

    Abstract: No abstract text available
    Text: UGF21045 45W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. It’s ideally suitable for CDMA, W-CDMA, GSM,TDMA and Multi-Carrier power amplifiers in


    Original     		PDF UGF21045 MRF21045/MRF21045S. UGF21045 UGF21045F