UGF21090 Search Results

UGF21090 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UGF21090		Cree	90W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET		Original	PDF
UGF21090		Cree	LDMOS FETs in Class AB Operation 2.1 GHz Cellular		Original	PDF
UGF21090F		Cree	FET Transistor, 90W, 2.17GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF
UGF21090P		Cree	FET Transistor, 90W, 2.17GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UGF21090 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ultrarf Abstract: MRF21090 UGF21090 Text: UGF21090 90W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.11 to 2.17 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF21090 MRF21090 ultrarf MRF21090 UGF21090
UGF21090 Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers	Original	PDF	UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100ain 28VDC, 2140MHz 84MHz UGF21090 UGF21090F UGF21090P 50 watts amplifier 10mhz
Cree Microwave Abstract: UGF21090 UGF21090F UGF21090P Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers	Original	PDF	UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100uthorized UGF21090 Cree Microwave UGF21090F UGF21090P
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	PDF	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b