BCR108T
Abstract: BFR181T SC75
Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR181T
BCR108T
BFR181T
SC75
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87757
Abstract: BFR181 BCW66
Text: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR181
87757
BFR181
BCW66
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BFR34* transistor
Abstract: transistor k 4213 BFR340F C5 MARKING TRANSISTOR
Text: BFR340F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation Transistor frequency of 14 GHz High insertion gain 2 3 Ideal for low current amplifiers and oscillators 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340F
Aug-23-2001
-j100
BFR34* transistor
transistor k 4213
BFR340F
C5 MARKING TRANSISTOR
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BFR949T
Abstract: SC75 BFR94
Text: BFR949T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR949T
VPS05996
Aug-09-2001
BFR949T
SC75
BFR94
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1 R 4254
Abstract: BFR182 BCW66 infineon marking code L2
Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFR182
1 R 4254
BFR182
BCW66
infineon marking code L2
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BFR181T
Abstract: SC75
Text: BFR181T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR181T
VPS05996
900MHz
Aug-09-2001
BFR181T
SC75
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78145
Abstract: BFR92T SC75 BFT92T
Text: BFR92T NPN Silicon RF Transistor Preliminary data 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92T
BFT92T
VPS05996
900MHz
Aug-08-2001
78145
BFR92T
SC75
BFT92T
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BFR182T
Abstract: SC75
Text: BFR182T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR182T
VPS05996
900MHz
Aug-09-2001
BFR182T
SC75
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Untitled
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking
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BFR949T
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Untitled
Abstract: No abstract text available
Text: BFR340F NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR340F
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Untitled
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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BFR380T
VPS05996
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Untitled
Abstract: No abstract text available
Text: BFR182T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR182T
VPS05996
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Untitled
Abstract: No abstract text available
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR949F
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Untitled
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
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E 94733
Abstract: BFT92T
Text: BFR92T NPN Silicon RF Transistor Preliminary data 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92T
BFT92T
VPS05996
E 94733
BFT92T
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Untitled
Abstract: No abstract text available
Text: BFR193T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR193T
VPS05996
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bfr949
Abstract: BFR949F
Text: BFR949F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA 1 • fT = 9 GHz, F = 1 dB at 1 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR949F
50mponents
bfr949
BFR949F
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ua 722 fc
Abstract: BCR847BF MARKING rks BFR94
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR949F
ua 722 fc
BCR847BF
MARKING rks
BFR94
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Untitled
Abstract: No abstract text available
Text: BFR340F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340F
Jan-17-2002
-j100
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TRANSISTOR MARKING NK
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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BFR380T
VPS05996
EHA07524
Feb-18-2003
TRANSISTOR MARKING NK
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transistor 1107
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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BFR380T
VPS05996
EHA07524
Jan-29-2002
transistor 1107
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BFR360T
Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
VPS05996
BFR360T
BCR108T
E6327
SC75
TRANSISTOR MARKING NK
infineon marking code L2
fbs MARKING TRANSISTOR
transistor marking code 325
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IC 7437
Abstract: BFR360F
Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
te20mA
Jun-22-2001
-j100
IC 7437
BFR360F
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TRANSISTOR MARKING NK
Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR949T
TRANSISTOR MARKING NK
BCR108T
BFR949T
SC75
SC79
SCD80
BFR94
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