EPA160A
Abstract: 9018 transistor EPA160A-100P 100MIL
Text: EPA160A-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA160A-100P
100MIL
12GHz
18GHz
EPA160A
9018 transistor
EPA160A-100P
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EPA160A
Abstract: No abstract text available
Text: EPA160A High Efficiency Heterojunction Power FET UPDATED 05/12/2006 FEATURES • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA160A
18GHz
12GHz
EPA160A
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EPA160AV
Abstract: EPA160A
Text: EPA160A/EPA160AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA160A/EPA160AV
EPA160A
EPA160AV
18GHz
EPA160AV)
EPA160A
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EPA160A
Abstract: No abstract text available
Text: Excelics EPA160A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA160A
18GHz
12GHz
EPA160A
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EPA160AV
Abstract: EPA160A
Text: Excelics EPA160A/EPA160AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA160A/EPA160AV
EPA160A
EPA160AV
18GHz
EPA160A
12GHz
EPA160AV.
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EPA060A
Abstract: EPA060AV EPA160AV
Text: EPA060A/EPA060AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA060A/EPA060AV
EPA060A
EPA060AV
18GHz
EPA160AV)
EPA060A
EPA160AV
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EFA018A
00E-12
40E-14
00E-08
63E-13
80E-14
00E-14
EFA025A
Curtice
EFA018A
EPA030A
EPA480C
EPA060B
EFA040A
EFA025A
EPA025
220E-12
Excelics EPA018A
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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EPA018A
EPA025A
EPA030C
EPA040A
EPA060A
EFA480B
EFA480C
EFA720A
EFA960B
EFA1200A
EPA018A
EPA060B
EFA018A
Excelics EPA018A
EPA480C
EPA025A
EPA040A
EPA060A
EPA240D
EPA030C
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EMA302B
Abstract: EPA080A EPA160A
Text: Excelics EMA302B PRELIMINARY DATA SHEET 22-26 GHz Medium Power MMIC 85 165 50 165 Operating Frequency Range 1020 F PARAMETERS/TEST CONDITIONS 325 425 50 95 900 Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS1 Ta = 25 OC
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EMA302B
EMA302B
EPA080A
EPA160A
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