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    UGF21090P Search Results

    UGF21090P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UGF21090P Cree FET Transistor, 90W, 2.17GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

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    UGF21090

    Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
    Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers


    Original     		PDF UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100ain 28VDC, 2140MHz 84MHz UGF21090 UGF21090F UGF21090P 50 watts amplifier 10mhz

    Cree Microwave

    Abstract: UGF21090 UGF21090F UGF21090P
    Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers


    Original     		PDF UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100uthorized UGF21090 Cree Microwave UGF21090F UGF21090P