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Catalog Datasheet	MFG & Type	PDF	Document Tags
UGF21045F Abstract: No abstract text available Text: UGF21045 45W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. It’s ideally suitable for CDMA, W-CDMA, GSM,TDMA and Multi-Carrier power amplifiers in	Original	PDF	UGF21045 MRF21045/MRF21045S. UGF21045 UGF21045F

Catalog Datasheet

MFG & Type

PDF

Document Tags

UGF21045F

Abstract: No abstract text available
Text: UGF21045 45W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. It’s ideally suitable for CDMA, W-CDMA, GSM,TDMA and Multi-Carrier power amplifiers in

Original

PDF

UGF21045 MRF21045/MRF21045S. UGF21045 UGF21045F